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onsemi MSB709-RT1G
- Part No.:
- MSB709-RT1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MSB709-RT1G.pdf
- Description:
- TRANS PNP 45V 0.1A SC-59
- Quantity:
- Payment:
- Shipping:
Inventory:4,406
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Product details
Overview
MSB709-RT1G from onsemi is a PNP general-purpose amplifier transistor in SC-59 (SOT-23) surface-mount package, rated for V(BR)CEO = −45 V, IC = −100 mA continuous, hFE = 210–340 at IC = 2.0 mA, VCE(sat) ≤ −0.5 V at IC = 100 mA/IB = 10 mA, and PD = 200 mW - used in low-power signal amplification and switching circuits in consumer and industrial control modules.
For engineers reviewing the MSB709-RT1G datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, SC-59 footprint compatibility, guaranteed hFE range, VCE(sat) performance under specified drive conditions, and Pb-free compliance per J-STD-609.
Technical Context
This device operates as a silicon PNP bipolar junction transistor optimized for linear amplification and saturated switching in low-voltage, low-current analog and digital interface stages. Its breakdown ratings (V(BR)CBO = −60 V, V(BR)EBO = −7.0 V) and leakage limits (ICBO ≤ −0.1 µA, ICEO ≤ −100 nA) support stable operation in bias-sensitive circuits.
The hFE specification is tested at VCE = 10 V and IC = 2.0 mA, with pulse test conditions (≤300 µs, DC ≤ 2%) ensuring consistent gain characterization. Thermal design must respect TJ(max) = 150°C and derate power above TA = 25°C using the specified thermal resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)CEO | −45 Vdc - maximum reverse voltage between collector and emitter before breakdown; defines safe operating voltage in common-emitter configurations |
| IC (cont.) | −100 mAdc - continuous collector current limit; sets max load-handling capability in DC-coupled amplifiers or switches |
| hFE | 210–340 - DC current gain at VCE = 10 V, IC = 2.0 mA; determines base drive requirement for target collector current |
| VCE(sat) | ≤ −0.5 Vdc at IC = −100 mA, IB = −10 mA - saturation voltage drop; impacts power loss and logic-level compatibility in switching applications |
| PD | 200 mW - total power dissipation at TA = 25°C; constrains usable current/voltage combinations without heatsinking |
| TJ(max) | 150°C - maximum junction temperature; requires thermal design margin when ambient exceeds 25°C or power approaches rating |
Pinout & Package
MSB709-RT1G uses the SC-59 (SOT-23) plastic surface-mount package (Case 318D), measuring 2.90 × 1.50 × 1.15 mm with 1.90 mm lead pitch. Pin configuration follows Style 1: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control electrode | Accepts forward-biased current to enable conduction; requires current-limiting resistor in most driver circuits |
| 2 (Emitter) | Current source terminal (PNP) | Connected to higher potential rail in common-emitter switch; provides return path for amplified output current |
| 3 (Collector) | Output terminal | Delivers inverted, amplified current to load; polarity reversal relative to NPN devices affects bias network design |
Key Features
| Feature | Design Value |
|---|---|
| Pb-free packaging | Complies with J-STD-609 Class 3 moisture sensitivity and RoHS Directive 2011/65/EU; supports lead-free reflow assembly |
| Guaranteed hFE range | 210–340 at VCE = 10 V, IC = 2.0 mA - enables predictable base drive sizing across production lots |
| Low VCE(sat) | ≤ −0.5 V at IC = −100 mA/IB = −10 mA - minimizes conduction loss in battery-powered or thermally constrained designs |
| High V(BR)CBO | −60 V - allows use in circuits with transient overvoltage up to 60 V without breakdown risk |
Applications
| Audio Pre-amplifier Stage | LED Driver Switch |
|---|---|
Use Scenario: Low-noise small-signal amplification of microphone or sensor outputs in portable audio systems. IC Role / Device Role / Timing Role: PNP amplifier configured in common-emitter topology to provide voltage gain with phase inversion. Use Value: hFE ≥ 210 ensures sufficient gain with minimal base current draw, extending battery life in always-on sensing nodes. | Use Scenario: Driving indicator or status LEDs from microcontroller GPIO pins with active-low logic compatibility. IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from VCC through LED to MCU output pin. Use Value: VCE(sat) ≤ −0.5 V guarantees <0.5 V drop across transistor, maximizing forward voltage available to LED for consistent brightness. |
| Level Translation Interface | Relay Driver Circuit |
Use Scenario: Translating 3.3 V logic signals to 5 V or 12 V domains in mixed-voltage embedded systems. IC Role / Device Role / Timing Role: Inverting level shifter using emitter-follower or common-emitter configuration with pull-up resistors. Use Value: V(BR)CEO = −45 V supports reliable operation with 12 V rail supplies and transient immunity during hot-plug events. | Use Scenario: Controlling electromechanical relays in industrial I/O modules where microcontrollers lack sufficient drive strength. IC Role / Device Role / Timing Role: High-side switch enabling relay coil current flow from positive supply when base is pulled low. Use Value: IC(P) = −200 mA peak rating accommodates relay inrush current without secondary protection components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP general-purpose amplifier transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT709LT1G | Same die, identical electrical specs, SC-70 (SOT-323) package - 2.2 × 1.35 × 0.95 mm, smaller footprint | Requires PCB layout revision due to different pad geometry and thermal mass; lower power dissipation margin (150 mW) | Select when board space is critical and thermal load permits reduced PD rating |
| BC807-25-7-F | hFE = 220–475 at same test condition; V(BR)CEO = −45 V; PD = 310 mW; SC-70 package | Higher gain spread and greater power handling, but not Pb-free by default (RoHS version requires suffix -7-F) | Choose for higher gain consistency or elevated power needs, verifying Pb-free compliance on order code |
Compared with MMBT709LT1G, MSB709-RT1G offers +50 mW power margin and larger SC-59 thermal pad area; versus BC807-25-7-F, it provides tighter hFE binning and guaranteed Pb-free marking, simplifying compliance documentation.
Availability
MSB709-RT1G is available at Aetrix Electronics and suitable for low-power signal amplification, discrete switching, and level translation applications requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.
Supply support for MSB709-RT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering high-performance silicon solutions for automotive, industrial, cloud, and IoT markets.
The MSB709-RT1G belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, high-reliability discrete amplification and switching in consumer, computing, and industrial control systems.
FAQ
What is the pin configuration of the MSB709-RT1G?
The MSB709-RT1G uses Style 1 pinout in the SC-59 (SOT-23) package: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This configuration is confirmed in the official onsemi datasheet (Rev. 6, June 2005) and matches the mechanical case outline diagram labeled "STYLE 1".
Is the MSB709-RT1G RoHS compliant and lead-free?
Yes, the MSB709-RT1G is Pb-free and RoHS compliant. The "G" suffix denotes lead-free packaging per J-STD-609, and the datasheet explicitly states "Pb−Free Package is Available" under Features. It meets EU Directive 2011/65/EU requirements without exemptions.
What is the maximum collector current rating for continuous operation of the MSB709-RT1G?
The MSB709-RT1G has a maximum continuous collector current rating of −100 mAdc at TA = 25°C, as specified in the "MAXIMUM RATINGS" table. Derating is required above 25°C ambient, following the thermal characteristics curve in the datasheet.
Does the MSB709-RT1G have a guaranteed minimum hFE value?
Yes, the MSB709-RT1G guarantees hFE ≥ 210 at VCE = 10 Vdc and IC = 2.0 mAdc, per the "ELECTRICAL CHARACTERISTICS" table. This minimum is tested under pulse conditions (≤300 µs, DC ≤ 2%) to ensure repeatability across production lots.
Can the MSB709-RT1G be used as a direct replacement for the MMBT709LT1G?
No - while electrically identical, the MSB709-RT1G (SC-59) and MMBT709LT1G (SC-70) differ in package size, thermal resistance, and pad layout. They are not pin-compatible or drop-in replacements; PCB redesign is required to accommodate the larger SC-59 footprint and different solder profile.
MSB709-RT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 45 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 210 @ 2mA, 10V
- Power - Max:
- 200 mW
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-59
MSB709-RT1G FAQ
1.How can I place an order for MSB709-RT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for MSB709-RT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSB709-RT1G reliable?
The price and inventory of MSB709-RT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSB709-RT1G is usually 5 days.
3.What payment methods are accepted for MSB709-RT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSB709-RT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSB709-RT1G?
MSB709-RT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSB709-RT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSB709-RT1G?
For technical support, including MSB709-RT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSB709-RT1G requirements.
6.How does Aetrix verify that MSB709-RT1G is sourced from the original manufacturer or authorized distributors?
All MSB709-RT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSB709-RT1G meets industry standards.
7.What is the process for return or replacement of MSB709-RT1G?
All MSB709-RT1G units undergo pre-shipment inspection (PSI). If there is an issue with MSB709-RT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSB709-RT1G part is unused and in its original packaging.
Return procedure for MSB709-RT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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