onsemi MSB710-RT1

Overview

MSB710-RT1 from onsemi is a PNP general-purpose amplifier transistor in SC-59 (SOT-23) surface-mount package, rated for −50 V V(BR)CEO, −500 mA IC continuous, and 200 mW PD at TA = 25°C; used in low-power signal amplification and switching circuits in consumer power management and portable audio bias stages.

For engineers reviewing the MSB710-RT1 datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SC-59 mechanical compatibility, hFE range of 120–240 at IC = −150 mA, VCE(sat) ≤ −0.6 V, and Pb-free marking compliance per onsemi Rev. 4 documentation.

Technical Context

This device operates as a silicon PNP bipolar junction transistor with fixed emitter-base and collector-base junction breakdown limits, supporting linear amplification and saturated switching modes. Its thermal design accommodates TJ up to 150°C and Tstg from −55°C to +150°C, enabling use in ambient-constrained PCB layouts.

The SC-59 package defines a 3-pin SMT outline with 1.90 mm lead pitch and 2.90 × 1.50 × 1.15 mm body dimensions. Pin configuration follows Style 1: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector - confirmed by onsemi CASE 318D mechanical drawing and marking diagram.

Key Specifications

Pinout & Package

MSB710-RT1 uses the SC-59 (Case 318D) surface-mount package: 2.90 mm × 1.50 mm × 1.15 mm body, 1.90 mm lead pitch, three terminals in a single-row configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier transistor applications.

Compared with MMBTA92 and PN2907A, the MSB710-RT1 offers tighter hFE distribution (120–240), optimized SC-59 footprint for high-density SMT layouts, and −50 V/−500 mA balance ideal for mid-range portable electronics requiring reliable PNP switching without over-spec'ing voltage or thermal headroom.

Availability

MSB710-RT1 is available at Aetrix Electronics and suitable for portable audio biasing, low-voltage power switching, and industrial sensor signal conditioning requiring stable component supply and RoHS-compliant sourcing.

Supply support for MSB710-RT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, and consumer markets.

The MSB710-RT1 belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, space-constrained applications requiring reliable PNP amplification and switching in surface-mount form factors.

FAQ

What is the maximum collector-emitter voltage rating for MSB710-RT1?

The MSB710-RT1 has a guaranteed minimum V(BR)CEO rating of −50 Vdc at IC = −10 mAdc and TA = 25°C, as specified in the onsemi Rev. 4 datasheet. This rating defines the absolute maximum reverse-biased voltage the transistor can withstand between collector and emitter before breakdown occurs. Exceeding this value risks permanent device failure, and derating is recommended for long-term reliability in production designs using MSB710-RT1.

Is MSB710-RT1 compatible with lead-free reflow soldering processes?

Yes, MSB710-RT1 is Pb-free and qualified for standard lead-free reflow profiles, including JEDEC J-STD-020 moisture sensitivity level (MSL) 1 handling. The "M" or "G" marking on the device confirms Pb-free compliance per onsemi documentation. Its SC-59 package supports peak reflow temperatures up to 260°C, and the device meets IPC/JEDEC standards for thermal cycling robustness when processed with MSB710-RT1-specific profile settings.

What is the pin configuration of MSB710-RT1?

The MSB710-RT1 uses Style 1 pinout per onsemi CASE 318D mechanical drawing: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This configuration is explicitly shown in the marking diagram and confirmed in the "MECHANICAL CASE OUTLINE" section of the datasheet. Misalignment with alternate styles (e.g., Style 2 or 4) will result in functional failure, so PCB footprints must strictly follow the SC-59 Style 1 layout for correct MSB710-RT1 operation.

Does MSB710-RT1 have a specified junction-to-ambient thermal resistance?

No, the onsemi MSB710-RT1 datasheet does not list a published RθJA value. Thermal performance must be determined empirically based on PCB copper area, layer stack-up, and airflow. However, the device specifies a maximum junction temperature (TJ) of 150°C and 200 mW power dissipation at TA = 25°C, allowing designers to estimate safe operating area using measured board-level thermal impedance. For critical thermal designs, characterization with MSB710-RT1 under actual layout conditions is required.

What is the typical DC current gain (hFE) of MSB710-RT1 at low collector current?

The MSB710-RT1 datasheet specifies hFE1 = 120–240 at VCE = −10 Vdc and IC = −150 mAdc, but does not provide a separate hFE value at low-current bias (e.g., <1 mA). Designers should use the −150 mA test condition as the primary gain reference for MSB710-RT1, since gain drops significantly below that level and varies widely across units. For low-current amplification, alternative transistors with published hFE at µA-level IC should be considered instead of relying on extrapolated MSB710-RT1 behavior.