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onsemi MSB710-RT1G

Part No.:
MSB710-RT1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixMSB710-RT1G.pdf
Description:
TRANS PNP 50V 0.5A SC-59
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,311

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Product details

Overview

MSB710-RT1G from onsemi is a PNP general-purpose amplifier transistor in SC-59 (SOT-23) surface-mount package, rated for −50 V V(BR)CEO, −500 mA IC, and 200 mW power dissipation; used in low-voltage switching and linear amplification stages of portable audio preamps and LED driver bias networks.

For engineers reviewing the MSB710-RT1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed hFE ≥120 at −150 mA, VCE(sat) ≤ −0.6 V, Pb-free SC-59 footprint compatibility, and −55°C to +150°C operating range.

Technical Context

This discrete PNP bipolar junction transistor operates in active, saturation, and cutoff regions with fixed emitter-base and collector-base junction structures. Its DC current gain spans 120–240 at −150 mA and drops to 40 at −500 mA, indicating gain compression under high-current drive.

Thermal design must account for 200 mW maximum power dissipation at TA = 25°C and derating above that ambient; junction temperature is limited to 150°C, with storage range extending from −55°C to +150°C.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)CEO−50 Vdc: Maximum reverse voltage between collector and emitter before breakdown; defines safe operating voltage ceiling in PNP switch configurations.
IC Continuous−500 mAdc: Max continuous collector current; sets upper limit for sustained load switching or analog amplification without thermal runaway.
PD200 mW: Total package power dissipation at 25°C ambient; requires PCB copper area or airflow if operating near full rating.
hFE @ −150 mA120–240: DC current gain range at moderate bias; enables predictable base drive calculation for low-power amplification stages.
VCE(sat)≤ −0.6 Vdc @ −300 mA/−30 mA: Saturation voltage confirms low-loss switching performance in digital logic interface or relay driver circuits.
Cob≤ 15 pF @ −10 V: Output capacitance limits high-frequency response; suitable for audio-band and sub-MHz signal conditioning.

Pinout & Package

MSB710-RT1G uses the SC-59 (SOT-23) plastic surface-mount package (Case 318D), measuring 2.90 × 1.50 × 1.15 mm with 1.90 mm lead pitch. Pin configuration follows Style 1: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Current-controlled input terminalAccepts forward-biased base-emitter current to modulate collector current; requires series resistor to limit IB per hFE target.
2 (Emitter)Common reference node for PNP operationConnected to higher potential rail in typical common-emitter switch; polarity reversal critical vs NPN layout.
3 (Collector)Output current terminalSinks current from load to emitter; voltage swing limited by V(BR)CEO and VCE(sat).

Key Features

FeatureDesign Value
Pb-free SC-59 packageComplies with RoHS Directive 2011/65/EU; eliminates lead contamination risk in reflow soldering and end-of-life recycling.
Guaranteed hFE ≥120Enables stable biasing in Class-A amplifiers without gain-dependent thermal drift compensation.
V(BR)EBO = −7.0 VPermits safe base-emitter reverse bias up to −7 V, supporting level-shifting or protection diode integration.
TJ max = 150°CSupports operation in sealed enclosures or high-ambient industrial environments without forced cooling.

Applications

Audio Pre-amplifier StageLED Constant-Current Bias

Use Scenario: Low-noise small-signal amplification in battery-powered headphone drivers and microphone preamps.

IC Role / Device Role / Timing Role: PNP amplifier transistor configured in common-emitter topology with emitter degeneration for linearity.

Use Value: hFE ≥120 ensures sufficient gain margin at −150 mA bias; VCE(sat) ≤ −0.6 V minimizes quiescent power loss in Class-A operation.

Use Scenario: Precision current-source control for indicator LEDs in automotive dashboard clusters.

IC Role / Device Role / Timing Role: PNP current mirror master or series-pass element regulating LED string current.

Use Value: V(BR)CEO = −50 V accommodates 12 V automotive supply transients; −500 mA IC supports multi-LED parallel arrays.

Low-Voltage Logic InterfaceRelay Driver Circuit

Use Scenario: Level translation between 3.3 V microcontroller GPIO and 5 V peripheral enable lines.

IC Role / Device Role / Timing Role: Saturated PNP switch turning on pull-up loads referenced to higher rail.

Use Value: VBE(sat) ≤ −1.5 V ensures reliable turn-on with standard CMOS output swing; SC-59 footprint saves board space.

Use Scenario: Driving electromagnetic relay coils in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch controlling coil current path to ground via emitter-follower or common-emitter configuration.

Use Value: −500 mA IC and 200 mW PD support 12 V/400 mA relays; Tstg = −55°C to +150°C ensures field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT710-7-FSame SC-59 package, identical V(BR)CEO/IC/hFE specs; Diodes Incorporated part with ±5% hFE binning tolerance vs onsemi's min/max range.Identical use in linear amplification and switching; validated in same PCB footprints.Select when requiring tighter hFE consistency across production lots.
PN2907ATO-92 through-hole package; same V(BR)CEO and IC, but lower PD (350 mW) and wider hFE spread (100–300).Used where manual assembly or prototyping favors axial leads; not drop-in for SC-59 layouts.Choose only for breadboard evaluation or legacy through-hole designs.

Compared with MMBT710-7-F and PN2907A, the MSB710-RT1G offers guaranteed minimum hFE and Pb-free SC-59 compliance out-of-box, making it optimal for automated SMT production targeting consumer audio and automotive lighting subsystems.

Availability

MSB710-RT1G is available at Aetrix Electronics and suitable for portable audio preamplifiers, LED bias networks, low-voltage logic interfaces, and relay driver circuits requiring stable component supply and RoHS-compliant manufacturing.

Supply support for MSB710-RT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MSB710-RT1G belongs to onsemi's general-purpose bipolar transistor product line, designed for cost-sensitive, high-volume applications demanding reliable PNP switching and amplification in compact surface-mount formats.

FAQ

What is the pin configuration of the MSB710-RT1G?

The MSB710-RT1G uses Style 1 pinout in the SC-59 package: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This matches JEDEC TO-236AB and is confirmed in the official onsemi datasheet revision 4. Layout must observe PNP polarity - emitter connects to higher potential than collector in normal operation. The MSB710-RT1G marking "CR M" identifies device code and Pb-free status.

Does the MSB710-RT1G support Pb-free reflow soldering?

Yes, the MSB710-RT1G is explicitly designated as Pb-free per its "G" suffix and "M" marking, compliant with J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU. It withstands peak reflow temperatures up to 260°C for 10 seconds. The MSB710-RT1G datasheet specifies no special pre-bake requirements due to its MSL-1 rating.

What is the minimum hFE guaranteed for MSB710-RT1G at −150 mA?

The MSB710-RT1G guarantees hFE ≥120 when tested at VCE = −10 Vdc and IC = −150 mAdc, per the Electrical Characteristics table in the January 2006 Rev. 4 datasheet. At higher current (−500 mA), minimum hFE drops to 40. This defined gain floor allows robust base resistor design for the MSB710-RT1G in production amplifiers.

Can MSB710-RT1G replace PN2907A in existing designs?

No direct replacement: MSB710-RT1G is SC-59 surface-mount while PN2907A is TO-92 through-hole - different footprints and thermal profiles. Though both are PNP transistors with matching V(BR)CEO (−50 V) and IC (−500 mA), the MSB710-RT1G has lower PD (200 mW vs 350 mW) and tighter hFE range. Redesign required for MSB710-RT1G integration.

What is the maximum operating temperature for MSB710-RT1G?

The MSB710-RT1G has a maximum junction temperature (TJ) of 150°C and storage temperature range of −55°C to +150°C. Derating begins above 25°C ambient at 1.6 mW/°C, based on its 200 mW PD rating. This makes the MSB710-RT1G suitable for under-hood automotive modules or enclosed industrial controls where ambient exceeds 85°C.

MSB710-RT1G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 30mA, 300mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 150mA, 10V
Power - Max:
200 mW
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59

MSB710-RT1G FAQ

1.How can I place an order for MSB710-RT1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MSB710-RT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSB710-RT1G reliable?

The price and inventory of MSB710-RT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSB710-RT1G is usually 5 days.

3.What payment methods are accepted for MSB710-RT1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSB710-RT1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSB710-RT1G?

MSB710-RT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSB710-RT1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSB710-RT1G?

For technical support, including MSB710-RT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSB710-RT1G requirements.

6.How does Aetrix verify that MSB710-RT1G is sourced from the original manufacturer or authorized distributors?

All MSB710-RT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSB710-RT1G meets industry standards.

7.What is the process for return or replacement of MSB710-RT1G?

All MSB710-RT1G units undergo pre-shipment inspection (PSI). If there is an issue with MSB710-RT1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSB710-RT1G part is unused and in its original packaging.

Return procedure for MSB710-RT1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MSB710-RT1G Tags

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