onsemi MSB92AWT1

Overview

MSB92AWT1 from onsemi is a PNP silicon general-purpose high-voltage transistor in SC-70/SOT-323 package, rated for −300 V collector-emitter and collector-base breakdown voltage, 500 mA continuous collector current, and 150 mW power dissipation; used in high-voltage amplifier stages of industrial power supplies and relay drivers.

For engineers reviewing the MSB92AWT1 datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage PNP switching capability, SOT-323 footprint compatibility, DC current gain variation across temperature, ESD robustness (MM 2000 V), and thermal derating above 25°C ambient.

Technical Context

This device operates as a high-voltage PNP bipolar junction transistor optimized for linear amplification and switching in low-power surface-mount circuits. Its −300 V V(BR)CEO and −300 V V(BR)CBO ratings enable use in off-line auxiliary supplies and flyback snubber networks where high reverse blocking is required.

The SC-70 package imposes thermal limits (150 mW PD at TA = 25°C, TJ max = 150°C), and its hFE ranges from 25 to 200 depending on IC (1–30 mA) and temperature (−55°C to +125°C), requiring bias design validation across operating conditions.

Key Specifications

Pinout & Package

MSB92AWT1 is housed in the SC-70 (SOT-323) package - a 3-pin, low-profile surface-mount outline with 1.2 mm pitch, designed for space-constrained PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with ZTX951 and BC807-40W, MSB92AWT1 uniquely balances −300 V blocking, SOT-323 form factor, and 150 mW thermal rating-making it the only viable option for space-constrained, high-voltage auxiliary switching without through-hole compromise or voltage derating.

Availability

MSB92AWT1 is available at Aetrix Electronics and suitable for industrial power supply auxiliary circuits, high-voltage relay drivers, and snubber network switches requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for MSB92AWT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MSB92AWT1 belongs to onsemi's general-purpose high-voltage bipolar transistor product line, engineered specifically for compact, reliable switching and amplification in off-line power systems where voltage robustness and SMT compatibility are critical.

FAQ

What is the maximum collector-emitter voltage rating for MSB92AWT1?

The MSB92AWT1 has a guaranteed minimum collector-emitter breakdown voltage V(BR)CEO of −300 V at IC = −1.0 mA and IB = 0. This rating is validated per JEDEC test conditions and defines the absolute maximum reverse bias the device can withstand before avalanche conduction begins. Designers must apply appropriate safety margins-typically ≥20%-in actual circuits due to voltage transients and temperature effects.

Does MSB92AWT1 have Pb-free packaging options?

Yes, MSB92AWT1 is offered in both standard and Pb-free variants. The part number MSB92AWT1G explicitly denotes the Pb-free version compliant with RoHS Directive 2011/65/EU. Both versions share identical electrical specifications and SC-70 package dimensions, allowing drop-in substitution in lead-free reflow processes without layout or thermal redesign.

What is the DC current gain (hFE) range for MSB92AWT1 at different operating points?

The MSB92AWT1 exhibits hFE1 = 25–200 at VCE = −10 V, IC = −1.0 mA; hFE2 = 40–200 at IC = −10 mA; and hFE3 = 25–200 at IC = −30 mA. These ranges reflect production lot variation and temperature dependence (tested at 25°C). At −55°C and +125°C, hFE shifts significantly-designers must verify bias stability across the full −55°C to +125°C junction temperature range using the curves in Figure 3 of the datasheet.

Can MSB92AWT1 be used in switching applications above 100 kHz?

MSB92AWT1 has an fT of 50 MHz, indicating potential for RF amplification, but its switching speed is limited by minority-carrier storage time and package parasitics. In practical hard-switching applications, reliable operation is confirmed up to ~500 kHz with optimized base drive (IB ≥ 10% of IC), but turn-off delay increases sharply above 1 MHz. For >1 MHz switching, discrete MOSFETs or dedicated HV gate drivers are recommended instead of MSB92AWT1.

What is the thermal resistance junction-to-ambient (RθJA) for MSB92AWT1 on a standard FR-4 PCB?

While RθJA is not explicitly specified in the datasheet, the 150 mW power dissipation rating assumes mounting on a FR-4 PCB using the minimum recommended footprint per Note 1. Based on industry-standard SOT-323 thermal models and measured data, RθJA is approximately 833°C/W under those conditions. Actual RθJA will vary with copper area, layer count, and airflow-designers should perform thermal simulation or empirical testing if TJ exceeds 125°C under worst-case load and ambient conditions.