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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MSB92T1G

Name: MSB92T1G
Brand: onsemi
SKU: MSB92T1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MSB92T1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MSB92T1G.pdf

Description:: TRANS PNP 300V 0.15A SC-59

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MSB92T1G from onsemi is a PNP silicon planar transistor designed for high-voltage general-purpose amplifier applications, featuring −300 Vdc collector-emitter and collector-base breakdown voltages, 150 mAdc continuous collector current, and 150 mW power dissipation in SC−59 surface-mount package. It operates across −55°C to +150°C and delivers h_FE ≥25 at −1.0 mAdc.

For engineers reviewing the MSB92T1G datasheet, pinout, applications, or equivalent options, this device serves as a high-voltage switching and linear amplification solution where robust breakdown ratings, low saturation voltage (V_CE(sat) ≤ −0.5 Vdc), and stable gain over temperature are critical selection criteria.

Technical Context

This PNP transistor supports high-voltage operation up to −300 Vdc in both V_(BR)CEO and V_(BR)CBO, with emitter-base breakdown limited to −5.0 Vdc. Its f_T of 50 MHz enables RF-capable small-signal amplification, while C_cb ≤ 6.0 pF ensures minimal Miller effect in switching configurations.

Designed for surface-mount use in space-constrained PCBs, the MSB92T1G uses the SC−59 (Case 318D, Style 1) package with defined pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. Thermal performance is specified for FR-4 mounting with 150°C maximum junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	−300 Vdc - supports high-side switching in industrial HV rails up to 300 V
I_C (continuous)	150 mAdc - suitable for medium-current driver stages and relay drivers
P_D	150 mW - requires thermal-aware layout on FR-4; no heatsink needed below 100 mW
h_FE @ −10 mAdc	≥40 - enables low-base-drive amplifier designs with predictable DC gain
V_CE(sat)	≤ −0.5 Vdc @ −20 mAdc/−2 mAdc - minimizes conduction loss in saturated switch mode
f_T	50 MHz - usable in audio preamps and low-frequency RF amplifiers
C_cb	≤ 6.0 pF @ −20 Vdc - reduces high-frequency instability in common-emitter stages

Pinout & Package

The MSB92T1G is housed in the SC−59 surface-mount package (Case 318D, Style 1), measuring 2.90 × 1.50 × 1.15 mm with 1.90 mm lead pitch. It is Pb-free and optimized for automated assembly on FR-4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Base	Control terminal for forward-active and saturation biasing; requires current-limiting resistor in most driver circuits
Pin 2	Emitter	Common reference node in common-emitter configuration; connects to higher-potential rail in PNP high-side switches
Pin 3	Collector	Output terminal carrying load current; reverse-biased during off-state to sustain −300 Vdc blocking

Key Features

Feature	Design Value
High-voltage PNP architecture	Enables direct replacement of legacy −300 V PNP transistors without redesigning HV bias networks
Pb-free SC−59 package	Complies with RoHS and JEDEC J-STD-020 reflow profiles for lead-free manufacturing
Wide operating temperature range	Functional from −55°C to +150°C - validated for under-hood automotive and industrial control environments
Low V_CE(sat) and V_BE(sat)	Reduces power loss in linear regulators and discrete HV switch drivers operating near thermal limits

Applications

Industrial Relay Drivers	High-Voltage Linear Regulators
Use Scenario: Driving 24–48 VDC industrial relays requiring >100 mA coil current and isolation from −300 V bus transients. IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil return path with fast turn-off via base pull-up. Use Value: −300 V_(BR)CEO withstands inductive kickback; V_CE(sat) ≤ −0.5 Vdc limits self-heating at 150 mAdc.	Use Scenario: Pass element in negative-output adjustable linear regulators supplying −15 V to −24 V at up to 100 mA. IC Role / Device Role / Timing Role: Series pass transistor regulating output by modulating base current in response to error amplifier feedback. Use Value: Stable h_FE ≥40 at −10 mAdc ensures predictable loop gain; 150°C T_J(max) supports enclosed enclosure operation.
Audio Pre-amplifier Stages	Legacy Equipment HV Signal Conditioning
Use Scenario: First-stage gain block in battery-powered portable audio analyzers handling −10 V input signals. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration for linearity and bandwidth control. Use Value: f_T = 50 MHz provides >1 MHz small-signal bandwidth; C_cb ≤ 6.0 pF minimizes Miller capacitance distortion.	Use Scenario: Replacement for obsolete −300 V PNP transistors in aging test equipment power supplies and deflection circuits. IC Role / Device Role / Timing Role: Direct-fit discrete component restoring functionality without board rework or footprint change. Use Value: Identical SC−59 footprint and pinout (Style 1) ensures mechanical and electrical drop-in compatibility.

Industrial Relay Drivers

High-Voltage Linear Regulators

Use Scenario: Driving 24–48 VDC industrial relays requiring >100 mA coil current and isolation from −300 V bus transients.

IC Role / Device Role / Timing Role: PNP high-side switch controlling relay coil return path with fast turn-off via base pull-up.

Use Value: −300 V_(BR)CEO withstands inductive kickback; V_CE(sat) ≤ −0.5 Vdc limits self-heating at 150 mAdc.

Use Scenario: Pass element in negative-output adjustable linear regulators supplying −15 V to −24 V at up to 100 mA.

IC Role / Device Role / Timing Role: Series pass transistor regulating output by modulating base current in response to error amplifier feedback.

Use Value: Stable h_FE ≥40 at −10 mAdc ensures predictable loop gain; 150°C T_J(max) supports enclosed enclosure operation.

Audio Pre-amplifier Stages

Legacy Equipment HV Signal Conditioning

Use Scenario: First-stage gain block in battery-powered portable audio analyzers handling −10 V input signals.

IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration for linearity and bandwidth control.

Use Value: f_T = 50 MHz provides >1 MHz small-signal bandwidth; C_cb ≤ 6.0 pF minimizes Miller capacitance distortion.

Use Scenario: Replacement for obsolete −300 V PNP transistors in aging test equipment power supplies and deflection circuits.

IC Role / Device Role / Timing Role: Direct-fit discrete component restoring functionality without board rework or footprint change.

Use Value: Identical SC−59 footprint and pinout (Style 1) ensures mechanical and electrical drop-in compatibility.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	Same −300 V_(BR)CEO, but TO-92 package (larger footprint, lower power rating: 625 mW); h_FE min 25 at −10 mAdc	Requires PCB layout change; better suited for through-hole prototyping or low-volume manual assembly	Select when mechanical mounting flexibility or higher dissipation margin is prioritized over SMT density
MMBT92	SC-70 package (smaller than SC−59), same −300 V ratings, but lower I_C (100 mAdc) and P_D (200 mW); h_FE min 40 at −10 mAdc	Higher density but reduced current capability; not recommended for >100 mAdc loads	Select only for space-constrained designs with verified <100 mAdc peak current and adequate thermal relief

Compared with MPSA92 and MMBT92, the MSB92T1G uniquely balances SC−59 surface-mount compatibility, −300 V robustness, 150 mAdc drive capability, and 150 mW dissipation-making it optimal for production-grade industrial SMT assemblies where reliability and thermal margin are non-negotiable.

Availability

MSB92T1G is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage linear regulators, and legacy equipment repair requiring stable component supply and long-term obsolescence mitigation.

Supply support for MSB92T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MSB92T1G belongs to onsemi's high-voltage discrete transistor product line, engineered specifically for industrial control, power conversion, and legacy system replacement where −300 V PNP switching and amplification are required.

FAQ

What is the maximum collector-emitter voltage rating for the MSB92T1G?

The MSB92T1G has a guaranteed minimum collector-emitter breakdown voltage V_(BR)CEO of −300 Vdc at I_C = −1.0 mAdc and I_B = 0. This rating is validated per onsemi's datasheet Rev. 2 (January 2025) and defines the absolute maximum reverse bias the device can block in common-emitter configuration without avalanche conduction. Exceeding this voltage risks permanent degradation of the MSB92T1G.

Is the MSB92T1G compatible with lead-free reflow processes?

Yes, the MSB92T1G is Pb-free and qualified for standard lead-free reflow soldering per JEDEC J-STD-020. Its SC−59 package meets IPC/JEDEC specifications for moisture sensitivity level (MSL) and thermal profile compliance. The "G" suffix in MSB92T1G explicitly denotes RoHS-compliant packaging, and onsemi confirms full compatibility with peak reflow temperatures up to 260°C for the MSB92T1G.

What is the pin configuration of the MSB92T1G in its SC−59 package?

The MSB92T1G uses SC−59 Case 318D Style 1 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This configuration is confirmed in the official onsemi datasheet diagram and mechanical drawing (Issue J, 15 FEB 2024). No alternate pinouts (e.g., Style 2–6) apply to the MSB92T1G; using incorrect orientation will result in functional failure or damage to the MSB92T1G.

Does the MSB92T1G have specified gain variation across temperature?

Yes, the MSB92T1G's DC current gain h_FE is characterized from −55°C to +125°C. Figure 3 in the onsemi datasheet shows h_FE ≥25 at −1.0 mAdc across all three temperatures, with typical values of ~100 at 25°C, ~60 at −55°C, and ~40 at +125°C. This data confirms the MSB92T1G maintains usable gain in extended industrial environments without external compensation.

Can the MSB92T1G be used as a direct replacement for older MMBT92 or MPSA92 transistors?

The MSB92T1G shares identical −300 V_(BR)CEO and −300 V_(BR)CBO ratings with MPSA92 and MMBT92, but differs in package and current rating. It is a direct SC−59 footprint replacement for MMBT92 (same package), but not for TO-92 MPSA92. For MPSA92, board redesign is required. Always verify base drive and thermal design for the MSB92T1G before substitution.

MSB92T1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 150 mA

Voltage - Collector Emitter Breakdown (Max):: 300 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 2mA, 20mA

Current - Collector Cutoff (Max):: 250nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 25 @ 30mA, 10V

Power - Max:: 150 mW

Frequency - Transition:: 50MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

MSB92T1G FAQ

1.How can I place an order for MSB92T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MSB92T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSB92T1G reliable?

The price and inventory of MSB92T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSB92T1G is usually 5 days.

3.What payment methods are accepted for MSB92T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSB92T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSB92T1G?

MSB92T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSB92T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSB92T1G?

For technical support, including MSB92T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSB92T1G requirements.

6.How does Aetrix verify that MSB92T1G is sourced from the original manufacturer or authorized distributors?

All MSB92T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSB92T1G meets industry standards.

7.What is the process for return or replacement of MSB92T1G?

All MSB92T1G units undergo pre-shipment inspection (PSI). If there is an issue with MSB92T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSB92T1G part is unused and in its original packaging.

Return procedure for MSB92T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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