onsemi MSB92WT1

Overview

MSB92WT1 from onsemi is a PNP silicon planar transistor designed for high-voltage general-purpose amplifier applications, featuring −300 Vdc collector-emitter breakdown voltage, 500 mAdc continuous collector current, and 150 mW power dissipation in SC-70/SOT-323 package; used in high-voltage biasing and signal amplification stages of industrial power supplies.

For engineers reviewing the MSB92WT1 datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage PNP switching capability, SOT-323 thermal performance at elevated junction temperatures, and DC current gain variation across −55°C to +125°C operating range.

Technical Context

This device operates as a high-voltage PNP bipolar junction transistor with fixed three-terminal topology (Base, Emitter, Collector), optimized for linear amplification and switching in low-power surface-mount circuits. Its −300 Vdc V(BR)CEO rating enables use in flyback snubber networks and HV bias rails where reverse-blocking capability exceeds standard transistors.

Electrical behavior is defined by hFE ranging 25–200 depending on IC (1–30 mAdc), VCE(sat) ≤ −0.5 Vdc at IC/IB = 10, and fT ≥ 50 MHz under specified RF conditions - confirming suitability for medium-frequency analog gain stages and pulse amplification up to ~20 MHz.

Key Specifications

Pinout & Package

The MSB92WT1 is housed in SC-70 / SOT-323 package (Case 419, Style 3), a low-profile surface-mount outline with 1.3 mm × 2.1 mm footprint and 0.95 mm height, optimized for space-constrained PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage transistor applications.

Compared with MPSA92 and MMBT92, the MSB92WT1 delivers identical high-voltage PNP functionality in the smallest standardized surface-mount package (SOT-323), enabling ultra-compact designs where board space is constrained and thermal load remains within 150 mW limits.

Availability

MSB92WT1 is available at Aetrix Electronics and suitable for high-voltage bias supplies, flyback snubbers, industrial sensor interfaces, and legacy CRT driver circuits requiring stable component supply and RoHS-compliant sourcing.

Supply support for MSB92WT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MSB92WT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable high-voltage amplification and switching in cost-sensitive, space-constrained applications where SOT-323 packaging and −300 Vdc capability are essential.

FAQ

What is the maximum collector-emitter voltage rating for MSB92WT1?

The MSB92WT1 has a guaranteed minimum collector-emitter breakdown voltage V(BR)CEO of −300 Vdc at IC = −1.0 mAdc and IB = 0. This rating is confirmed in the official onsemi datasheet and applies across the full operating temperature range. Designers must ensure that applied VCE never exceeds this value to prevent avalanche-induced degradation or catastrophic failure. The MSB92WT1 maintains this rating consistently with its companion variant MSB92AWT1G.

Is MSB92WT1 RoHS-compliant and lead-free?

Yes, the MSB92WT1 is RoHS-compliant and lead-free, as explicitly stated in the onsemi datasheet features section. The "G" suffix in the ordering part number MSB92WT1G denotes Pb-free packaging, and the device meets halogen-free and BFR-free requirements per JEDEC J-STD-609. This compliance is verified through onsemi's material declarations and applies to all units shipped under this part number.

What is the pin configuration of MSB92WT1 in the SOT-323 package?

The MSB92WT1 uses SOT-323 package Style 3, with Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector - confirmed in the mechanical case outline diagram on page 3 of the official datasheet. This pinout differs from MMBT92 (Emitter/Base/Collector) and must be verified during PCB layout to avoid functional failure. The marking "xx M" on the top surface aligns with this pin assignment.

Does MSB92WT1 support operation at elevated temperatures?

Yes, the MSB92WT1 is rated for junction temperatures from −55°C to +150°C and storage temperatures over the same range. Electrical characteristics including hFE and VCE(sat) are characterized at −55°C, 25°C, and +125°C, confirming stable performance across industrial and automotive under-hood environments. Derating of PD is required above 25°C ambient per the thermal resistance curve in the datasheet.

What is the typical current-gain bandwidth product (fT) of MSB92WT1?

The MSB92WT1 has a minimum fT of 50 MHz, measured at IC = −10 mAdc, VCE = −20 Vdc, and f = 20 MHz. This value is specified in the Small Signal Characteristics table and reflects usable bandwidth for medium-frequency analog amplification. The MSB92WT1 achieves this while maintaining low Ccb (≤6.0 pF), supporting stable operation in common-emitter configurations without excessive phase shift.