Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MSD601-RT1

Name: MSD601-RT1
Brand: onsemi
SKU: MSD601-RT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MSD601-RT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MSD601-RT1.pdf

Description:: TRANS NPN 50V 0.1A SC-59

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,944

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MSD601-RT1 from onsemi is an NPN general-purpose amplifier transistor in SC-59 surface-mount package, rated for 50 V_CEO, 100 mA continuous collector current, and 200 mW power dissipation; it delivers h_FE = 210–340 at 2 mA and supports automotive applications per AEC-Q101 qualification.

For engineers reviewing the MSD601-RT1 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO rating, h_FE consistency across temperature, V_CE(sat) at 100 mA/10 mA drive, Pb-free compliance, and SC-59 thermal derating behavior.

Technical Context

This NPN bipolar junction transistor operates in linear amplification and switching modes with verified DC current gain spanning 210–340 at low-current bias (2 mA) and 90–? at high-current bias (100 mA), indicating gain compression under load. Its breakdown voltages-V_(BR)CEO = 50 V, V_(BR)CBO = 60 V, and V_(BR)EBO = 7.0 V-define safe operating limits for common-emitter, common-base, and emitter-follower configurations.

The device exhibits V_CE(sat) ≤ 0.5 V at I_C = 100 mA and I_B = 10 mA, confirming robust saturation performance for low-side switching; its thermal derating curve shows linear power reduction above 25 °C ambient, reaching zero dissipation at 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	50 Vdc - maximum collector-emitter voltage before avalanche breakdown under open-base condition
I_C Continuous	100 mAdc - sustained collector current limit at T_A = 25 °C with derating above ambient
P_D	200 mW - maximum power dissipation at 25 °C ambient, linearly reduced to zero at 150 °C
h_FE (low I_C)	210–340 - DC current gain at V_CE = 10 V, I_C = 2.0 mA, defining small-signal amplification capability
V_CE(sat)	≤ 0.5 V - collector-emitter saturation voltage at I_C = 100 mA, I_B = 10 mA, enabling efficient switching
Junction Temp	150 °C - maximum allowable silicon junction temperature, critical for thermal design margin

Pinout & Package

MSD601-RT1 is housed in the SC-59 (Case 318D) surface-mount package, measuring 2.90 × 1.50 × 1.15 mm with 1.90 mm lead pitch. The package supports automated placement and reflow soldering per JEDEC standards.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biasing the base-emitter junction; requires current-limited drive to avoid damage
2	Emiter	Current return path in common-emitter configuration; connected to ground or low-impedance reference
3	Collector	Output terminal carrying amplified or switched load current; connects to supply rail or active load

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive electronics per stress test requirements including HTOL, TC, HAST, and ESD
Pb-Free / RoHS Compliant	Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free material specifications
SC-59 Package	Small-outline SMT footprint with 3-pin configuration optimized for space-constrained PCB layouts
Wide T_stg Range	−55 °C to +150 °C storage temperature enables use in extended-environment industrial and automotive systems

Applications

Automotive Signal Conditioning	Industrial Sensor Interface
Use Scenario: Amplifying low-level analog signals from engine knock sensors or cabin temperature thermistors in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: NPN amplifier configured in common-emitter topology to provide voltage gain and impedance transformation. Use Value: Stable h_FE over −40 °C to +125 °C ambient and AEC-Q101 qualification ensure functional reliability in under-hood environments.	Use Scenario: Buffering and level-shifting output from 3.3 V microcontroller GPIO to drive 5 V logic inputs or optocoupler LEDs in PLC I/O modules. IC Role / Device Role / Timing Role: Low-power NPN switch operating in saturation mode with <0.5 V V_CE(sat) at 10 mA drive. Use Value: Confirmed V_CE(sat) ≤ 0.5 V at I_C/I_B = 10 ensures minimal power loss and heat generation in always-on interface circuits.
Consumer Audio Preamp Stage	Power Supply Feedback Control
Use Scenario: Building discrete two-stage preamplifier for portable headphone amplifiers using dual-MSD601-RT1 in cascode configuration. IC Role / Device Role / Timing Role: Small-signal NPN transistor providing linear gain with h_FE ≥ 210 at 2 mA bias point. Use Value: Verified h_FE min of 210 at V_CE = 10 V, I_C = 2 mA supports predictable AC gain and low distortion in Class-A operation.	Use Scenario: Implementing error amplifier in isolated flyback converter feedback loop, where transistor drives optocoupler LED based on secondary-side voltage error. IC Role / Device Role / Timing Role: Linear-mode NPN current source controlling optocoupler LED current proportional to output voltage deviation. Use Value: V_(BR)EBO = 7.0 V allows direct connection to 5 V reference without external base resistor, simplifying bias network.

Automotive Signal Conditioning

Industrial Sensor Interface

Use Scenario: Amplifying low-level analog signals from engine knock sensors or cabin temperature thermistors in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: NPN amplifier configured in common-emitter topology to provide voltage gain and impedance transformation.

Use Value: Stable h_FE over −40 °C to +125 °C ambient and AEC-Q101 qualification ensure functional reliability in under-hood environments.

Use Scenario: Buffering and level-shifting output from 3.3 V microcontroller GPIO to drive 5 V logic inputs or optocoupler LEDs in PLC I/O modules.

IC Role / Device Role / Timing Role: Low-power NPN switch operating in saturation mode with <0.5 V V_CE(sat) at 10 mA drive.

Use Value: Confirmed V_CE(sat) ≤ 0.5 V at I_C/I_B = 10 ensures minimal power loss and heat generation in always-on interface circuits.

Consumer Audio Preamp Stage

Power Supply Feedback Control

Use Scenario: Building discrete two-stage preamplifier for portable headphone amplifiers using dual-MSD601-RT1 in cascode configuration.

IC Role / Device Role / Timing Role: Small-signal NPN transistor providing linear gain with h_FE ≥ 210 at 2 mA bias point.

Use Value: Verified h_FE min of 210 at V_CE = 10 V, I_C = 2 mA supports predictable AC gain and low distortion in Class-A operation.

Use Scenario: Implementing error amplifier in isolated flyback converter feedback loop, where transistor drives optocoupler LED based on secondary-side voltage error.

IC Role / Device Role / Timing Role: Linear-mode NPN current source controlling optocoupler LED current proportional to output voltage deviation.

Use Value: V_(BR)EBO = 7.0 V allows direct connection to 5 V reference without external base resistor, simplifying bias network.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	h_FE = 100–300 at I_C = 10 mA; V_(BR)CEO = 40 V; same SC-59 package	Lower V_CEO rating limits use in 48 V or higher supply rails	Select when lower voltage operation (<40 V) and cost sensitivity outweigh need for 50 V margin
BC847BW	h_FE = 200–450 at I_C = 2 mA; V_(BR)CEO = 45 V; SOT-323 package (smaller footprint)	SOT-323 has lower thermal mass and different pad layout; not drop-in compatible	Choose for higher gain consistency and tighter tolerance bands where board redesign is acceptable

Compared with MMBT3904LT1G and BC847BW, MSD601-RT1 provides superior 50 V_CEO rating and AEC-Q101 qualification-making it preferred for automotive signal conditioning and industrial feedback loops requiring extended voltage headroom and automotive-grade reliability.

Availability

MSD601-RT1 is available at Aetrix Electronics and suitable for automotive signal conditioning, industrial sensor interface, consumer audio preamp stages, and power supply feedback control requiring stable component supply and long-term lifecycle support.

Supply support for MSD601-RT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MSD601-RT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable amplification and switching in cost-sensitive, space-constrained designs across automotive and industrial markets.

FAQ

What is the maximum collector-emitter voltage rating for MSD601-RT1?

The MSD601-RT1 has a maximum collector-emitter breakdown voltage V_(BR)CEO of 50 Vdc at I_C = 2.0 mAdc and I_B = 0. This rating defines the upper limit for safe operation in common-emitter configurations and must be respected with appropriate voltage margin in circuit design. Exceeding this value risks irreversible avalanche failure. The MSD601-RT1 datasheet confirms this parameter under "Maximum Ratings" and "Electrical Characteristics" sections.

Is MSD601-RT1 qualified for automotive applications?

Yes, MSD601-RT1 is AEC-Q101 qualified and PPAP capable, with the NSV prefix (as in NSVMSD601-RT1G) indicating automotive-specific site and control change requirements. It undergoes rigorous stress testing including high-temperature operating life, temperature cycling, and electrostatic discharge validation. The MSD601-RT1 meets automotive-grade reliability standards required for under-hood and cabin electronics.

What package type does MSD601-RT1 use and what are its dimensions?

MSD601-RT1 uses the SC-59 package (Case 318D), a 3-pin surface-mount outline measuring 2.90 mm × 1.50 mm × 1.15 mm with 1.90 mm lead pitch. This compact footprint supports high-density PCB layouts and standard reflow soldering profiles. The marking diagram and mechanical drawings in the official MSD601-RT1 datasheet confirm pin 1 = Base, pin 2 = Emitter, pin 3 = Collector orientation.

What is the DC current gain range of MSD601-RT1 at typical operating conditions?

The MSD601-RT1 exhibits h_FE = 210–340 at V_CE = 10 Vdc and I_C = 2.0 mAdc, and h_FE = 90 (min) at V_CE = 2.0 Vdc and I_C = 100 mAdc. This gain compression at higher currents is typical for bipolar transistors and must be accounted for in switching or high-current amplification designs. All h_FE values are specified in the "Electrical Characteristics" table of the MSD601-RT1 datasheet.

Does MSD601-RT1 meet RoHS and Pb-free requirements?

Yes, MSD601-RT1 is Pb-free, halogen-free/BFR-free, and fully RoHS compliant per EU Directive 2011/65/EU. The "G" suffix in part numbers like MSD601-RT1G and NSVMSD601-RT1G explicitly denotes Pb-free packaging. This compliance is documented in the "Features" section and "Ordering Information" page of the official MSD601-RT1 datasheet published by onsemi.

MSD601-RT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 210 @ 2mA, 10V

Power - Max:: 200 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

MSD601-RT1 FAQ

1.How can I place an order for MSD601-RT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MSD601-RT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSD601-RT1 reliable?

The price and inventory of MSD601-RT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSD601-RT1 is usually 5 days.

3.What payment methods are accepted for MSD601-RT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSD601-RT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSD601-RT1?

MSD601-RT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSD601-RT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSD601-RT1?

For technical support, including MSD601-RT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSD601-RT1 requirements.

6.How does Aetrix verify that MSD601-RT1 is sourced from the original manufacturer or authorized distributors?

All MSD601-RT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSD601-RT1 meets industry standards.

7.What is the process for return or replacement of MSD601-RT1?

All MSD601-RT1 units undergo pre-shipment inspection (PSI). If there is an issue with MSD601-RT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSD601-RT1 part is unused and in its original packaging.

Return procedure for MSD601-RT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…