onsemi MSD601-RT2

Overview

MSD601-RT2 from ON Semiconductor is an NPN general-purpose amplifier transistor in SC-59 (Case 318D–04) surface-mount package, rated for V(BR)CEO = 50 Vdc, IC = 100 mAdc continuous, hFE = 210–460 at VCE = 10 Vdc/IC = 2.0 mAdc, VCE(sat) ≤ 0.5 Vdc, and PD = 200 mW - used in low-power signal amplification and switching circuits in consumer and industrial control modules.

For engineers reviewing the MSD601-RT2 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical ratings, thermal limits, SC-59 terminal mapping, hFE binning context, and real-world design implications for bias stability, saturation drive, and PCB layout compliance.

Technical Context

This device operates as a silicon NPN bipolar junction transistor optimized for linear amplification and low-current switching. Its hFE range spans 210–460 under standard test conditions (VCE = 10 Vdc, IC = 2.0 mAdc), with guaranteed minimum hFE of 210 for the RT2 variant - distinct from RT1 (210–340) and ST1 (290–460) bins.

Thermal performance is defined by TJ(max) = 150°C and RθJA = 625°C/W on standard FR-4 with recommended footprint, yielding PD = 200 mW at TA = 25°C. The SC-59 package uses a 3-pin configuration with emitter-base-collector pinout (Style 1), and supports reflow soldering per JEDEC J-STD-020 profile with peak temperature ≤ 260°C for ≤10 seconds.

Key Specifications

Pinout & Package

MSD601-RT2 is housed in the SC-59 plastic surface-mount package (Case 318D–04, Style 1), measuring 2.70–3.10 mm × 1.30–1.70 mm × 1.00–1.30 mm (L × W × H), with gull-wing leads optimized for automated placement and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT3904LT1G and BC847BW, MSD601-RT2 offers superior voltage rating (50 Vdc), tighter hFE consistency within its bin, and proven thermal performance on standard FR-4 - making it optimal for cost-sensitive, medium-reliability signal amplification where 50 V headroom and predictable gain are critical.

Availability

MSD601-RT2 is available at Aetrix Electronics and suitable for audio preamplifiers, LED driver switches, DC motor control circuits, and sensor signal conditioning requiring stable component supply and consistent hFE binning across production batches.

Supply support for MSD601-RT2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and consumer applications.

The MSD601-RT2 belongs to ON Semiconductor's small-signal NPN transistor product line, designed for reliable, cost-effective amplification and switching in space-constrained, low-to-medium power electronics.

FAQ

What is the hFE range for MSD601-RT2, and how does it differ from MSD601-RT1?

The MSD601-RT2 has a guaranteed hFE range of 210–460 at VCE = 10 Vdc and IC = 2.0 mAdc. This differs from MSD601-RT1, which is binned to 210–340 under identical test conditions. The wider upper bound of MSD601-RT2 supports higher-gain amplifier designs without increasing base drive complexity, while maintaining the same minimum gain threshold for predictable biasing.

Can MSD601-RT2 be used in place of MSD601-ST1?

No - MSD601-RT2 and MSD601-ST1 are distinct hFE-binned variants: MSD601-ST1 is specified for hFE = 290–460, whereas MSD601-RT2 is 210–460. Though both share identical maximum ratings and package, substituting MSD601-RT2 for MSD601-ST1 may result in lower-than-expected gain in circuits relying on the 290+ minimum hFE of the ST1 bin, potentially affecting bias stability or signal swing.

What is the maximum allowable soldering temperature for MSD601-RT2?

The maximum allowable soldering temperature for MSD601-RT2 is 260°C for no more than 10 seconds during reflow, per ON Semiconductor's recommended process guidelines. Exceeding this limit risks junction damage or metallurgical degradation. Preheating is mandatory, and the temperature gradient between preheat and soldering zones must not exceed 100°C to avoid thermal shock.

Is MSD601-RT2 suitable for switching 5 V, 50 mA loads?

Yes - MSD601-RT2 supports IC = 100 mAdc continuous, well above 50 mA, and achieves VCE(sat) ≤ 0.5 Vdc at IC = 100 mAdc/IB = 10 mAdc. At 50 mA, saturation voltage will be lower, ensuring minimal conduction loss (<25 mW) and reliable turn-on with standard 5 V logic-level base drive.

What package type and pinout does MSD601-RT2 use?

MSD601-RT2 uses the SC-59 surface-mount package (Case 318D–04, Style 1), with pin 1 = Emitter, pin 2 = Base, and pin 3 = Collector. This gull-wing lead configuration is compatible with standard SMT pick-and-place equipment and reflow processes, and matches the mechanical footprint of other SC-59 transistors like the MMBT3904 series.