Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MSD601-ST1G

Name: MSD601-ST1G
Brand: onsemi
SKU: MSD601-ST1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: MSD601-ST1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MSD601-ST1G.pdf

Description:: TRANS NPN 50V 0.1A SC-59

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,283

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

MSD601-ST1G from onsemi is an NPN general-purpose amplifier transistor in SC-59 surface-mount package, rated for V_(BR)CEO = 50 V, I_C = 100 mA continuous, h_FE = 210–340 at 2 mA, and P_D = 200 mW. It serves as a low-power signal amplification or switching element in automotive sensor interfaces and portable power management circuits.

For engineers reviewing the MSD601-ST1G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q101 qualification, SC-59 thermal performance, V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, and guaranteed h_FE minimum of 210 at low-current bias - critical for stable gain in battery-powered analog front-ends.

Technical Context

This device operates as a silicon NPN bipolar junction transistor with fixed-emitter configuration and base-controlled current amplification. Its design supports linear amplification (V_CE ≥ 2 V) and saturated switching (V_CE(sat) ≤ 0.5 V), validated across −55 °C to +150 °C ambient range.

Electrical behavior is characterized by two h_FE bins: 210–340 at I_C = 2 mA/V_CE = 10 V for small-signal gain, and 90–? at I_C = 100 mA/V_CE = 2 V for high-current switching fidelity. Cutoff leakage is tightly specified: I_CEO ≤ 100 nA and I_CBO ≤ 0.1 μA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)CEO	50 Vdc - Ensures safe operation in 36 V automotive supply rails with margin against transients.
I_C Continuous	100 mAdc - Supports moderate-signal amplification without forced cooling in SC-59 footprint.
h_FE (low I_C)	210–340 - Delivers predictable small-signal voltage gain in sensor preamplifier stages.
V_CE(sat)	≤ 0.5 Vdc at I_C = 100 mA, I_B = 10 mA - Enables efficient low-loss switching in discrete load drivers.
P_D	200 mW - Matches thermal dissipation capability of SC-59 package at 25 °C ambient.
T_J Max	150 °C - Confirmed junction temperature limit for AEC-Q101-compliant automotive use.

Pinout & Package

MSD601-ST1G uses the SC-59 (Case 318D) surface-mount package: 2.90 mm × 1.50 mm × 1.15 mm body, 1.90 mm lead pitch, 3-terminal configuration with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires external bias network for active-region operation.
2	Emitter	Common reference terminal; connected to ground or low-impedance return path in CE configuration.
3	Collector	Output current sink; routed to load or pull-up resistor in amplifier/switch topologies.

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive applications including engine control sensors and body electronics.
Pb-Free / RoHS Compliant	Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free requirements.
Wide Operating Temperature	Functional across −55 °C to +150 °C ambient, supporting under-hood deployment.
Low Saturation Voltage	V_CE(sat) ≤ 0.5 V ensures <100 mW conduction loss at full rated current.

Applications

Automotive Sensor Interface	Portable Device Power Switching
Use Scenario: Amplifying low-level signals from temperature or pressure sensors in engine control units. IC Role / Device Role / Timing Role: NPN amplifier in common-emitter configuration with DC-coupled input and emitter-degenerated bias. Use Value: Guaranteed h_FE ≥ 210 at 2 mA enables stable gain calibration over temperature without trimming.	Use Scenario: Enabling/disabling 5 V peripheral rails in handheld medical monitors. IC Role / Device Role / Timing Role: Low-side switch controlled by microcontroller GPIO with 10 mA base drive. Use Value: V_CE(sat) ≤ 0.5 V limits power loss to <50 mW during sustained 100 mA load activation.
Industrial Signal Conditioning	Consumer Audio Preamp Stage
Use Scenario: Buffering and level-shifting analog outputs from 4–20 mA loop receivers. IC Role / Device Role / Timing Role: Linear amplifier operating at V_CE = 5–12 V with fixed collector resistor load. Use Value: Tight I_CEO ≤ 100 nA prevents output drift in high-impedance feedback networks.	Use Scenario: First-stage gain block in battery-powered headphone amplifiers. IC Role / Device Role / Timing Role: Class-A biased NPN amplifier with emitter-follower output stage. Use Value: 200 mW power rating allows continuous operation at 3.3 V supply with 10 kΩ collector load.

Automotive Sensor Interface

Portable Device Power Switching

Use Scenario: Amplifying low-level signals from temperature or pressure sensors in engine control units.

IC Role / Device Role / Timing Role: NPN amplifier in common-emitter configuration with DC-coupled input and emitter-degenerated bias.

Use Value: Guaranteed h_FE ≥ 210 at 2 mA enables stable gain calibration over temperature without trimming.

Use Scenario: Enabling/disabling 5 V peripheral rails in handheld medical monitors.

IC Role / Device Role / Timing Role: Low-side switch controlled by microcontroller GPIO with 10 mA base drive.

Use Value: V_CE(sat) ≤ 0.5 V limits power loss to <50 mW during sustained 100 mA load activation.

Industrial Signal Conditioning

Consumer Audio Preamp Stage

Use Scenario: Buffering and level-shifting analog outputs from 4–20 mA loop receivers.

IC Role / Device Role / Timing Role: Linear amplifier operating at V_CE = 5–12 V with fixed collector resistor load.

Use Value: Tight I_CEO ≤ 100 nA prevents output drift in high-impedance feedback networks.

Use Scenario: First-stage gain block in battery-powered headphone amplifiers.

IC Role / Device Role / Timing Role: Class-A biased NPN amplifier with emitter-follower output stage.

Use Value: 200 mW power rating allows continuous operation at 3.3 V supply with 10 kΩ collector load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC847BW	SOT-323 package; h_FE = 200–450 at 2 mA; V_(BR)CEO = 45 V; P_D = 250 mW.	Higher gain spread and lower breakdown voltage; not AEC-Q101 qualified.	Preferred where higher gain consistency is needed but automotive qualification is not required.
MMBT3904LT1G	SOT-23 package; h_FE = 100–300 at 10 mA; V_(BR)CEO = 40 V; P_D = 310 mW; no AEC-Q101 listing.	Lower V_(BR)CEO and wider h_FE tolerance; higher power rating but larger footprint.	Selected when board space permits SOT-23 and 40 V rail margin suffices.

Compared with BC847BW and MMBT3904LT1G, MSD601-ST1G provides tighter h_FE binning at low current, AEC-Q101 validation, and optimized thermal resistance in SC-59 - making it preferred for automotive signal chains where reliability and gain predictability are prioritized over maximum power handling.

Availability

MSD601-ST1G is available at Aetrix Electronics and suitable for automotive sensor interfaces, portable device power switching, and industrial signal conditioning requiring stable component supply and long-term lifecycle support.

Supply support for MSD601-ST1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MSD601-ST1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliable, cost-effective amplification and switching in harsh-environment electronics where AEC-Q101 compliance and thermal robustness are essential.

FAQ

What is the maximum collector-emitter voltage rating for MSD601-ST1G?

The MSD601-ST1G has a guaranteed minimum collector-emitter breakdown voltage V_(BR)CEO of 50 Vdc at I_C = 2.0 mAdc and I_B = 0. This rating defines the absolute maximum voltage the device can withstand in open-base configuration before avalanche conduction begins, and is validated per onsemi's test conditions in the official datasheet.

Is MSD601-ST1G qualified for automotive applications?

Yes, MSD601-ST1G is AEC-Q101 qualified and PPAP capable. The NSV prefix variant (NSVMSD601-RT1G) explicitly denotes automotive-grade manufacturing controls, and the device meets stress testing requirements for temperature cycling, humidity, and mechanical shock per the AEC-Q101 standard - confirmed in the onsemi datasheet revision history and features section.

What package type does MSD601-ST1G use?

MSD601-ST1G uses the SC-59 surface-mount package (Case 318D), measuring 2.90 mm × 1.50 mm × 1.15 mm with 1.90 mm lead pitch. Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector - matching the "Style 1" marking diagram in the onsemi mechanical drawings.

What is the DC current gain (h_FE) range for MSD601-ST1G at typical operating conditions?

At V_CE = 10 Vdc and I_C = 2.0 mAdc, MSD601-ST1G exhibits h_FE = 210–340. At higher current (V_CE = 2.0 Vdc, I_C = 100 mAdc), h_FE drops to 90–? (upper bound unspecified). These values are measured per JEDEC JESD22-B103 and published in the Electrical Characteristics table of the onsemi datasheet.

Does MSD601-ST1G meet RoHS and halogen-free requirements?

Yes, MSD601-ST1G is Pb-Free, halogen-free/BFR-free, and fully RoHS compliant per Directive 2011/65/EU. The "G" suffix in the part number and "Pb-Free Package" designation in the ordering information confirm this compliance, and the device carries the appropriate marking per onsemi's packaging specifications.

MSD601-ST1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 290 @ 2mA, 10V

Power - Max:: 200 mW

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

MSD601-ST1G FAQ

1.How can I place an order for MSD601-ST1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MSD601-ST1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MSD601-ST1G reliable?

The price and inventory of MSD601-ST1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSD601-ST1G is usually 5 days.

3.What payment methods are accepted for MSD601-ST1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSD601-ST1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MSD601-ST1G?

MSD601-ST1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MSD601-ST1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MSD601-ST1G?

For technical support, including MSD601-ST1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSD601-ST1G requirements.

6.How does Aetrix verify that MSD601-ST1G is sourced from the original manufacturer or authorized distributors?

All MSD601-ST1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSD601-ST1G meets industry standards.

7.What is the process for return or replacement of MSD601-ST1G?

All MSD601-ST1G units undergo pre-shipment inspection (PSI). If there is an issue with MSD601-ST1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MSD601-ST1G part is unused and in its original packaging.

Return procedure for MSD601-ST1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…