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onsemi MSD602-RT1
- Part No.:
- MSD602-RT1
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
MSD602-RT1.pdf
- Description:
- TRANS GP NPN 100MA 50V SC59
- Quantity:
- Payment:
- Shipping:
Inventory:75,000
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Product details
Overview
MSD602-RT1 from onsemi is a general-purpose NPN bipolar junction transistor designed for low-to-medium power amplification and switching in discrete analog and digital circuits. It features V(BR)CEO = 50 V, IC = 500 mA continuous, hFE = 120–240 at IC = 150 mA, VCE(sat) ≤ 0.6 V at IC = 300 mA/IB = 30 mA, and operates across −55 °C to +150 °C junction temperature. It is commonly used in automotive signal conditioning, LED driver stages, and industrial sensor interface circuits.
For engineers reviewing the MSD602-RT1 datasheet, pinout, applications, or equivalent options, key selection criteria include its SC-59 package compatibility, AEC-Q101 qualification for automotive use, guaranteed hFE range, thermal robustness up to 150 °C, and Pb-free RoHS-compliant construction.
Technical Context
The MSD602-RT1 is a silicon NPN BJT optimized for linear amplification and saturated switching. Its DC current gain (hFE) is specified at two operating points: 120–240 at IC = 150 mA and 40–? at IC = 500 mA, indicating gain compression at higher currents. The device supports safe operation up to 60 V collector-base and 7 V emitter-base reverse bias.
Thermal performance is defined by a 200 mW power dissipation limit at TA = 25 °C and a junction-to-ambient thermal resistance of ~300 °C/W in typical SC-59 mounting. Its Cob = 15 pF at VCB = 10 V enables moderate-frequency switching applications up to ~100 MHz (ft ≈ 100 MHz at IC = 10 mA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)CEO | 50 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines upper rail limit in amplifier or switch designs. |
| IC (continuous) | 500 mA - Continuous collector current rating; sets maximum steady-state load drive capability without derating. |
| hFE @ IC=150 mA | 120–240 - DC current gain range at mid-current; determines base drive requirements for linear or saturated operation. |
| VCE(sat) | ≤0.6 V @ IC=300 mA/IB=30 mA - Saturation voltage drop; directly impacts conduction loss and heat generation in switching applications. |
| PD | 200 mW @ TA=25 °C - Power dissipation limit; requires thermal design consideration for ambient >25 °C or pulsed operation. |
| TJ max | 150 °C - Maximum junction temperature; enables reliable operation in under-hood automotive or industrial enclosures. |
| Cob | 15 pF @ VCB=10 V - Output capacitance; influences high-frequency response and switching speed in amplifier or oscillator stages. |
Pinout & Package
MSD602-RT1 is housed in an SC-59 (Case 318D, Style 1) surface-mount plastic package measuring 2.90 × 1.50 × 1.15 mm with 1.90 mm lead pitch. It features gull-wing leads and Pb-free, RoHS-compliant construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; requires current-limited drive to bias transistor into active or saturation region. |
| 2 | Emitter | Current return path; typically grounded or connected to low-impedance reference in common-emitter configurations. |
| 3 | Collector | Output terminal; carries amplified or switched load current; connects to supply rail or load in standard topologies. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, HTRB, and ESD; supports PPAP documentation. |
| Pb-free / RoHS compliant | Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free material specifications for environmentally regulated production. |
| Wide temperature range | Specified operation from −55 °C to +150 °C junction temperature; suitable for under-dash, engine bay, or industrial control environments. |
| Low VCE(sat) | ≤0.6 V ensures <300 mW conduction loss at 300 mA, reducing thermal load in compact PCB layouts. |
| SC-59 footprint | Standardized 3-pin SOT-23-compatible outline enables drop-in replacement in existing layouts using automated placement equipment. |
Applications
| Automotive Signal Conditioning | Industrial Sensor Interface |
|---|---|
Use Scenario: Amplifying low-level analog signals from temperature or pressure sensors in engine control units. IC Role / Device Role / Timing Role: NPN amplifier stage providing 20–30 dB voltage gain with minimal distortion and stable bias over temperature. Use Value: Enables direct interfacing of millivolt-range sensor outputs to MCU ADC inputs without external op-amps, reducing BOM count. | Use Scenario: Level-shifting and buffering 4–20 mA loop signals in programmable logic controller (PLC) input modules. IC Role / Device Role / Timing Role: Discrete current-source driver and active load in I/V conversion circuitry. Use Value: Provides predictable hFE and low VCE(sat) to maintain loop accuracy within ±0.1% full scale across −40 °C to +85 °C ambient. |
| LED Driver Stage | Power Supply Enable Switch |
Use Scenario: Driving medium-brightness indicator LEDs (e.g., status panels, dashboard backlighting) in automotive dashboards. IC Role / Device Role / Timing Role: Saturated switch controlling LED current via base-driven on/off states. Use Value: Delivers consistent 20–50 mA LED current with <0.6 V dropout, minimizing power loss and self-heating in space-constrained assemblies. | Use Scenario: Enabling/disabling auxiliary 5 V or 3.3 V rails in multi-rail power management systems. IC Role / Device Role / Timing Role: Low-side enable switch placed between regulator output and load ground return. Use Value: Supports fast turn-on/turn-off (<100 ns) and withstands repeated hot-plug events due to robust V(BR)EBO = 7.0 V rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT3904LT1G | Lower V(BR)CEO (40 V), lower IC (200 mA), hFE = 100–300 at IC = 10 mA; smaller SOT-23 package. | Better suited for low-voltage, low-current signal amplification; not rated for automotive AEC-Q101. | Select when cost, board space, or low-current gain linearity are prioritized over voltage headroom or automotive qualification. |
| BC847BW | Same SC-59 package; V(BR)CEO = 45 V, IC = 100 mA, hFE = 110–220 at IC = 10 mA; no AEC-Q101 certification. | Targeted at consumer-grade portable electronics; lacks extended temperature and reliability validation. | Choose for non-automotive, commercial-grade applications where 50 V rating and 500 mA drive are unnecessary. |
Compared with MMBT3904LT1G and BC847BW, the MSD602-RT1 offers higher voltage and current ratings plus AEC-Q101 qualification-making it uniquely suitable for automotive and industrial environments requiring robustness, thermal margin, and process traceability.
Availability
MSD602-RT1 is available at Aetrix Electronics and suitable for automotive signal conditioning, industrial sensor interface, and LED driver applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for MSD602-RT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MSD602-RT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for reliability-critical discrete amplification and switching in harsh-environment electronics.
FAQ
What is the maximum collector-emitter voltage rating for the MSD602-RT1?
The MSD602-RT1 has a guaranteed minimum collector-emitter breakdown voltage V(BR)CEO of 50 V at IC = 10 mA and IB = 0. This rating defines the absolute maximum DC or peak repetitive voltage that can be applied between collector and emitter with the base open, beyond which avalanche breakdown may occur. Designers must maintain at least 20% derating margin in safety-critical applications.
Is the MSD602-RT1 qualified for automotive use?
Yes, the MSD602-RT1 is AEC-Q101 qualified and PPAP capable. It undergoes rigorous stress testing-including high-temperature operating life, temperature cycling, and biased humidity testing-to meet automotive electronic component reliability standards. The "S" prefix variant (e.g., SMSD602-RT1G) explicitly denotes automotive-specific site and change control requirements.
What package type does the MSD602-RT1 use, and is it RoHS compliant?
The MSD602-RT1 uses the SC-59 (Case 318D, Style 1) surface-mount package, identical in outline to SOT-23 but with specific internal leadframe geometry. It is Pb-free, halogen-free/BFR-free, and fully RoHS compliant per EU Directive 2011/65/EU, with marking indicating Pb-free status via microdot or "G" suffix in part number variants.
What is the DC current gain (hFE) range for the MSD602-RT1 at typical operating conditions?
The MSD602-RT1 exhibits hFE = 120–240 at VCE = 10 V and IC = 150 mA, and hFE = 40–? at VCE = 10 V and IC = 500 mA. This wide spread reflects gain compression at high current, requiring careful base drive design. The minimum hFE is guaranteed per datasheet binning; actual devices fall within this range and are verified during production test.
Does the MSD602-RT1 have a specified thermal resistance value?
The datasheet does not list a formal RθJA value, but thermal characterization shows a junction-to-ambient resistance of approximately 300 °C/W under standard JEDEC PCB conditions (single-layer 1 in² copper pad). Derating curves indicate 200 mW maximum power at 25 °C ambient, decreasing linearly to zero at 150 °C junction temperature-enabling accurate thermal design for known airflow and board layout.
MSD602-RT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
MSD602-RT1 FAQ
1.How can I place an order for MSD602-RT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MSD602-RT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MSD602-RT1 reliable?
The price and inventory of MSD602-RT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MSD602-RT1 is usually 5 days.
3.What payment methods are accepted for MSD602-RT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MSD602-RT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MSD602-RT1?
MSD602-RT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MSD602-RT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MSD602-RT1?
For technical support, including MSD602-RT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MSD602-RT1 requirements.
6.How does Aetrix verify that MSD602-RT1 is sourced from the original manufacturer or authorized distributors?
All MSD602-RT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MSD602-RT1 meets industry standards.
7.What is the process for return or replacement of MSD602-RT1?
All MSD602-RT1 units undergo pre-shipment inspection (PSI). If there is an issue with MSD602-RT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MSD602-RT1 part is unused and in its original packaging.
Return procedure for MSD602-RT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MSD602-RT1 Tags
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MMBT3906LT1G
onsemi
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MMBT3904LT1G
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MMBT3906-7-F
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MMBT2222A-7-F
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BC846BLT1G
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BC847B,215
Nexperia USA Inc.
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MMBTA06LT1G
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