NXP Semiconductors MW7IC2425NBR1

Overview

MW7IC2425NBR1 from Freescale Semiconductor is a dual-stage N-channel enhancement-mode lateral RF power MOSFET designed for 2450 MHz CW large-signal output and driver applications. It delivers 25 W CW output power at 28 Vdc, achieves 27.7 dB power gain and 43.8% power added efficiency, and operates with quiescent currents of 55 mA (Stage 1) and 195 mA (Stage 2). It is used in industrial heating, medical diathermy, and scientific RF plasma generation systems.

For engineers reviewing the MW7IC2425NBR1 datasheet, MW7IC2425NBR1 pinout, MW7IC2425NBR1 application, or MW7IC2425NBR1 equivalent, key selection criteria include its 2450 MHz narrowband performance, integrated quiescent current temperature compensation with enable/disable function, 10:1 VSWR ruggedness at 25 W, 225°C junction rating, and TO-270 WB-16 plastic package with exposed source.

Technical Context

This device integrates two cascaded LDMOS stages on a single die with independent gate biasing (VGS1/VGS2) and drain supplies (VDS1/VDS2), enabling optimized linearity and efficiency in fixed-frequency 2.45 GHz ISM band amplifiers. Its internal matching eliminates external input/output matching networks in narrowband configurations.

The integrated quiescent current thermal tracking circuit dynamically adjusts gate voltage to maintain stable IDQ across temperature, while the exposed backside source terminal provides low-inductance, low-thermal-resistance path to heatsink - critical for high-power CW operation up to 225°C junction temperature.

Key Specifications

Pinout & Package

Package: TO-270 WB-16 (Case 1886-01), plastic overmolded package with exposed copper backside serving as common source terminal for both transistors. Mounting requires bolt-down or clamping per AN3263/AN3789 for optimal thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MW7IC2425NR1 and MW7IC2425GNR1, the MW7IC2425NBR1 offers the lowest thermal resistance (1.2°C/W Stage 2) and highest mechanical robustness for bolt-down mounting - making it the preferred choice for industrial-grade 25 W CW systems demanding long-term reliability under thermal stress.

Availability

MW7IC2425NBR1 is available at Aetrix Electronics and suitable for industrial microwave heating, medical diathermy, and scientific RF plasma generation requiring stable component supply and traceable sourcing through full production lifecycles.

Supply support for MW7IC2425NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability LDMOS transistors for industrial, medical, and aerospace applications.

The MW7IC2425 series belongs to Freescale's RF Integrated Circuit family, engineered specifically for fixed-frequency 2.45 GHz ISM band amplification with integrated thermal stability and ruggedized operation in harsh environments.

FAQ

What is the maximum safe operating voltage for MW7IC2425NBR1?

The MW7IC2425NBR1 has a maximum drain-source voltage rating of +65 Vdc and an absolute maximum operating voltage (VDD) of +32 Vdc. Operation above 28 Vdc is permitted only under strictly controlled conditions - the typical CW performance data (25 W, 43.8% PAE) is specified at 28 Vdc, and exceeding this voltage requires verification of thermal limits and gate drive stability per AN1955 and AN1987. The MW7IC2425NBR1 must never be operated beyond its 32 Vdc VDD limit.

Does MW7IC2425NBR1 require external matching networks at 2450 MHz?

No, the MW7IC2425NBR1 is internally matched for 50 Ω operation at 2450 MHz in narrowband configurations, as confirmed by Figure 12 source/load impedance data (Zsource = 32 − j6.256 Ω, Zload = 6.2 − j1.17 Ω) and functional test schematics. External matching is unnecessary for basic CW amplification, though fine-tuning may be applied for specific linearity or bandwidth requirements. The MW7IC2425NBR1's internal matching reduces PCB complexity and improves repeatability across production units.

How is thermal management implemented for MW7IC2425NBR1?

The MW7IC2425NBR1 uses an exposed copper backside as the common source terminal, which serves as the primary thermal conduction path to the heatsink. Freescale recommends bolt-down mounting per AN3263 or clamping per AN3789 to achieve the specified RθJC of 1.2°C/W (Stage 2). Thermal resistance increases significantly with improper mounting pressure or interface material - the MW7IC2425NBR1's 225°C junction rating assumes case temperature ≤150°C and proper mechanical attachment verified per application notes.

Can MW7IC2425NBR1 be used in pulsed RF applications?

Yes, the MW7IC2425NBR1 supports pulsed operation, as demonstrated by its WiMAX functional test (2700 MHz, 4 W avg., 9.5 dB PAR, 64-QAM). While optimized for CW, its 10:1 VSWR ruggedness and fast gate response allow use in medium-duty-cycle pulsed systems - however, peak power must remain within 25 W, and pulse width/duty cycle must be validated against thermal limits using the MTTF calculator referenced in Figure 11. The MW7IC2425NBR1's thermal tracking remains active in pulsed mode to stabilize quiescent current between pulses.

What is the purpose of the VGS1 and VGS2 pins on MW7IC2425NBR1?

VGS1 and VGS2 are independent gate bias inputs for Stage 1 and Stage 2, respectively. They enable precise control of each stage's quiescent current (IDQ1 = 55 mA, IDQ2 = 195 mA) and integrate thermal tracking circuitry to maintain stable bias across temperature. These pins accept DC voltage sources (e.g., 2.7 Vdc typical) and support enable/disable functionality - applying 0 V to VGS1 or VGS2 turns off the corresponding stage. The MW7IC2425NBR1's dual-gate architecture allows optimization of gain distribution and efficiency without modifying the RF signal path.