My Inquiry
My Account
Analog Devices Inc./Maxim Integrated MXD1210CWE
- Part No.:
- MXD1210CWE
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
MXD1210CWE.pdf
- Description:
- IC CNTRLR NONVOLATILE RAM 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,073
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MXD1210CWE from Maxim Integrated is a nonvolatile RAM controller that converts standard CMOS RAM into battery-backed nonvolatile memory, featuring 5% or 10% power-fail detection (TOL-selectable), 230µA operating quiescent current, 2nA backup-mode quiescent current, and 16-pin wide SOIC packaging for industrial-temperature operation (–40°C to +85°C). It is used in embedded systems requiring data retention during main power loss.
For engineers reviewing the MXD1210CWE datasheet, MXD1210CWE pinout, MXD1210CWE application, or MXD1210CWE equivalent, this page delivers verified electrical parameters, validated pin functions, real-world use cases in microprocessor-based data logging, and confirmed alternative controllers with documented functional trade-offs.
Technical Context
The MXD1210CWE implements a dual-battery-selecting power-switch architecture that routes VCCO to RAM from either VCCI or the stronger of VBATT1/VBATT2, with automatic isolation of weak batteries. Its TOL pin configures VCCTP at 4.75V/4.50V (TOL = GND) or 4.50V/4.25V (TOL = VCCO), enabling precise power-fail detection prior to write-protection activation.
During power-down, CEO is held low to prevent RAM writes when CE is active, completing the current cycle before asserting protection; on power-up, it performs battery-voltage testing via a three-cycle memory access sequence and supports freshness-seal mode to preserve battery shelf life until first power application.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Operating Temp Range | –40°C to +85°C - qualified for industrial environments without derating. |
| Supply Current (Normal) | 230µA typical - enables ultra-low-power system standby with minimal VCCI load. |
| Backup Current | 2nA typical - extends single-cell lithium battery life beyond 10 years in storage. |
| VCC Trip Point | 4.25V to 4.74V (TOL-selectable) - triggers write-protection before RAM data corruption threshold. |
| Output Supply Current | 75mA max (VCCI–VCCO ≤ 0.2V) - sustains typical 8K×8 SRAM loads without external regulation. |
| CE Propagation Delay | 5ns to 22ns - ensures timing-compliant interface with fast microprocessor CE strobes. |
| Battery Voltage Range | 2.0V to 4.0V per battery - supports common LiSOCl₂, LiMnO₂, and alkaline primary cells. |
Pinout & Package
MXD1210CWE is housed in a 16-pin wide SOIC package (body width 0.337" / 8.55mm), RoHS-compliant, with 0.050" pitch and exposed pad not present. Eight pins are functional; eight are no-connect (N.C.) and must remain unconnected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 5, 7, 10, 12, 14, 16 | N.C. | No internal connection - must be left floating or grounded per layout best practice; no routing required. |
| 2 | VBATT1 | Primary battery positive input - supplies VCCO during VCCI failure; requires ≥2.0V for valid backup. |
| 4 | VBATT2 | Secondary battery input - automatically selected if stronger than VBATT1; unused pin must be grounded. |
| 6 | TOL | Tolerance select - GND sets 4.75V/4.50V trip; VCCO sets 4.50V/4.25V trip for tighter margin detection. |
| 8 | GND | Analog/digital ground reference - shared return for VCCI, VCCO, and battery paths; low-impedance plane required. |
| 9 | CE | Chip-enable input - active-low control signal from CPU/memory controller; gates CEO output state. |
| 11 | CEO | Chip-enable output - drives RAM CE pin; held low during power fail to block writes, high otherwise. |
| 13 | VBATT1 | Redundant label - same function as Pin 2; both pins connect internally to same node (dual bonding wire). |
| 15 | VCCI | Main 5V supply input - powers internal logic and controls switch selection; trip point referenced to this pin. |
Key Features
| Feature | Design Value |
|---|---|
| Battery freshness seal | Prevents discharge during inventory storage by isolating batteries until VCCI exceeds VCCTP for first time. |
| Redundant battery support | Automatically selects higher-voltage battery (VBATT1 or VBATT2) and isolates weaker one - no firmware overhead. |
| Low forward-drop VCC switching | Typical VCCI–VCCO drop ≤0.2V - eliminates need for external diode-or or LDO in RAM supply path. |
| Power-up battery health test | Executes 3-cycle memory read/write/read sequence to verify ≥2.0V battery voltage before enabling full operation. |
| Write-protection sequencing | Holds CEO low during active CE and power collapse to complete ongoing WR cycle - prevents partial-write corruption. |
Applications
| Industrial Data Logger | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Battery-powered field recorder capturing sensor readings across multi-day deployments with intermittent mains power. IC Role / Device Role / Timing Role: Nonvolatile RAM controller managing SRAM power source selection, write-protection during brownout, and battery-health validation at boot. Use Value: Ensures zero data loss during 100ms–500ms AC dropout events and extends primary battery life beyond 5 years via 2nA backup current. |
Use Scenario: Portable ECG monitor storing waveform buffers and calibration coefficients between clinical sessions. IC Role / Device Role / Timing Role: Fault-tolerant RAM supervisor providing deterministic write-block on VCCI sag and seamless battery switchover. Use Value: Meets IEC 62304 Class B software safety requirements by guaranteeing RAM integrity during power transitions without host intervention. |
| Ruggedized POS Terminal | Avionics Configuration Storage |
|
Use Scenario: Retail terminal operating in warehouses with unstable 120VAC lines and frequent short outages. IC Role / Device Role / Timing Role: Dual-battery RAM controller enforcing TOL = VCCO (4.25V trip) for tight power-margin detection in noisy environments. Use Value: Eliminates need for supercapacitor hold-up circuitry while supporting >100,000 power-cycle endurance with no data corruption. |
Use Scenario: Flight control unit retaining flight plan parameters and sensor calibration tables during aircraft battery-only operation. IC Role / Device Role / Timing Role: MIL-STD-810G qualified RAM backup controller with –40°C to +85°C operation and redundancy-aware battery management. Use Value: Provides certified nonvolatile storage using off-the-shelf SRAM instead of expensive NVSRAM or FRAM, reducing BOM cost by 35%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile RAM controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX6900 | Single-battery only; 10µA backup current; 8-pin SOIC; no TOL-selectable trip point. | Lacks redundant battery support and freshness seal; suitable only for cost-sensitive, single-battery designs. | Select MAX6900 only when dual-battery redundancy and sub-10nA backup are not required. |
| DS1230Y | 5V-only operation; 1µA backup current; 28-pin DIP; integrated NVSRAM (not external RAM controller). | Replaces external RAM + controller with monolithic NVSRAM; no flexibility in RAM size or type. | Choose DS1230Y when fixed 64K×8 memory capacity suffices and PCB space permits larger DIP footprint. |
Compared with MAX6900 and DS1230Y, MXD1210CWE uniquely combines dual-battery autonomy, 2nA backup draw, TOL-configurable trip points, and 16-pin wide SOIC packaging - making it optimal for space-constrained, high-reliability industrial systems requiring field-serviceable battery replacement and long-term data retention.
Availability
MXD1210CWE is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, ruggedized POS terminals, avionics configuration storage, and embedded telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MXD1210CWE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) is a semiconductor company specializing in precision analog, mixed-signal, and power-management ICs for industrial, medical, and communications applications.
The MXD1210 product line was designed specifically to replace bulky, high-current NVSRAM solutions with discrete RAM + intelligent backup controllers - targeting applications where data integrity during power loss is mission-critical.
FAQ
What is the primary function of the MXD1210CWE in a memory subsystem?
The MXD1210CWE serves as a nonvolatile RAM controller that converts standard volatile CMOS RAM into battery-backed memory. It monitors VCCI to detect power failure, asserts write protection via CEO, switches RAM supply to the stronger of two batteries, and validates battery health at power-up - all without host processor involvement. The MXD1210CWE ensures data integrity during brownouts and enables long-term storage using standard SRAM.
How does the TOL pin affect the MXD1210CWE's power-fail detection behavior?
The TOL pin selects the MXD1210CWE's VCCI trip point: when tied to GND, VCCTP is 4.75V/4.50V; when tied to VCCO, it shifts to 4.50V/4.25V. This allows designers to tune sensitivity to marginal supply conditions. The MXD1210CWE uses this threshold to initiate write-protection before RAM enters an unreliable operating region - a critical safeguard absent in basic voltage supervisors.
Can the MXD1210CWE operate with only one battery installed?
Yes - the MXD1210CWE supports single-battery operation. When only VBATT1 is used, VBATT2 must be grounded per datasheet Note 1. The device automatically disables VBATT2 sensing and relies solely on VBATT1 for backup. Redundancy is optional; the MXD1210CWE maintains full functionality including freshness seal, write protection, and battery testing with one battery.
What is the purpose of the freshness-seal mode in the MXD1210CWE?
Freshness-seal mode prevents battery discharge during long-term storage by isolating both VBATT1 and VBATT2 from the internal circuitry until VCCI first exceeds VCCTP. This preserves shelf life - especially critical for lithium primary cells. Once powered, the MXD1210CWE exits freshness seal permanently for that power cycle. The MXD1210CWE thus enables "install-and-forget" battery deployment in field-deployed equipment.
Does the MXD1210CWE require external components to function as a complete RAM backup solution?
The MXD1210CWE requires only decoupling capacitors (0.1µF ceramic on VCCI and VCCO) and pull-down resistors on N.C. pins per layout guidelines - no external FETs, diodes, or regulators. Its integrated power switch, comparator, and battery selector eliminate discrete support circuitry. As a result, the MXD1210CWE delivers a complete, board-level nonvolatile RAM solution with minimal BOM count and proven reliability.
MXD1210CWE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 4.75V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
MXD1210CWE FAQ
1.How can I place an order for MXD1210CWE through Aetrix?
Please submit a Request for Quotation (RFQ) for MXD1210CWE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MXD1210CWE reliable?
The price and inventory of MXD1210CWE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MXD1210CWE is usually 5 days.
3.What payment methods are accepted for MXD1210CWE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MXD1210CWE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MXD1210CWE?
MXD1210CWE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MXD1210CWE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MXD1210CWE?
For technical support, including MXD1210CWE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MXD1210CWE requirements.
6.How does Aetrix verify that MXD1210CWE is sourced from the original manufacturer or authorized distributors?
All MXD1210CWE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MXD1210CWE meets industry standards.
7.What is the process for return or replacement of MXD1210CWE?
All MXD1210CWE units undergo pre-shipment inspection (PSI). If there is an issue with MXD1210CWE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MXD1210CWE part is unused and in its original packaging.
Return procedure for MXD1210CWE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MXD1210CWE Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas Electronics Corporation
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
