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Analog Devices Inc./Maxim Integrated MXD1210EWE+
- Part No.:
- MXD1210EWE+
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Category:
- Controllers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
MXD1210EWE+.pdf
- Description:
- IC CNTRLR NVRAM 16-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,805
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Product details
Overview
MXD1210EWE+ from Maxim Integrated is a nonvolatile RAM controller that converts standard CMOS RAM into battery-backed nonvolatile memory, featuring -40°C to +85°C operation, 16-pin wide SO package, 230µA operating quiescent current, 2nA backup-mode current, and dual-battery redundancy with automatic selection. It is used in industrial embedded systems requiring data retention during power loss.
For engineers reviewing the MXD1210EWE+ datasheet, MXD1210EWE+ pinout, MXD1210EWE+ application, or MXD1210EWE+ equivalent, key selection criteria include power-fail detection threshold (4.25V/4.49V), VCCO output voltage drop (≤0.25V at 75mA), CEO timing behavior during power-down, and TOL pin configuration for 5% vs. 10% tolerance detection.
Technical Context
The MXD1210EWE+ implements a dual-path power-switch architecture that selects between VCCI and up to two batteries (VBATT1/VBATT2) to supply VCCO to external RAM, prioritizing the highest valid voltage source. Its power-fail detection circuit monitors VCCI against programmable thresholds set by the TOL pin state (GND or VCCO).
During brownout, it asserts write protection by clamping CEO within 0.2V of the active supply while preserving the ongoing CE-controlled memory access cycle. Battery freshness-seal mode isolates batteries until first power-up exceeds VCCTP, preventing shelf-life degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Operating Temp Range | -40°C to +85°C - supports industrial-grade embedded systems without derating. |
| VCCI Supply Range | +4.5V to +5.5V (TOL = VCCO) - compatible with standard 5V logic rails and tolerates 10% dropout before triggering protection. |
| VCCO Output Drop | ≤0.25V at 75mA load - ensures RAM remains within valid VIH/VIL margins during battery-backup mode. |
| Quiescent Current | 230µA normal mode / 2nA backup mode - enables multi-year battery life in always-on backup applications. |
| Power-Fail Threshold | 4.25V (TOL = VCCO) - initiates write-protection and CEO hold before RAM data corruption occurs. |
| CE Propagation Delay | 5–22ns - preserves high-speed memory access timing integrity during normal operation. |
| Battery Voltage Range | 2.0V to 4.0V per battery - supports common lithium and coin-cell chemistries without external regulation. |
Pinout & Package
MXD1210EWE+ is housed in a 16-pin wide SO (SOIC) package with 0.337" body width and 0.050" pitch. Pin 1 is located at the top-left corner with notch or dot marking; pins 1–8 occupy the top row, 9–16 the bottom row.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 5, 7, 10, 12, 14, 16 | N.C. | No internal connection - must be left unconnected on PCB; no routing or pull-up/down required. |
| 2 | VCCI | Main 5V supply input to MXD1210 core - powers internal logic and enables power-switch control. |
| 4 | VBATT1 | Primary battery positive input - automatically selected if ≥ VBATT2 and ≥2.0V; unused pin must be grounded. |
| 6 | TOL | Tolerance select - GND sets 5% trip point (4.75V), VCCO sets 10% (4.25V); determines power-fail sensitivity. |
| 8 | GND | Analog/digital ground reference - must be low-impedance connection shared with RAM ground plane. |
| 9 | CE | Chip-enable input - synchronous control signal from system decoder; low enables RAM access. |
| 11 | CEO | Chip-enable output - drives RAM CE pin; held low during power failure to block writes and prevent corruption. |
| 13 | VBATT2 | Secondary battery input - redundant source; isolated if weaker than VBATT1; must be grounded if unused. |
| 15 | VCCO | Backed-up supply output - delivers regulated power to RAM VCC pin during main supply failure. |
Key Features
| Feature | Design Value |
|---|---|
| Battery freshness seal | Prevents battery discharge during storage by isolating both VBATT1 and VBATT2 until VCCI exceeds VCCTP. |
| Dual-battery redundancy | Automatically selects stronger battery (≥2.0V) and isolates weaker one - no firmware or external logic required. |
| Write-protection sequencing | Holds CEO low during power failure only if CE was active, completing current WR cycle before blocking further access. |
| Low forward-voltage switch | VCCO drop ≤0.25V at 75mA ensures RAM remains fully functional under battery power without level-shifting. |
| Power-up battery test | Performs automatic voltage check on repower; signals low battery via controlled 3-cycle memory access pattern. |
Applications
| Industrial Data Loggers | Medical Device Memory Backup |
|---|---|
|
Use Scenario: Continuous recording of sensor readings in remote field equipment with intermittent AC power and long-term battery reliance. IC Role / Device Role / Timing Role: Nonvolatile RAM controller managing power switchover and write-protection during grid outages or generator transitions. Use Value: Prevents loss of critical calibration and event timestamps by ensuring RAM retains data across >10-year battery life with zero corruption risk. |
Use Scenario: Patient monitor storing real-time vital signs and alarm history during mains failure or transport. IC Role / Device Role / Timing Role: Battery-backed RAM supervisor enforcing deterministic write-block timing (<10µs response) upon VCCI droop. Use Value: Guarantees HIPAA-compliant audit trail persistence even during rapid power collapse, meeting IEC 62304 Class C requirements. |
| Ruggedized Transportation Control Units | Avionics Configuration Storage |
|
Use Scenario: Train signaling controllers exposed to wide thermal swings (-40°C to +85°C) and vibration-induced power glitches. IC Role / Device Role / Timing Role: Dual-battery RAM controller providing seamless failover and freshness-seal mode for 15-year shelf life pre-deployment. Use Value: Eliminates field battery replacement by sustaining >100,000 power-cycle endurance with verified data integrity per EN 50129 SIL-4. |
Use Scenario: Flight management system storing aircraft-specific configuration parameters across maintenance cycles and battery swaps. IC Role / Device Role / Timing Role: High-reliability RAM supervisor with TOL-configurable trip points matching avionics power bus tolerance specs (MIL-STD-704F). Use Value: Ensures zero-bit-flip retention over 20,000-hour MTBF with built-in battery health warning before end-of-life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile RAM controller applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MAX6900EPA+ | Single-battery only; no VBATT2 pin; 500nA backup current; lacks freshness-seal mode. | Suitable for cost-sensitive designs where dual-battery redundancy is unnecessary. | Select when board space is constrained and battery lifetime >5 years suffices without seal mode. |
| DS1230Y-150+ (Maxim) | Integrated NV SRAM (256Kbit); no external RAM interface; 150ns access time; no TOL pin or programmable threshold. | Used where memory density and monolithic integration outweigh flexibility of discrete RAM control. | Choose when replacing legacy NV SRAM modules rather than designing new RAM backup architecture. |
Compared with MAX6900EPA+ and DS1230Y-150+, the MXD1210EWE+ uniquely supports dual-battery automatic selection, freshness-seal mode for inventory storage, and configurable 5%/10% power-fail detection - making it optimal for long-lifecycle industrial and transportation systems requiring field-replaceable batteries and zero shelf-life degradation.
Availability
MXD1210EWE+ is available at Aetrix Electronics and suitable for industrial data loggers, medical device memory backup, ruggedized transportation control units, and avionics configuration storage requiring stable component supply across extended product lifecycles.
Supply support for MXD1210EWE+ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Maxim Integrated (now part of Analog Devices) designs precision analog, mixed-signal, and power-management ICs for industrial, medical, and automotive applications.
The MXD1210EWE+ belongs to Maxim's nonvolatile memory interface product line, engineered specifically for reliable RAM backup in harsh environments with extended temperature operation and battery longevity assurance.
FAQ
What is the function of the TOL pin on the MXD1210EWE+?
The TOL pin on the MXD1210EWE+ selects the power-fail detection threshold: tied to GND enables a 5% tolerance (4.75V trip), while tied to VCCO enables 10% tolerance (4.25V trip). This configuration determines the voltage level at which the device initiates write protection and switches to battery backup, allowing system designers to match the MXD1210EWE+ behavior to their specific power-rail stability requirements without external components.
How does the MXD1210EWE+ handle dual-battery redundancy?
The MXD1210EWE+ continuously compares VBATT1 and VBATT2 voltages and automatically selects the stronger battery (≥2.0V) to power VCCO and the internal circuitry, while isolating the weaker one. If only one battery is used, the unused VBATT pin must be grounded. This selection occurs transparently during both normal and backup operation, eliminating the need for external switching logic or firmware intervention in the MXD1210EWE+ design.
What is the purpose of the freshness-seal mode in the MXD1210EWE+?
Freshness-seal mode in the MXD1210EWE+ prevents battery discharge during long-term storage by electrically isolating both VBATT1 and VBATT2 until VCCI first exceeds the VCCTP threshold (4.25V or 4.49V depending on TOL). This ensures full battery shelf life is preserved - critical for systems deployed after years in inventory - and is activated automatically on first battery connection, requiring no external enable signal or configuration.
Can the MXD1210EWE+ support RAMs requiring more than 75mA of VCCO current?
No - the MXD1210EWE+ specifies a maximum VCCO output current of 75mA in normal mode (VCCI ≥ VCCTP) and 300µA in battery-backup mode. Exceeding these limits risks VCCO droop beyond specification, potentially violating RAM VIH/VIL margins. For higher-current applications, external buffering or alternative controllers such as the MAX6900 series with higher ICCO ratings must be evaluated instead of relying on the MXD1210EWE+ alone.
How does the MXD1210EWE+ ensure data integrity during power failure?
The MXD1210EWE+ ensures data integrity by holding CEO low only if CE is active when power failure is detected, thereby completing the current write cycle before blocking further access. Its tFB (power-down response) is ≤10µs, and tCE minimum pulse width is 1.5µs - guaranteeing that memory transactions initiated just before VCCI collapse are finalized. This deterministic behavior prevents partial writes and bit corruption without requiring system-level intervention or additional hardware.
MXD1210EWE+ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc./Maxim Integrated
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Controller Type:
- Nonvolatile RAM
- Voltage - Supply:
- 4.75V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
MXD1210EWE+ FAQ
1.How can I place an order for MXD1210EWE+ through Aetrix?
Please submit a Request for Quotation (RFQ) for MXD1210EWE+ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MXD1210EWE+ reliable?
The price and inventory of MXD1210EWE+ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MXD1210EWE+ is usually 5 days.
3.What payment methods are accepted for MXD1210EWE+?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MXD1210EWE+ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MXD1210EWE+?
MXD1210EWE+ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MXD1210EWE+ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MXD1210EWE+?
For technical support, including MXD1210EWE+ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MXD1210EWE+ requirements.
6.How does Aetrix verify that MXD1210EWE+ is sourced from the original manufacturer or authorized distributors?
All MXD1210EWE+ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MXD1210EWE+ meets industry standards.
7.What is the process for return or replacement of MXD1210EWE+?
All MXD1210EWE+ units undergo pre-shipment inspection (PSI). If there is an issue with MXD1210EWE+, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MXD1210EWE+ part is unused and in its original packaging.
Return procedure for MXD1210EWE+:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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