STMicroelectronics NAND01GW3A0AN6E
- Part No.:
- NAND01GW3A0AN6E
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
NAND01GW3A0AN6E.pdf
- Description:
- IC FLASH 1GBIT PARALLEL 48TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:1,125
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Product details
Overview
NAND01GW3A0AN6E from STMicroelectronics is a 1 Gbit, x8-bus-width NAND Flash memory with 2112-byte pages (2048 + 64 spare), 128K-byte blocks (128K + 4K spare), and 1.8V supply operation (VDD = 1.7–1.95 V). It features Cache Read/Program modes, Copy Back Program, hardware block locking, and open-drain Ready/Busy output - deployed in portable media players, embedded storage modules, and industrial data loggers.
For engineers reviewing the NAND01GW3A0AN6E datasheet, NAND01GW3A0AN6E pinout, NAND01GW3A0AN6E application, or NAND01GW3A0AN6E equivalent, key selection criteria include page size compatibility, 25 µs random read access, 50 ns sequential read timing, 300 µs typical page program time, and TSOP48 package footprint alignment with legacy NAND controllers.
Technical Context
This device implements a multiplexed x8 I/O bus with AL, CL, WE, RE, CE, WP, and RB control signals, enabling address/data sharing to minimize pin count while supporting density migration. Its internal architecture includes a Page Buffer for standard operations and a separate Cache Register for overlapping data transfer and programming/reading - critical for sustained throughput in file-system-based storage.
The NAND controller logic supports full command-set compliance (Read, Program, Erase, Copy Back, Status Read, Electronic Signature), with hardware-assisted data protection via Block Lock/Unlock and Write Protect pin assertion. All operations are governed by a status register (SR0–SR7) reporting error, busy, cache ready, and write-protect states - essential for robust firmware-level error handling and wear leveling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 Gbit (128 MByte main array + 4 MByte spare area) |
| Bus Width | x8 interface with multiplexed I/O0–I/O7 for address/data |
| Page Size | 2112 bytes (2048 data + 64 spare) - defines ECC sector granularity and firmware page buffer sizing |
| Block Size | 132 Kbytes (128K main + 4K spare) - determines erase granularity and bad-block management unit |
| Random Read Access | 25 µs max - sets minimum latency for random file access in FAT/exFAT implementations |
| Sequential Read Speed | 50 ns min cycle time - enables >16 MB/s sustained read throughput with proper controller timing |
| Page Program Time | 300 µs typical - impacts write latency for small-file logging and journaling operations |
| Block Erase Time | 2 ms typical - defines background garbage collection overhead in managed NAND systems |
Pinout & Package
Package: TSOP48 (12 × 20 mm, 0.5 mm pitch), lead-free ECOPACK® compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O0–I/O7 | Multiplexed Data/Address Bus | Carries command, address, and data bytes under AL/CL/WE/RE control - requires external latch coordination |
| AL | Address Latch Enable | Strobes lower-order address bits into internal latch during address phase |
| CL | Command Latch Enable | Strobes command byte (e.g., 00h, 80h, 60h) into command register |
| WE | Write Enable | Active-low strobe for writing commands, addresses, or data; controls internal write timing |
| RE | Read Enable | Active-low strobe for reading status, data, or electronic signature; gates output drivers |
| CE | Chip Enable | Active-low chip select; "don't care" during latency allows uninterrupted reads during CE toggling |
| WP | Write Protect | Hardware lock: low = program/erase disabled; used for boot-sector protection |
| RB | Ready/Busy | Open-drain output indicating P/E/R controller activity - shared across multiple chips via pull-up |
| VDD | Supply Voltage | 1.7–1.95 V for reliable 1.8V operation; tight tolerance required for stable ECC and timing margins |
| VSS | Ground | Reference for all I/O and internal logic; requires low-impedance PCB return path |
Key Features
| Feature | Design Value |
|---|---|
| Cache Read Mode | Overlaps data loading into Cache Register with I/O buffer output - reduces effective read latency by ~30% for multi-page transfers |
| Cache Program Mode | Loads next page into Cache Register while current page programs - improves sequential write throughput by eliminating inter-page dead time |
| Copy Back Program | Transfers valid page data within flash array without host involvement - accelerates bad-block remapping and reduces system-level data buffering requirements |
| Hardware Block Locking | Per-block software-lockable via command sequence; prevents accidental erase/program of firmware or configuration sectors |
| Electronic Signature | Fixed 4-byte manufacturer/device ID (0x00, 0x2C, 0x14, 0x00) readable at power-up - enables automatic part identification in multi-vendor BOMs |
| Chip Enable 'Don't Care' | CE transitions ignored during internal latency - eliminates need for CE hold timing in microcontroller-driven polling loops |
Applications
| Portable Media Player Storage | Industrial Data Logger |
|---|---|
Use Scenario: Stores audio/video files and firmware in battery-powered handheld devices with limited PCB space and thermal budget. IC Role / Device Role / Timing Role: Primary non-volatile mass storage device interfaced to ARM9 or MIPS-based SoC via NAND controller peripheral. Use Value: TSOP48 footprint ensures drop-in replacement for legacy NAND; 1.8V operation reduces power consumption vs. 3V alternatives, extending battery life. | Use Scenario: Captures sensor readings (temperature, pressure, vibration) at 100 Hz for 30 days in unattended remote installations. IC Role / Device Role / Timing Role: Cyclic write buffer with wear-leveling-aware firmware; uses Copy Back and Cache Program to sustain 2 MB/s write bursts. Use Value: 100,000 P/E cycles and 10-year data retention guarantee field-deployed reliability; hardware block locking secures calibration tables against corruption. |
| Embedded Automotive Infotainment | Medical Diagnostic Device Storage |
Use Scenario: Holds map databases, UI assets, and OTA update partitions in automotive head units operating across -40°C to +85°C ambient. IC Role / Device Role / Timing Role: Boot-critical storage mapped to XIP-capable controller; relies on electronic signature and status register for secure initialization. Use Value: ECOPACK® TSOP48 meets automotive RoHS/ELV requirements; 25 µs random read enables responsive GUI navigation without DRAM caching. | Use Scenario: Stores patient ECG waveforms, diagnostic reports, and audit logs in Class II medical equipment requiring traceable data integrity. IC Role / Device Role / Timing Role: Secure storage partition with hardware write protection enabled during acquisition; status register monitored for ECC failure detection. Use Value: Spare area allocation (64 bytes/page) supports BCH-8 or RS-based ECC implementation per JEDEC JESD22-A119; serial number option (NDA) enables device-level traceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4 | 1 Gbit x8, 3.3V-only supply (2.7–3.6 V), 35 µs random read, no Cache Read mode | Requires level-shifting for 1.8V systems; lacks cache acceleration for high-throughput streaming | Select when 3.3V system integration simplifies power design and throughput demands are moderate |
| TC58NVG0S3ETA00 | 1 Gbit x8, 1.8V supply, 25 µs random read, but uses 48-pin TSOP-I (non-ECOPACK) and lacks Copy Back Program | No native bad-block copy optimization; requires external buffer management in firmware | Select when legacy TSOP-I footprint compatibility is mandatory and ECC/Bad Block handling is fully handled in host SW |
Compared with MT29F1G08ABAEAH4 and TC58NVG0S3ETA00, NAND01GW3A0AN6E uniquely combines 1.8V operation, Cache Read/Program, and Copy Back in an ECOPACK® TSOP48 - delivering superior power efficiency, sustained throughput, and firmware simplicity for resource-constrained embedded systems.
Availability
NAND01GW3A0AN6E is available at Aetrix Electronics and suitable for portable media players, industrial data loggers, automotive infotainment systems, and medical diagnostic devices requiring stable component supply across extended product lifecycles.
Supply support for NAND01GW3A0AN6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.
NAND01GW3A0AN6E belongs to the NAND01G-B family - engineered specifically for cost-sensitive, high-reliability embedded storage where low-voltage operation, long endurance, and standardized NAND command compatibility are critical.
FAQ
What is the meaning of the 'W' in NAND01GW3A0AN6E?
The 'W' denotes 1.8V operation (as opposed to 'R' for 3.0V). This is confirmed in ST's ordering scheme documentation: 'W' = 1.7–1.95 V VDD range, enabling lower power consumption and compatibility with modern low-voltage SoCs. The '3A' suffix indicates TSOP48 package with ECOPACK® lead-free finish, and 'N6E' specifies industrial temperature grade (–40°C to +85°C).
Does NAND01GW3A0AN6E support on-die ECC?
No - NAND01GW3A0AN6E does not include on-die ECC logic. It relies on external controller or host processor to implement BCH or Reed-Solomon correction using the 64-byte spare area per 2048-byte page. ST provides reference ECC algorithms and hardware simulation models, but error correction must be implemented in system firmware or ASIC logic.
Can the Unique Identifier (serial number) feature be enabled on this part?
Yes - the serial number option is physically implemented and available on NAND01GW3A0AN6E, but activation requires a Non-Disclosure Agreement (NDA) with STMicroelectronics and custom ordering through authorized channels. The feature is not enabled by default and is not accessible via standard command sequences described in the public datasheet.
How is the Ready/Busy (RB) signal intended to be used in system design?
RB is an open-drain output that asserts low during internal Program/Erase/Read operations and releases high when complete. It can be wire-OR'd with other NAND devices using a single pull-up resistor, simplifying multi-chip control. Firmware should poll RB (or use interrupt) before issuing new commands - especially critical before Read Status Register or subsequent Page Read operations.
NAND01GW3A0AN6E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 30ns
- Access Time:
- 30 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
NAND01GW3A0AN6E FAQ
1.How can I place an order for NAND01GW3A0AN6E through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND01GW3A0AN6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND01GW3A0AN6E reliable?
The price and inventory of NAND01GW3A0AN6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND01GW3A0AN6E is usually 5 days.
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NAND01GW3A0AN6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NAND01GW3A0AN6E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND01GW3A0AN6E?
For technical support, including NAND01GW3A0AN6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND01GW3A0AN6E requirements.
6.How does Aetrix verify that NAND01GW3A0AN6E is sourced from the original manufacturer or authorized distributors?
All NAND01GW3A0AN6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND01GW3A0AN6E meets industry standards.
7.What is the process for return or replacement of NAND01GW3A0AN6E?
All NAND01GW3A0AN6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND01GW3A0AN6E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND01GW3A0AN6E part is unused and in its original packaging.
Return procedure for NAND01GW3A0AN6E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND01GW3A0AN6E Tags

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