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STMicroelectronics NAND01GW3A0AN6E

Part No.:
NAND01GW3A0AN6E
Manufacturer:
STMicroelectronics
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixNAND01GW3A0AN6E.pdf
Description:
IC FLASH 1GBIT PARALLEL 48TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,125

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Product details

Overview

NAND01GW3A0AN6E from STMicroelectronics is a 1 Gbit, x8-bus-width NAND Flash memory with 2112-byte pages (2048 + 64 spare), 128K-byte blocks (128K + 4K spare), and 1.8V supply operation (VDD = 1.7–1.95 V). It features Cache Read/Program modes, Copy Back Program, hardware block locking, and open-drain Ready/Busy output - deployed in portable media players, embedded storage modules, and industrial data loggers.

For engineers reviewing the NAND01GW3A0AN6E datasheet, NAND01GW3A0AN6E pinout, NAND01GW3A0AN6E application, or NAND01GW3A0AN6E equivalent, key selection criteria include page size compatibility, 25 µs random read access, 50 ns sequential read timing, 300 µs typical page program time, and TSOP48 package footprint alignment with legacy NAND controllers.

Technical Context

This device implements a multiplexed x8 I/O bus with AL, CL, WE, RE, CE, WP, and RB control signals, enabling address/data sharing to minimize pin count while supporting density migration. Its internal architecture includes a Page Buffer for standard operations and a separate Cache Register for overlapping data transfer and programming/reading - critical for sustained throughput in file-system-based storage.

The NAND controller logic supports full command-set compliance (Read, Program, Erase, Copy Back, Status Read, Electronic Signature), with hardware-assisted data protection via Block Lock/Unlock and Write Protect pin assertion. All operations are governed by a status register (SR0–SR7) reporting error, busy, cache ready, and write-protect states - essential for robust firmware-level error handling and wear leveling.

Key Specifications

ParameterValue and Actual Design Meaning
Density1 Gbit (128 MByte main array + 4 MByte spare area)
Bus Widthx8 interface with multiplexed I/O0–I/O7 for address/data
Page Size2112 bytes (2048 data + 64 spare) - defines ECC sector granularity and firmware page buffer sizing
Block Size132 Kbytes (128K main + 4K spare) - determines erase granularity and bad-block management unit
Random Read Access25 µs max - sets minimum latency for random file access in FAT/exFAT implementations
Sequential Read Speed50 ns min cycle time - enables >16 MB/s sustained read throughput with proper controller timing
Page Program Time300 µs typical - impacts write latency for small-file logging and journaling operations
Block Erase Time2 ms typical - defines background garbage collection overhead in managed NAND systems

Pinout & Package

Package: TSOP48 (12 × 20 mm, 0.5 mm pitch), lead-free ECOPACK® compliant.

Pin/TerminalCircuit RoleDesign Meaning
I/O0–I/O7Multiplexed Data/Address BusCarries command, address, and data bytes under AL/CL/WE/RE control - requires external latch coordination
ALAddress Latch EnableStrobes lower-order address bits into internal latch during address phase
CLCommand Latch EnableStrobes command byte (e.g., 00h, 80h, 60h) into command register
WEWrite EnableActive-low strobe for writing commands, addresses, or data; controls internal write timing
RERead EnableActive-low strobe for reading status, data, or electronic signature; gates output drivers
CEChip EnableActive-low chip select; "don't care" during latency allows uninterrupted reads during CE toggling
WPWrite ProtectHardware lock: low = program/erase disabled; used for boot-sector protection
RBReady/BusyOpen-drain output indicating P/E/R controller activity - shared across multiple chips via pull-up
VDDSupply Voltage1.7–1.95 V for reliable 1.8V operation; tight tolerance required for stable ECC and timing margins
VSSGroundReference for all I/O and internal logic; requires low-impedance PCB return path

Key Features

FeatureDesign Value
Cache Read ModeOverlaps data loading into Cache Register with I/O buffer output - reduces effective read latency by ~30% for multi-page transfers
Cache Program ModeLoads next page into Cache Register while current page programs - improves sequential write throughput by eliminating inter-page dead time
Copy Back ProgramTransfers valid page data within flash array without host involvement - accelerates bad-block remapping and reduces system-level data buffering requirements
Hardware Block LockingPer-block software-lockable via command sequence; prevents accidental erase/program of firmware or configuration sectors
Electronic SignatureFixed 4-byte manufacturer/device ID (0x00, 0x2C, 0x14, 0x00) readable at power-up - enables automatic part identification in multi-vendor BOMs
Chip Enable 'Don't Care'CE transitions ignored during internal latency - eliminates need for CE hold timing in microcontroller-driven polling loops

Applications

Portable Media Player StorageIndustrial Data Logger

Use Scenario: Stores audio/video files and firmware in battery-powered handheld devices with limited PCB space and thermal budget.

IC Role / Device Role / Timing Role: Primary non-volatile mass storage device interfaced to ARM9 or MIPS-based SoC via NAND controller peripheral.

Use Value: TSOP48 footprint ensures drop-in replacement for legacy NAND; 1.8V operation reduces power consumption vs. 3V alternatives, extending battery life.

Use Scenario: Captures sensor readings (temperature, pressure, vibration) at 100 Hz for 30 days in unattended remote installations.

IC Role / Device Role / Timing Role: Cyclic write buffer with wear-leveling-aware firmware; uses Copy Back and Cache Program to sustain 2 MB/s write bursts.

Use Value: 100,000 P/E cycles and 10-year data retention guarantee field-deployed reliability; hardware block locking secures calibration tables against corruption.

Embedded Automotive InfotainmentMedical Diagnostic Device Storage

Use Scenario: Holds map databases, UI assets, and OTA update partitions in automotive head units operating across -40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Boot-critical storage mapped to XIP-capable controller; relies on electronic signature and status register for secure initialization.

Use Value: ECOPACK® TSOP48 meets automotive RoHS/ELV requirements; 25 µs random read enables responsive GUI navigation without DRAM caching.

Use Scenario: Stores patient ECG waveforms, diagnostic reports, and audit logs in Class II medical equipment requiring traceable data integrity.

IC Role / Device Role / Timing Role: Secure storage partition with hardware write protection enabled during acquisition; status register monitored for ECC failure detection.

Use Value: Spare area allocation (64 bytes/page) supports BCH-8 or RS-based ECC implementation per JEDEC JESD22-A119; serial number option (NDA) enables device-level traceability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT29F1G08ABAEAH41 Gbit x8, 3.3V-only supply (2.7–3.6 V), 35 µs random read, no Cache Read modeRequires level-shifting for 1.8V systems; lacks cache acceleration for high-throughput streamingSelect when 3.3V system integration simplifies power design and throughput demands are moderate
TC58NVG0S3ETA001 Gbit x8, 1.8V supply, 25 µs random read, but uses 48-pin TSOP-I (non-ECOPACK) and lacks Copy Back ProgramNo native bad-block copy optimization; requires external buffer management in firmwareSelect when legacy TSOP-I footprint compatibility is mandatory and ECC/Bad Block handling is fully handled in host SW

Compared with MT29F1G08ABAEAH4 and TC58NVG0S3ETA00, NAND01GW3A0AN6E uniquely combines 1.8V operation, Cache Read/Program, and Copy Back in an ECOPACK® TSOP48 - delivering superior power efficiency, sustained throughput, and firmware simplicity for resource-constrained embedded systems.

Availability

NAND01GW3A0AN6E is available at Aetrix Electronics and suitable for portable media players, industrial data loggers, automotive infotainment systems, and medical diagnostic devices requiring stable component supply across extended product lifecycles.

Supply support for NAND01GW3A0AN6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.

NAND01GW3A0AN6E belongs to the NAND01G-B family - engineered specifically for cost-sensitive, high-reliability embedded storage where low-voltage operation, long endurance, and standardized NAND command compatibility are critical.

FAQ

What is the meaning of the 'W' in NAND01GW3A0AN6E?

The 'W' denotes 1.8V operation (as opposed to 'R' for 3.0V). This is confirmed in ST's ordering scheme documentation: 'W' = 1.7–1.95 V VDD range, enabling lower power consumption and compatibility with modern low-voltage SoCs. The '3A' suffix indicates TSOP48 package with ECOPACK® lead-free finish, and 'N6E' specifies industrial temperature grade (–40°C to +85°C).

Does NAND01GW3A0AN6E support on-die ECC?

No - NAND01GW3A0AN6E does not include on-die ECC logic. It relies on external controller or host processor to implement BCH or Reed-Solomon correction using the 64-byte spare area per 2048-byte page. ST provides reference ECC algorithms and hardware simulation models, but error correction must be implemented in system firmware or ASIC logic.

Can the Unique Identifier (serial number) feature be enabled on this part?

Yes - the serial number option is physically implemented and available on NAND01GW3A0AN6E, but activation requires a Non-Disclosure Agreement (NDA) with STMicroelectronics and custom ordering through authorized channels. The feature is not enabled by default and is not accessible via standard command sequences described in the public datasheet.

How is the Ready/Busy (RB) signal intended to be used in system design?

RB is an open-drain output that asserts low during internal Program/Erase/Read operations and releases high when complete. It can be wire-OR'd with other NAND devices using a single pull-up resistor, simplifying multi-chip control. Firmware should poll RB (or use interrupt) before issuing new commands - especially critical before Read Status Register or subsequent Page Read operations.

NAND01GW3A0AN6E Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NAND
Memory Size:
1Gbit
Memory Organization:
128M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
30ns
Access Time:
30 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP

NAND01GW3A0AN6E FAQ

1.How can I place an order for NAND01GW3A0AN6E through Aetrix?

Please submit a Request for Quotation (RFQ) for NAND01GW3A0AN6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NAND01GW3A0AN6E reliable?

The price and inventory of NAND01GW3A0AN6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND01GW3A0AN6E is usually 5 days.

3.What payment methods are accepted for NAND01GW3A0AN6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND01GW3A0AN6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NAND01GW3A0AN6E?

NAND01GW3A0AN6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NAND01GW3A0AN6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NAND01GW3A0AN6E?

For technical support, including NAND01GW3A0AN6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND01GW3A0AN6E requirements.

6.How does Aetrix verify that NAND01GW3A0AN6E is sourced from the original manufacturer or authorized distributors?

All NAND01GW3A0AN6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND01GW3A0AN6E meets industry standards.

7.What is the process for return or replacement of NAND01GW3A0AN6E?

All NAND01GW3A0AN6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND01GW3A0AN6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NAND01GW3A0AN6E part is unused and in its original packaging.

Return procedure for NAND01GW3A0AN6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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