STMicroelectronics NAND01GW3B2AN6F

Overview

NAND01GW3B2AN6F from Numonyx is a 1-Gbit, x8-configuration NAND flash memory with 2112-byte pages (2048 + 64 spare), 128K+4K-byte blocks, and 3.0 V operation (2.7–3.6 V). It delivers 25 µs max random access, 30 ns min sequential access, and 200 µs typical page program time. Designed for embedded mass storage in portable electronics, industrial controllers, and firmware update modules where high-density non-volatile storage with hardware write protection is required.

For engineers reviewing the NAND01GW3B2AN6F datasheet, NAND01GW3B2AN6F pinout, NAND01GW3B2AN6F application, or NAND01GW3B2AN6F equivalent, key selection considerations include its TSOP48 package compatibility, open-drain Ready/Busy signaling, cache read/program acceleration, hardware block locking, and ECC-supported 100,000 P/E cycles per block.

Technical Context

This device implements a multiplexed x8 I/O bus with shared address/data lines controlled by AL (Address Latch Enable) and CL (Command Latch Enable), enabling footprint scalability across density variants. Its P/E/R controller manages internal timing, status reporting via an open-drain RB pin, and supports copy-back programming to avoid data retransmission during defective-block relocation.

The memory array is organized into 1024 blocks of 64 pages each, with dedicated spare areas for metadata and ECC. Hardware data protection includes chip-enable "don't care" during latency, WP-pin-driven lock during power transitions, and status register bits (SR0–SR7) indicating error, readiness, and write-protection states.

Key Specifications

Pinout & Package

Package: TSOP48 (12 × 20 mm, plastic thin small outline), RoHS-compliant ECOPACK®.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Compared with MT29F1G08ABAEAH4 and TC58NVG1S3ETA00, NAND01GW3B2AN6F provides measurable throughput gains via cache read/program and simplifies firmware design with integrated copy-back-reducing host CPU load and improving field reliability in constrained embedded systems.

Availability

NAND01GW3B2AN6F is available at Aetrix Electronics and suitable for firmware storage modules, industrial data loggers, consumer portable media players, and automotive infotainment caches requiring stable component supply, long-lifecycle support, and RoHS-compliant TSOP packaging.

Supply support for NAND01GW3B2AN6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Numonyx was a fabless semiconductor company formed in 2008 through the merger of Intel's NOR flash division and STMicroelectronics' NOR/NAND business, later acquired by Micron in 2010. It specialized in non-volatile memory solutions for embedded and mobile markets.

NAND01GW3B2AN6F belongs to the NAND01G-B2B family, engineered for cost-effective, high-reliability mass storage in resource-constrained embedded systems-emphasizing hardware-assisted data integrity, power-resilient protection, and scalable density migration.

FAQ

What voltage range does NAND01GW3B2AN6F support, and how does it affect system design?

NAND01GW3B2AN6F operates from 2.7 V to 3.6 V, with typical 3.0 V supply. This wide range accommodates Li-ion battery discharge curves and regulator tolerances without requiring tight voltage regulation. The device maintains full AC/DC specifications across the range, eliminating need for voltage scaling logic or dual-supply interfaces in portable designs.

How does the "chip enable don't care" feature improve system responsiveness?

The chip enable "don't care" feature allows CE transitions during internal latency periods (e.g., after command latch) without aborting ongoing operations. This enables microcontrollers to issue back-to-back commands without waiting for CE deassertion, reducing software overhead and improving real-time predictability in interrupt-driven firmware.

Is ECC mandatory, and what level is required for reliable operation?

Yes-ECC is mandatory for reliable operation. The datasheet specifies 100,000 P/E cycles "with ECC", implying use of at least 4-bit correction per 512-byte sector (e.g., BCH-4). Without ECC, bit errors accumulate rapidly after ~1,000 cycles. Aetrix recommends integrating hardware BCH engines or proven software ECC libraries aligned with the device's spare-area layout (64 bytes/page).

Can NAND01GW3B2AN6F be used in automotive applications, and what qualifications apply?

NAND01GW3B2AN6F itself is not AEC-Q100 qualified, but its TSOP48 package, 3.0 V operation, and hardware write protection make it suitable for under-hood-adjacent infotainment subsystems when paired with external thermal derating and voltage monitoring. For full automotive qualification, refer to Micron's post-acquisition equivalents (e.g., MT29F1G08ABBDAH4) with Grade 3 certification.