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STMicroelectronics NAND01GW3B2AZA6E
- Part No.:
- NAND01GW3B2AZA6E
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 63-TFBGA
- Datasheet:
-
NAND01GW3B2AZA6E.pdf
- Description:
- IC FLASH 1GBIT PARALLEL 63VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,535
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Product details
Overview
NAND01GW3B2AZA6E from Numonyx is a 1-Gbit, x8-organization NAND flash memory operating at 2.7–3.6 V supply, featuring 2112-byte pages (2048 + 64 spare), 132-Kbyte blocks (128 K + 4 K spare), and TSOP48 packaging. It delivers 30 ns sequential read access, 200 µs typical page program time, and supports hardware write protection, cache read/program, and copy-back programming - deployed in embedded storage modules requiring high-density, low-voltage nonvolatile memory.
For engineers reviewing the NAND01GW3B2AZA6E datasheet, NAND01GW3B2AZA6E pinout, NAND01GW3B2AZA6E application, or NAND01GW3B2AZA6E equivalent, key selection criteria include bus width (x8), voltage range (2.7–3.6 V), TSOP48 mechanical compatibility, ECC-required endurance (100,000 P/E cycles), and support for cache-enhanced throughput in boot code or firmware storage systems.
Technical Context
This device implements a multiplexed x8 I/O interface with shared address/data lines controlled by AL (Address Latch Enable) and CL (Command Latch Enable), enabling footprint scalability across density variants. Its open-drain RB (Ready/Busy) output signals P/E/R controller activity and supports wired-OR connection of multiple devices.
The architecture includes a dedicated page buffer, cache register for pipelined data transfer, and status register (SR0–SR7) reporting error, protection, and operation completion states. Hardware block locking and chip-enable "don't care" behavior ensure robust operation during power transitions and microcontroller code download.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 Gbit (128 Mbytes) usable memory array |
| Bus Width | x8 - single-byte data path with multiplexed address/data on I/O0–I/O7 |
| Page Size | 2112 bytes (2048 main + 64 spare) - enables ECC-based error correction per page |
| Block Size | 132 Kbytes (128 K main + 4 K spare) - minimum erasable unit for wear leveling |
| Read Access | 30 ns min sequential access - critical for streaming firmware or media playback |
| Program Time | 200 µs typical page program - defines write latency for log or configuration updates |
| Erase Time | 2 ms typical block erase - impacts garbage collection overhead in FTL implementations |
| Endurance | 100,000 program/erase cycles per block (with ECC) - requires host-side wear-leveling |
Pinout & Package
Package: TSOP48 (12 × 20 mm, plastic thin small outline), lead-free and RoHS-compliant per ECOPACK® specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O0–I/O7 | Multiplexed data/address/command bus | Shared x8 path for all operations; AL/CL control function mode |
| AL | Address Latch Enable | Strobes address bits into internal register during command/address phase |
| CL | Command Latch Enable | Strobes command byte (e.g., 00h, 80h, 30h) into command register |
| E | Chip Enable | Active-low device select; "don't care" during latency allows uninterrupted reads |
| R | Read Enable | Controls data output timing and latching on I/O pins |
| W | Write Enable | Controls data input timing and internal command/address loading |
| WP | Write Protect | Hardware lock disabling program/erase when asserted (low) |
| RB | Ready/Busy (open-drain) | Signals P/E/R controller busy state; supports multi-device wired-OR |
| VDD | Supply Voltage | 2.7–3.6 V - powers core logic and high-voltage generator |
| VSS | Ground | Reference return for all I/O and internal circuitry |
Key Features
| Feature | Design Value |
|---|---|
| Cache Read Mode | Overlaps data transfer from page buffer to I/O with next page load - reduces effective read latency for sequential access |
| Cache Program Mode | Loads new data into cache register while prior data programs into array - improves sustained write throughput |
| Copy-Back Program | Transfers data between pages without external controller involvement - accelerates bad-block remapping in FTL |
| Hardware Block Locking | Prevents accidental program/erase of protected blocks via WP pin and status register control - enhances firmware integrity |
| Serial Number Option | Factory-programmed unique identifier (NDA-restricted) - enables device traceability and secure provisioning |
| ECOPACK® Packaging | Lead-free, halogen-free TSOP48 compliant with environmental regulations - suitable for industrial and consumer production |
Applications
| Industrial Data Logger | Automotive Infotainment Boot Storage |
|---|---|
Use Scenario: Continuous sensor data logging with periodic power cycling and long-term retention requirements. IC Role / Device Role / Timing Role: Nonvolatile storage for timestamped telemetry; retains data for ≥10 years without refresh. Use Value: Hardware write protection prevents corruption during brown-out events; 100K-cycle endurance supports daily logging over 27 years (with wear leveling). | Use Scenario: Storing boot firmware and OS kernel images in head-unit systems requiring fast cold-start performance. IC Role / Device Role / Timing Role: Primary boot medium accessed via NAND controller; 30 ns sequential read enables rapid image decompression. Use Value: Cache read mode reduces boot time by overlapping page loads; TSOP48 footprint ensures mechanical compatibility with legacy automotive PCB layouts. |
| Medical Diagnostic Device Firmware | Network Router Configuration Archive |
Use Scenario: Secure storage of FDA-cleared firmware updates and calibration tables in portable ultrasound equipment. IC Role / Device Role / Timing Role: Trusted firmware repository with hardware-level write lock during operation. Use Value: WP pin + SR7 status bit enforce immutable firmware execution; serial number option supports regulatory device serialization. | Use Scenario: Persistent backup of router configuration, certificates, and routing tables across power failures and firmware upgrades. IC Role / Device Role / Timing Role: High-reliability configuration store with copy-back capability for seamless failover. Use Value: Copy-back program enables atomic config updates without host RAM buffering; 2 ms block erase minimizes service interruption during save operations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4 | 1 Gbit x8, 3.3 V only, 48-pin TSOP, 25 µs random access, no cache read | Lacks cache read/program and copy-back modes - lower throughput in sequential workloads | Select when cost sensitivity outweighs performance needs and ECC handling is fully managed externally |
| TC58NVG1S3ETA00 | 1 Gbit x8, 2.7–3.6 V, 48-pin TSOP, 25 µs random access, supports cache read but not copy-back | Missing copy-back command - increases FTL complexity for bad-block management | Choose for designs already using Toshiba NAND toolchains and where copy-back is not required |
Compared with MT29F1G08ABAEAH4 and TC58NVG1S3ETA00, NAND01GW3B2AZA6E uniquely combines cache-enhanced throughput, copy-back remapping, and dual-voltage operation in a drop-in TSOP48 package - reducing host controller overhead and improving field reliability in resource-constrained embedded systems.
Availability
NAND01GW3B2AZA6E is available at Aetrix Electronics and suitable for industrial data loggers, automotive infotainment systems, and medical diagnostic devices requiring stable component supply, long-lifecycle support, and RoHS-compliant TSOP packaging.
Supply support for NAND01GW3B2AZA6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Numonyx was a fabless semiconductor company formed in 2008 through the merger of Intel's NOR flash division and STMicroelectronics' NOR/NAND business, focused on nonvolatile memory solutions for embedded and computing markets.
NAND01GW3B2AZA6E belongs to the NAND01G-B2B family - designed specifically for cost-sensitive, high-reliability embedded storage applications requiring 1.8 V/3 V flexibility, ECC-ready endurance, and standardized TSOP footprints.
FAQ
What is the maximum operating temperature range for NAND01GW3B2AZA6E?
The device is specified for industrial temperature operation from –40 °C to +85 °C, validated per DC and AC parameters in Table 20 of the datasheet. This range supports deployment in automotive cabin modules, factory-floor controllers, and outdoor networking equipment without derating.
Does NAND01GW3B2AZA6E require an external pull-up resistor on the RB pin?
Yes - the RB pin is open-drain and requires an external pull-up resistor (typically 4.7 kΩ to VDD) to generate a valid logic-high signal. Figure 32 in the datasheet specifies the load circuit, and Figure 33 provides timing vs. resistor value guidance for reliable ready/busy detection.
How is the spare area used in the 2112-byte page structure?
The 64-byte spare area stores ECC parity bits (typically 12–16 bytes), logical-to-physical block mapping metadata, wear-leveling counters, and bad-block markers. Host firmware or NAND controller must manage this region explicitly - it is not accessible via standard read commands without status register configuration.
Is the serial number option enabled by default on NAND01GW3B2AZA6E?
No - the unique serial number feature is factory-programmable under NDA and disabled by default. Activation requires coordination with Numonyx (now Micron) sales and integration of proprietary read commands (not defined in public datasheets); it is not available on standard production lots.
NAND01GW3B2AZA6E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 63-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 30ns
- Access Time:
- 30 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 63-VFBGA (9x11)
NAND01GW3B2AZA6E FAQ
1.How can I place an order for NAND01GW3B2AZA6E through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND01GW3B2AZA6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND01GW3B2AZA6E reliable?
The price and inventory of NAND01GW3B2AZA6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND01GW3B2AZA6E is usually 5 days.
3.What payment methods are accepted for NAND01GW3B2AZA6E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND01GW3B2AZA6E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NAND01GW3B2AZA6E?
NAND01GW3B2AZA6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NAND01GW3B2AZA6E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND01GW3B2AZA6E?
For technical support, including NAND01GW3B2AZA6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND01GW3B2AZA6E requirements.
6.How does Aetrix verify that NAND01GW3B2AZA6E is sourced from the original manufacturer or authorized distributors?
All NAND01GW3B2AZA6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND01GW3B2AZA6E meets industry standards.
7.What is the process for return or replacement of NAND01GW3B2AZA6E?
All NAND01GW3B2AZA6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND01GW3B2AZA6E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND01GW3B2AZA6E part is unused and in its original packaging.
Return procedure for NAND01GW3B2AZA6E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND01GW3B2AZA6E Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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