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STMicroelectronics NAND128W3A0AN6
- Part No.:
- NAND128W3A0AN6
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
NAND128W3A0AN6.pdf
- Description:
- IC FLASH 128MBIT PARALLEL 48TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,522
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Product details
Overview
NAND128W3A0AN6 from STMicroelectronics is a 128 Mbit (16 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading and features hardware write protection via WP pin. Used in embedded storage modules requiring reliable, low-voltage non-volatile memory.
For engineers reviewing the NAND128W3A0AN6 datasheet, NAND128W3A0AN6 pinout, NAND128W3A0AN6 application, or NAND128W3A0AN6 equivalent, key selection criteria include 1.8V operation, TSOP48 footprint compatibility, Page 0 auto-read boot capability, and support for Copy Back programming to manage bad blocks without external buffering.
Technical Context
This device implements a standard NAND interface with multiplexed I/O0–I/O7 for address/data transfer, AL/CL control signals, and open-drain RB output for P/E/R controller status monitoring. Its architecture supports sequential and random access modes with 50 ns min sequential read timing and 12 µs max random access latency.
The memory array is organized into 1,024 blocks of 32 pages each (32,768 pages total), with built-in electronic signature and status register (SR0–SR7) for error detection, write protection, and operation completion reporting. Chip Enable 'Don't Care' mode simplifies microcontroller interfacing by eliminating CE assertion timing constraints during command/address/data cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mbit (16 MB) usable capacity with x8 bus interface |
| Supply Voltage | 1.8V nominal (1.7–1.95V range); enables low-power portable and battery-operated designs |
| Page Size | 528 bytes (512 data + 16 spare); spare area stores ECC metadata and block management info |
| Block Size | 16,384 bytes (16 KB) + 512-byte spare; defines minimum erase granularity and wear-leveling unit |
| Page Program Time | 200 µs typical; determines write throughput in page-aligned firmware updates |
| Block Erase Time | 2 ms typical; enables fast reconfiguration of storage partitions during field upgrades |
| Data Retention | 10 years at 25°C; ensures long-term reliability in industrial logging and firmware storage |
| Endurance | 100,000 program/erase cycles per block; requires wear-leveling algorithm implementation in host controller |
Pinout & Package
Package: TSOP48 (12 × 20 mm, 0.5 mm pitch), JEDEC-standard thin small-outline plastic package compatible with automated SMT assembly and legacy PCB footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O0–I/O7 | Multiplexed Data/Address Bus | Carries command, address, and data bytes sequentially; reduces pin count vs parallel interface |
| AL (Address Latch Enable) | Address Capture Control | Latches column/row address bits during address phase; synchronizes with CL for command decoding |
| CL (Command Latch Enable) | Command Capture Control | Latches command codes (e.g., 00h, 30h, 60h) to initiate read/write/erase operations |
| E (Chip Enable) | Device Selection | Active-low enable; supports 'Don't Care' mode to simplify timing when interfacing with slow microcontrollers |
| R (Read Enable) | Read Strobe | Controls data output timing during read cycles; used with RB signal to avoid bus contention |
| W (Write Enable) | Write Strobe | Validates data/command/address writes on rising edge; coordinates with AL/CL for cycle sequencing |
| WP (Write Protect) | Hardware Lock | Prevents accidental program/erase during power transitions; active-low, tied high for normal operation |
| RB (Ready/Busy) | Open-Drain Status Output | Signals P/E/R controller activity; allows wired-OR connection of multiple NAND devices to single MCU interrupt line |
| VDD | Power Supply | 1.8V core supply (1.7–1.95V); decoupling required near pin to suppress switching noise |
| VSS | Ground Reference | Digital ground return path; must be low-impedance and separated from analog/power grounds |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Page 0 Read at Power-Up | Enables boot code execution directly from NAND without external ROM or initialization firmware |
| Copy Back Program Mode | Permits intra-device page relocation without host-side data buffering-reduces system RAM overhead during bad-block remapping |
| Chip Enable 'Don't Care' Option | Eliminates strict CE timing requirements during command/address/data phases-simplifies glueless interface with 8-bit MCUs |
| Hardware Write Protection | Physically blocks program/erase during power ramp-up/down-prevents corruption during brown-out conditions |
| Electronic Signature & Status Register | Allows runtime identification and real-time monitoring of write-protection state, P/E/R progress, and error flags (SR0) |
Applications
| Embedded Boot Storage | Industrial Data Logger |
|---|---|
Use Scenario: Storing bootloader and firmware images in resource-constrained microcontroller systems with no external NOR Flash. IC Role / Device Role / Timing Role: Primary non-volatile boot medium accessed at power-on reset; leverages automatic Page 0 read to load initial instruction stream. Use Value: Eliminates need for separate boot ROM, reducing BOM cost and PCB area while supporting field-upgradable firmware. |
Use Scenario: Capturing sensor readings and event timestamps in remote environmental monitoring nodes operating on battery power. IC Role / Device Role / Timing Role: High-endurance data sink with wear-leveling support; uses 100K-cycle endurance and 10-year retention for long-deployment reliability. Use Value: Enables multi-year unattended operation without data loss, even under frequent write cycles and temperature variation. |
| Consumer Media Player | Automotive Infotainment Cache |
Use Scenario: Storing compressed audio/video assets and UI assets in portable MP3/MP4 players with limited board space. IC Role / Device Role / Timing Role: Mass storage buffer interfaced via 8-bit MCU with minimal GPIO; relies on TSOP48 footprint for compact layout. Use Value: Provides cost-effective, high-density storage in ultra-thin form factors where BGA packaging is impractical. |
Use Scenario: Caching navigation map tiles and voice prompt audio in automotive head units requiring AEC-Q100 alignment (via system-level qualification). IC Role / Device Role / Timing Role: Secondary storage element supporting fast sequential reads (50 ns) for real-time UI rendering and audio streaming. Use Value: Delivers responsive user experience with low-latency access to cached content, reducing reliance on slower SD card interfaces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F128G08CFAAAWP-IT | 128 Gbit density, 3.3V supply, 2048+64 byte page, VFBGA63 package | Targeted at high-capacity SSDs and enterprise storage-not pin-compatible or voltage-compatible | Select only when scaling beyond 128 Mbit and migrating to 3.3V ecosystem with BGA assembly capability |
| TC58NVG0S3ETA00 | 1 Gbit density, 1.8V supply, 2048+64 byte page, TSOP48 package, ONFI 2.3 compliant | Supports faster interface protocols and larger page sizes-requires updated host driver stack | Choose for higher density and future-proofing if host controller supports ONFI timing and ECC expansion |
Compared with MT29F128G08CFAAAWP-IT and TC58NVG0S3ETA00, NAND128W3A0AN6 offers optimal balance of legacy TSOP48 compatibility, 1.8V low-power operation, and proven integration in boot-critical embedded systems-without requiring protocol stack upgrades or voltage rail changes.
Availability
NAND128W3A0AN6 is available at Aetrix Electronics and suitable for embedded boot storage, industrial data loggers, consumer media players, and automotive infotainment cache applications requiring stable component supply across extended product lifecycles.
Supply support for NAND128W3A0AN6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader specializing in microcontrollers, power management, and non-volatile memory solutions for industrial, automotive, and consumer markets.
This part belongs to the NAND128-A family of cost-optimized, low-voltage NAND Flash memories designed specifically for mass-storage applications in space-constrained embedded systems requiring boot-from-NAND capability and robust data integrity.
FAQ
Does NAND128W3A0AN6 support x16 bus width?
No. NAND128W3A0AN6 is an x8 device with I/O0–I/O7 pins only. The 'W' in the part number denotes 1.8V operation and TSOP48 package; x16 variants use different suffixes (e.g., 'R') and have distinct pinouts and timing specifications.
What is the function of the AL and CL pins?
AL (Address Latch Enable) captures row/column address bits during address input phases, while CL (Command Latch Enable) latches command opcodes (e.g., 00h for read, 60h for erase). Both are essential for proper command decoding and memory addressing in the multiplexed NAND interface.
Can the Ready/Busy (RB) pin drive multiple NAND devices?
Yes. RB is an open-drain output, allowing multiple NAND128W3A0AN6 devices to share a single pull-up resistor and MCU interrupt line. This enables efficient status polling across stacked or parallel NAND configurations without additional logic.
Is Error Correction Code (ECC) implemented internally?
No. NAND128W3A0AN6 does not include on-die ECC. Host controller must implement external BCH or Hamming ECC-minimum 1-bit correction per 512-byte sector is required to meet the 100,000-cycle endurance specification and ensure data integrity over lifetime.
NAND128W3A0AN6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 128Mbit
- Memory Organization:
- 16M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 50ns
- Access Time:
- 50 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
NAND128W3A0AN6 FAQ
1.How can I place an order for NAND128W3A0AN6 through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND128W3A0AN6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND128W3A0AN6 reliable?
The price and inventory of NAND128W3A0AN6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND128W3A0AN6 is usually 5 days.
3.What payment methods are accepted for NAND128W3A0AN6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND128W3A0AN6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NAND128W3A0AN6?
NAND128W3A0AN6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NAND128W3A0AN6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND128W3A0AN6?
For technical support, including NAND128W3A0AN6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND128W3A0AN6 requirements.
6.How does Aetrix verify that NAND128W3A0AN6 is sourced from the original manufacturer or authorized distributors?
All NAND128W3A0AN6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND128W3A0AN6 meets industry standards.
7.What is the process for return or replacement of NAND128W3A0AN6?
All NAND128W3A0AN6 units undergo pre-shipment inspection (PSI). If there is an issue with NAND128W3A0AN6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND128W3A0AN6 part is unused and in its original packaging.
Return procedure for NAND128W3A0AN6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND128W3A0AN6 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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