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STMicroelectronics NAND128W3A0AN6E

Name: NAND128W3A0AN6E
Brand: STMicroelectronics
SKU: NAND128W3A0AN6E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NAND128W3A0AN6E

Manufacturer:: STMicroelectronics

Category:: Memory

Package:: 48-TFSOP (0.724", 18.40mm Width)

Datasheet:: NAND128W3A0AN6E.pdf

Description:: IC FLASH 128MBIT PARALLEL 48TSOP

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Product details

Overview

NAND128W3A0AN6E from STMicroelectronics is a 128 Mbit (16 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading and features hardware write protection via WP pin. Used in embedded storage subsystems requiring reliable mass storage with low-voltage operation.

For engineers reviewing the NAND128W3A0AN6E datasheet, NAND128W3A0AN6E pinout, NAND128W3A0AN6E application, or NAND128W3A0AN6E equivalent, key selection criteria include 1.8V VDD range (1.7–1.95V), 100,000 P/E cycles, 10-year data retention, open-drain Ready/Busy signaling, and support for Copy Back Program mode to reduce host-side buffering overhead in wear-leveling firmware.

Technical Context

This device implements a standard NAND interface with multiplexed I/O[7:0] for address/data/command transfer, AL/CL/W/R/E control signals, and dedicated WP and RB pins. Its internal architecture includes a 128 Mbit array organized as 1,024 blocks × 32 pages/block × 528 bytes/page, with spare area used for ECC metadata and bad block markers.

It operates in two primary modes: standard command execution (e.g., Read ID, Read Status, Page Read, Page Program, Block Erase) and enhanced operations including Copy Back Program and Automatic Page 0 Read at power-up - both enabled via configuration bits in the status register and supported by on-chip logic without external timing control.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	128 Mbit (16 MB) total capacity, sufficient for firmware images and log storage in resource-constrained embedded systems.
Interface Bus Width	x8 parallel interface with multiplexed I/O[7:0], reducing pin count and enabling footprint compatibility across density variants.
Page Size	528 bytes (512 data + 16 spare), where spare bytes store ECC syndromes and metadata required for error correction and bad block management.
Block Size	16,384 bytes (16 KB) per block, including 512-byte spare area; defines minimum erase granularity and wear-leveling unit.
Supply Voltage	VDD = 1.7 V to 1.95 V; enables integration into 1.8V core logic domains without level-shifting circuitry.
Endurance	100,000 program/erase cycles per block; mandates use of wear-leveling algorithms in host controller firmware.
Data Retention	10 years at 25°C; ensures long-term reliability for archival and infrequently updated storage applications.

Pinout & Package

TSOP48 (12 × 20 mm) package with 48 leads, JEDEC-compliant thin small-outline plastic construction. Pin 1 marked by notch or dot; lead finish is matte tin.

Pin/Terminal	Circuit Role	Design Meaning
I/O[7:0]	Multiplexed Data/Address/Command	Shared bus for all transfers; requires AL/CL/W/R strobes to decode function during each cycle.
AL	Address Latch Enable	Strobe indicating valid column/row address on I/O bus; latches address into internal registers.
CL	Command Latch Enable	Strobe indicating valid command byte (e.g., 0x00, 0x30) on I/O bus; initiates internal command decode.
E	Chip Enable	Active-low chip select; supports "don't care" mode for simplified microcontroller interfacing without glue logic.
R	Read Enable	Active-low strobe enabling output drivers for sequential or random data reads from cache register.
W	Write Enable	Active-low strobe controlling input sampling on I/O bus during command/address/data writes.
WP	Write Protect	Hardware lock preventing accidental program/erase; active-low, asserted during power transitions for automatic protection.
RB	Ready/Busy	Open-drain output signaling internal P/E/R controller activity; shared across multiple devices via single pull-up resistor.

Key Features

Feature	Design Value
Automatic Page 0 Read at Power-Up	Enables boot-from-NAND capability without host intervention; critical for standalone microcontroller-based bootloaders.
Copy Back Program Mode	Allows intra-device page-to-page data relocation without host retransmission, reducing firmware complexity in bad-block remapping.
Chip Enable 'Don't Care' Option	Permits E pin to float or remain unconnected during normal operation, simplifying PCB layout and MCU GPIO usage.
Hardware Data Protection	Automatic lockout of program/erase during VDD ramp-up/down, eliminating need for external power-monitoring circuits.
Spare Area Architecture	16-byte spare per 512-byte page reserved for ECC, logical-to-physical mapping, and bad block flags - essential for robust file system implementation.

Applications

Smart Card OS Storage

Industrial HMI Firmware

Use Scenario: Storing Java Card applets and cryptographic keys in tamper-resistant smart cards with limited power budget.

IC Role / Device Role / Timing Role: Non-volatile code and data storage with fast random access to applet headers and secure key tables.

Use Value: 1.8V operation matches smart card ISO/IEC 7816-3 voltage profiles; 100K endurance supports frequent OTA updates over lifecycle.

Use Scenario: Holding GUI assets, calibration data, and firmware binaries in panel-mounted human-machine interface terminals.

IC Role / Device Role / Timing Role: Primary boot and update storage, accessed via ARM Cortex-M SPI NAND controller or bit-banged GPIO interface.

Use Value: TSOP48 package allows direct soldering onto compact industrial PCBs; automatic Page 0 read enables zero-delay bootloader initialization.

Medical Diagnostic Log Buffer

Automotive Telematics Black Box

Use Scenario: Capturing time-stamped sensor diagnostics and fault records in portable ultrasound or ECG units.

IC Role / Device Role / Timing Role: Cyclic logging buffer with wear-leveling managed by host MCU; spare area stores timestamp and CRC metadata.

Use Value: 10-year data retention ensures compliance with medical device record-keeping regulations; hardware WP prevents corruption during battery swaps.

Use Scenario: Recording vehicle CAN bus events, GPS coordinates, and crash-triggered snapshots in telematics control units.

IC Role / Device Role / Timing Role: High-reliability event recorder using Copy Back Program to relocate data around failing blocks without interrupting capture.

Use Value: Open-drain RB signal synchronizes logging with microcontroller DMA transfers; 2ms block erase enables rapid overwrite of oldest segments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT29F128G08CBACAWP	128 Gbit (16 GB), 3.3V-only, ONFI 3.2 interface, 20 nm process	Targeted at high-throughput SSD controllers, not microcontroller-booted embedded systems	Select only if migrating to modern high-density NAND with ONFI timing and external ECC engine.
TC58NVG2S3ETA00	1 Gbit (128 MB), 3.3V, x8, TSOP48, Toshiba-compatible pinout and command set	Higher density with identical interface; requires updated driver for larger block/page counts	Preferred upgrade path when board space permits and firmware supports extended addressing.

Compared with MT29F128G08CBACAWP and TC58NVG2S3ETA00, NAND128W3A0AN6E offers optimal balance of 1.8V compatibility, proven TSOP48 footprint, and minimal host firmware overhead - making it ideal for cost-sensitive, low-power embedded boot storage where legacy NAND support is required.

Availability

NAND128W3A0AN6E is available at Aetrix Electronics and suitable for industrial HMI firmware, medical diagnostic log buffers, automotive telematics black boxes, and smart card OS storage requiring stable component supply across multi-year production cycles.

Supply support for NAND128W3A0AN6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in microcontrollers, power management, sensors, and non-volatile memory solutions for industrial, automotive, and consumer markets.

This part belongs to the NAND128-A family of 1.8V/3V NAND Flash memories designed specifically for embedded boot code storage and firmware update storage in space- and power-constrained applications.

FAQ

Does NAND128W3A0AN6E support x16 bus width?

No. NAND128W3A0AN6E is an x8 device with 8-bit I/O bus width. The 'W' in the part number denotes 1.8V operation and x8 interface; x16 variants use 'R' suffix (e.g., NAND128R3A). Pinout and command protocol differ between x8 and x16 versions, and they are not interchangeable.

What is the purpose of the spare area in each page?

The 16-byte spare area per 528-byte page stores ECC parity data, logical block mapping information, bad block markers, and wear-leveling counters. It is mandatory for implementing robust error correction and flash translation layer (FTL) firmware - raw access without spare handling will result in uncorrectable data errors.

Can the Ready/Busy (RB) pin be directly connected to a microcontroller GPIO?

Yes, but only with an external pull-up resistor (typically 10 kΩ) to VDD. RB is open-drain and must not be driven high externally. It asserts low during internal program/erase/read operations and releases high when idle; polling this signal avoids fixed-time delays and improves system responsiveness.

Is Automatic Page 0 Read enabled by default?

No. Automatic Page 0 Read at power-up is disabled by default and must be enabled via the "Auto Read Enable" bit (bit 2) in the Configuration Register, written using the SET FEATURES command (0xEF). Once enabled, it persists across power cycles until explicitly disabled.

NAND128W3A0AN6E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 48-TFSOP (0.724", 18.40mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NAND

Memory Size:: 128Mbit

Memory Organization:: 16M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 50ns

Access Time:: 50 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TSOP

NAND128W3A0AN6E FAQ

1.How can I place an order for NAND128W3A0AN6E through Aetrix?

Please submit a Request for Quotation (RFQ) for NAND128W3A0AN6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NAND128W3A0AN6E reliable?

The price and inventory of NAND128W3A0AN6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND128W3A0AN6E is usually 5 days.

3.What payment methods are accepted for NAND128W3A0AN6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND128W3A0AN6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NAND128W3A0AN6E?

NAND128W3A0AN6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NAND128W3A0AN6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NAND128W3A0AN6E?

For technical support, including NAND128W3A0AN6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND128W3A0AN6E requirements.

6.How does Aetrix verify that NAND128W3A0AN6E is sourced from the original manufacturer or authorized distributors?

All NAND128W3A0AN6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND128W3A0AN6E meets industry standards.

7.What is the process for return or replacement of NAND128W3A0AN6E?

All NAND128W3A0AN6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND128W3A0AN6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NAND128W3A0AN6E part is unused and in its original packaging.

Return procedure for NAND128W3A0AN6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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