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STMicroelectronics NAND256W3A0AN6

Name: NAND256W3A0AN6
Brand: STMicroelectronics
SKU: NAND256W3A0AN6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NAND256W3A0AN6

Manufacturer:: STMicroelectronics

Category:: Memory

Package:: 48-TFSOP (0.724", 18.40mm Width)

Datasheet:: NAND256W3A0AN6.pdf

Description:: IC FLASH 256MBIT PARALLEL 48TSOP

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Product details

Overview

NAND256W3A0AN6 from STMicroelectronics is a 256 Mbit (32 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading and features hardware write protection via WP pin. Used in embedded storage modules requiring high-density, low-voltage non-volatile memory.

For engineers reviewing the NAND256W3A0AN6 datasheet, NAND256W3A0AN6 pinout, NAND256W3A0AN6 application, or NAND256W3A0AN6 equivalent, key selection criteria include 1.8V operation, TSOP48 footprint compatibility across NAND density families, Page 0 auto-read boot capability, and support for Copy Back programming to manage bad blocks without external buffering.

Technical Context

This device implements a standard NAND interface with multiplexed I/O[7:0] for address/data/command transfer, using AL, CL, WE, RE, CE, and RB signals to control sequential and random access operations. Its internal P/E/R controller manages page program (200 µs typ), block erase (2 ms typ), and status register polling (SR0 error bit, SR6 busy flag).

The memory array is organized as 2048 blocks × 64 pages/block × 528 bytes/page, with dedicated spare area per page for ECC metadata and wear-leveling tracking. Chip Enable 'Don't Care' mode simplifies microcontroller interfacing by allowing CE to be held inactive during command/address/data phases when not required.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	256 Mbit (32 MB) total capacity, sufficient for firmware images and log storage in resource-constrained systems.
Bus Width	x8 configuration - uses I/O[7:0] for all address/data/command transfers, reducing PCB trace count vs. x16.
Page Size	528 bytes (512 data + 16 spare) - spare area stores ECC syndromes and logical-to-physical mapping metadata.
Block Size	16,384 bytes (16 KB) + 512-byte spare - defines minimum erasable unit; impacts wear-leveling granularity.
Supply Voltage	VDD = 1.7–1.95 V - enables direct integration with 1.8V core logic, eliminating level-shifting in portable designs.
Page Program Time	200 µs typical - determines sustained write throughput; requires host-side timing compliance per command sequence.
Block Erase Time	2 ms typical - sets minimum latency for block reclamation; critical for garbage collection efficiency.
Data Retention	10 years at 25°C - guarantees long-term integrity of stored boot code or calibration data without refresh.

Pinout & Package

TSOP48 (12 × 20 mm), 48-pin plastic thin small outline package with standard JEDEC pinout for x8 NAND Flash devices. Compatible with automated SMT assembly and socket-based development platforms.

Pin/Terminal	Circuit Role	Design Meaning
I/O[7:0]	Multiplexed Data/Address/Command Bus	Shared lines for all transfers - reduces pin count; requires AL/CL strobes to latch address/command vs. data.
CE#	Chip Enable	Active-low chip select; supports 'Don't Care' mode to simplify microcontroller GPIO usage during non-access cycles.
RE#	Read Enable	Controls data output timing; used with RB# to synchronize host reads from internal register or array.
WE#	Write Enable	Strobes command/address/data into internal registers; must meet tWP (12 ns min) for reliable latching.
CL#	Command Latch Enable	Latches command byte (e.g., 0x00, 0x30) on rising edge; initiates internal state machine transitions.
AL#	Address Latch Enable	Latches column/row address bytes; enables 5-byte addressing for full 256 Mbit space in x8 mode.
RB#	Ready/Busy Output	Open-drain signal indicating P/E/R controller activity; allows wired-OR connection of multiple NAND devices.
WP#	Write Protect Input	Hardware lock preventing accidental program/erase; active-low, asserted during power transitions for data integrity.

Key Features

Feature	Design Value
Automatic Page 0 Read at Power-Up	Enables boot-from-NAND without external initialization code - critical for standalone microcontroller startup.
Copy Back Program Mode	Permits intra-device page relocation without host data retransmission - reduces bus traffic and improves bad-block recovery speed.
Hardware Write Protection	WP# pin disables all program/erase commands during voltage ramp-up/down - prevents corruption during brown-out conditions.
Chip Enable 'Don't Care' Option	Allows CE# to float or remain deasserted during command/address/data phases - simplifies glueless MCU interface design.
Electronic Signature Read	Provides manufacturer ID (0x20), device ID (0xDA), and extended ID - enables runtime device identification and firmware compatibility checks.

Applications

Industrial HMI Storage

Medical Device Firmware

Use Scenario: Storing GUI assets, configuration profiles, and audit logs in panel-mounted HMIs with limited board space.

IC Role / Device Role / Timing Role: Non-volatile code and data storage with Page 0 auto-read enabling immediate UI rendering post-power-on.

Use Value: Eliminates external boot ROM; TSOP48 footprint allows drop-in replacement across 128/256/512 Mbit densities during product scaling.

Use Scenario: Holding FDA-compliant firmware images and patient calibration records in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Secure, long-retention storage with hardware WP# ensuring regulatory-required write-lock during battery swaps.

Use Value: 10-year data retention meets medical device shelf-life requirements; Copy Back mode maintains data integrity during field updates.

Automotive Telematics Log

Smart Meter Firmware

Use Scenario: Capturing CAN bus diagnostics, GPS traces, and crash-event snapshots in vehicle telematics units.

IC Role / Device Role / Timing Role: High-endurance logging medium supporting 100,000 P/E cycles - essential for frequent overwrites in event buffers.

Use Value: Block-level erase (2 ms typ) enables rapid log rotation; spare area accommodates ECC for robustness against EMI-induced bit flips.

Use Scenario: Hosting metrology firmware and tariff tables in ANSI C12.22-compliant smart electricity meters.

IC Role / Device Role / Timing Role: Boot-critical storage with automatic Page 0 fetch ensuring deterministic startup after grid interruptions.

Use Value: 1.8V operation aligns with ultra-low-power meter SoCs; TSOP48 thermal profile supports conformal coating for outdoor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT29F2G08ABAEAH4	2 Gbit (x8), 48-pin TSOP, 3.3V supply only; no Page 0 auto-read or CE 'Don't Care' mode.	Requires level-shifting for 1.8V hosts; lacks boot-from-NAND support - needs external bootloader.	Select when higher density and faster 25 ns read access are prioritized over low-voltage operation and boot simplicity.
TC58NVG2S3ETA00	2 Gbit (x8), 48-pin TSOP, 1.8V supply; includes internal ECC engine but no Copy Back mode.	Reduces host CPU ECC overhead but increases complexity for bad-block remapping due to lack of intra-die copy.	Prefer when system-level ECC acceleration is needed and firmware can handle full-page rewrites instead of Copy Back optimization.

Compared with MT29F2G08ABAEAH4 and TC58NVG2S3ETA00, NAND256W3A0AN6 offers optimal balance for cost-sensitive, low-power boot storage: its 1.8V TSOP48 form factor, Page 0 auto-read, and Copy Back mode reduce BOM count and firmware complexity - unlike the higher-density alternatives that trade boot simplicity for capacity or add ECC silicon overhead.

Availability

NAND256W3A0AN6 is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, and automotive telematics log applications requiring stable component supply and long-term manufacturability.

Supply support for NAND256W3A0AN6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader specializing in microcontrollers, power management, and non-volatile memory solutions for industrial, automotive, and consumer markets.

NAND256W3A0AN6 belongs to ST's legacy NAND Flash family designed for cost-effective, high-reliability embedded storage - targeting applications where boot-from-flash, low-voltage operation, and pin-compatible scalability across densities are essential.

FAQ

Does NAND256W3A0AN6 support x16 bus width?

No. NAND256W3A0AN6 is strictly an x8 device, using I/O[7:0] for all data, address, and command transfers. The part number suffix "W" denotes x8 configuration; x16 variants in this family use "R" (e.g., NAND256R3A). Pinout and timing parameters are optimized for x8 operation only.

What is the purpose of the spare area in each 528-byte page?

The 16-byte spare area per page stores ECC parity data, logical block addressing metadata, and bad-block markers. It is mandatory for implementing industry-standard BCH or Hamming ECC algorithms and enables wear-leveling controllers to track physical block health without consuming main array space.

Can the Ready/Busy (RB#) pin drive multiple NAND devices?

Yes. RB# is an open-drain output, allowing multiple NAND256W3A0AN6 devices to share a single pull-up resistor and microcontroller interrupt line. This simplifies multi-chip storage designs and enables efficient polling of concurrent operations across parallel NAND channels.

Is the 'Chip Enable Don't Care' feature enabled by default?

Yes. The CE# 'Don't Care' option is a hardware-configured mode activated via internal fuse settings at manufacture - no external configuration is required. It permits CE# to remain deasserted during command, address, and data phases, reducing GPIO usage in microcontroller interfaces.

NAND256W3A0AN6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 48-TFSOP (0.724", 18.40mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NAND

Memory Size:: 256Mbit

Memory Organization:: 32M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 50ns

Access Time:: 50 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TSOP

NAND256W3A0AN6 FAQ

1.How can I place an order for NAND256W3A0AN6 through Aetrix?

Please submit a Request for Quotation (RFQ) for NAND256W3A0AN6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NAND256W3A0AN6 reliable?

The price and inventory of NAND256W3A0AN6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND256W3A0AN6 is usually 5 days.

3.What payment methods are accepted for NAND256W3A0AN6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND256W3A0AN6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NAND256W3A0AN6?

NAND256W3A0AN6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NAND256W3A0AN6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NAND256W3A0AN6?

For technical support, including NAND256W3A0AN6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND256W3A0AN6 requirements.

6.How does Aetrix verify that NAND256W3A0AN6 is sourced from the original manufacturer or authorized distributors?

All NAND256W3A0AN6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND256W3A0AN6 meets industry standards.

7.What is the process for return or replacement of NAND256W3A0AN6?

All NAND256W3A0AN6 units undergo pre-shipment inspection (PSI). If there is an issue with NAND256W3A0AN6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NAND256W3A0AN6 part is unused and in its original packaging.

Return procedure for NAND256W3A0AN6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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