STMicroelectronics NAND256W3A0AN6F

Overview

NAND256W3A0AN6F from STMicroelectronics is a 256 Mbit (32 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading and features hardware write protection via WP pin. Used in embedded storage subsystems requiring high-density non-volatile memory with wear leveling support.

For engineers reviewing the NAND256W3A0AN6F datasheet, NAND256W3A0AN6F pinout, NAND256W3A0AN6F application, or NAND256W3A0AN6F equivalent, key selection criteria include 1.8V operation, TSOP48 footprint compatibility across density variants, Page 0 auto-read capability for boot firmware, and integrated Ready/Busy open-drain signaling for multi-chip status monitoring.

Technical Context

This device implements a standard NAND interface with multiplexed I/O0–I/O7 for address/data transfer, AL/CL control signals, and dedicated command execution via CE#, RE#, WE#, and WP pins. Its architecture supports sequential and random page access with 12 µs max random read latency and 50 ns min sequential access time.

The internal P/E/R controller manages block erase (2 ms typ), page program (200 µs typ), and copy-back operations without external buffering. Status register bits (SR0–SR7) provide real-time feedback on error, busy state, and write protection status - critical for host-level ECC and bad-block management firmware.

Key Specifications

Pinout & Package

TSOP48 package (12 × 20 mm), 0.5 mm pitch, JEDEC MO-142 compliant. Pinout validated per Figure 4 (x8 devices) in preliminary datasheet Rev. July 2004.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with MT29F2G08ABAEAH4 and TC58NVG2S3ETA00, NAND256W3A0AN6F offers unique boot-critical features (Page 0 auto-read, CE# don't-care) in a mature 1.8V TSOP48 form factor - making it optimal for cost-sensitive, legacy-compatible embedded systems where firmware simplicity and footprint reuse are prioritized over raw capacity.

Availability

NAND256W3A0AN6F is available at Aetrix Electronics and suitable for mobile handset firmware storage, industrial HMI data logging, and set-top box media buffering requiring stable component supply across long-lifecycle production runs.

Supply support for NAND256W3A0AN6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in microcontrollers, power ICs, sensors, and non-volatile memory solutions for automotive, industrial, and consumer markets.

This part belongs to the NAND128-A/NAND256-A/NAND512-A/NAND01G-A family - designed specifically for cost-effective, high-reliability mass storage in resource-constrained embedded systems with minimal external logic requirements.

FAQ

Does NAND256W3A0AN6F support x16 bus width?

No. NAND256W3A0AN6F is an x8 device with I/O0–I/O7 pins only. The 'W' in the part number denotes 1.8V operation and x8 interface; x16 variants in this family use 'R' suffix (e.g., NAND256R3A). Pinout, timing, and command set differ between x8 and x16 versions - they are not interchangeable.

What is the function of the AL and CL pins?

AL (Address Latch Enable) and CL (Command Latch Enable) are control inputs that synchronize multiplexed bus transfers. AL latches column/row address bytes into internal registers during address phases; CL latches command codes (e.g., 00h for read, 60h for program) prior to data transfer. Both must be strobed with precise setup/hold timing relative to WE# as defined in Table 20 of the datasheet.

Can the Ready/Busy (RB#) pin drive multiple NAND devices in parallel?

Yes. RB# is an open-drain output with no internal pull-up. Multiple NAND256W3A0AN6F devices can share a single external pull-up resistor to VDD, allowing the host to monitor collective busy status across a NAND array. This simplifies polling logic in multi-chip storage modules and avoids individual GPIO allocation per device.

Is ECC mandatory for reliable operation?

Yes. Each page contains only 16 spare bytes - insufficient for robust BCH or LDPC correction required for 100,000-cycle endurance. STMicroelectronics explicitly recommends implementing external ECC (e.g., 4-bit correction per 512-byte sector) in the host controller. Uncorrected bit errors accumulate with P/E cycling, leading to premature block failure if ECC is omitted.