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STMicroelectronics NAND256W4A0AN6E
- Part No.:
- NAND256W4A0AN6E
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
NAND256W4A0AN6E.pdf
- Description:
- IC FLASH 256MBIT PARALLEL 48TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,601
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Product details
Overview
NAND256W4A0AN6E from STMicroelectronics is a 256 Mbit (32 MB) x8 NAND Flash memory with 1.8 V supply, 528-byte page size (512 + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package - designed for embedded boot storage and mass data logging in portable industrial controllers.
For engineers reviewing the NAND256W4A0AN6E datasheet, NAND256W4A0AN6E pinout, NAND256W4A0AN6E application, or NAND256W4A0AN6E equivalent, key selection criteria include 1.8 V operation, automatic Page 0 read at power-up, chip enable "don't care" mode, copy-back programming support, and hardware write protection via WP pin.
Technical Context
This device implements a standard NAND interface with multiplexed I/O[7:0] for address/data/command transfer, requiring external address latching via AL and command latching via CL. It uses an open-drain Ready/Busy (RB) signal to indicate internal P/E/R controller activity without bus contention.
It supports automatic boot loading via Power-Up Page 0 Read and simplifies microcontroller interfacing through Chip Enable "Don't Care" mode - eliminating need for CE assertion during command/address/data phases in basic configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 256 Mbit (32 MB) organized as 2048 blocks × 64 pages × 528 bytes |
| Supply Voltage | 1.8 V nominal (VDD = 1.7–1.95 V); enables low-power portable designs |
| Page Size | 528 bytes (512 data + 16 spare); supports ECC metadata storage per page |
| Block Size | 16,384 bytes (16 KB) + 512-byte spare area; defines minimum erase granularity |
| Page Program Time | 200 µs typical; determines write throughput in sequential logging applications |
| Block Erase Time | 2 ms typical; enables fast wear-leveling and garbage collection cycles |
| Data Retention | 10 years at 25 °C; validated for long-term archival in unpowered storage |
| Endurance | 100,000 program/erase cycles per block; requires host-level wear leveling |
Pinout & Package
TSOP48 (12 × 20 mm), 48-pin plastic thin small outline package with standard JEDEC footprint and lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O[7:0] | Multiplexed Data/Address/Command Bus | Shared 8-bit path for all transfers; requires AL/CL control for phase demarcation |
| AL | Address Latch Enable | Strobes column/row address into internal latch on rising edge |
| CL | Command Latch Enable | Strobes command byte (e.g., 0x00, 0x30) into command register |
| E | Chip Enable | Active-low device select; supports "don't care" mode for simplified MCU interface |
| R | Read Enable | Controls output buffer enable timing during data read operations |
| W | Write Enable | Controls input latch timing for command, address, and data writes |
| WP | Write Protect | Hardware lock preventing accidental program/erase when asserted low |
| RB | Ready/Busy Output | Open-drain signal indicating active P/E/R controller; shared across multiple devices |
| VDD | Power Supply | 1.7–1.95 V core supply; decoupling required within 10 mm of pin |
| VSS | Ground | Digital ground reference; separate analog ground not required |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Page 0 Read at Power-Up | Enables direct boot execution from NAND without external loader firmware |
| Copy Back Program Mode | Permits intra-device page relocation without host RAM buffering - reduces system memory overhead |
| Chip Enable "Don't Care" Option | Allows E to remain inactive during command/address/data phases - eliminates glue logic in simple MCU interfaces |
| Hardware Write Protection (WP) | Prevents unintended program/erase during power ramp or noise events - no software dependency |
| Spare Area Architecture | 16-byte spare per 512-byte page enables robust ECC (e.g., BCH 4-bit) and bad-block marking |
Applications
| Industrial Data Logger | Embedded Boot Storage |
|---|---|
Use Scenario: Continuous timestamped sensor data capture in remote environmental monitoring units with intermittent power. IC Role / Device Role / Timing Role: Primary non-volatile storage for cyclic logging; leverages 100K endurance and 10-year retention. Use Value: Eliminates need for battery-backed SRAM or EEPROM; supports field firmware updates via block reprogramming. | Use Scenario: Boot image storage for ARM Cortex-M7-based motor drive controller with no external NOR flash. IC Role / Device Role / Timing Role: Direct-execution-capable boot medium using Power-Up Page 0 Read and CE "don't care" mode. Use Value: Reduces BOM count by removing dedicated boot ROM; enables secure firmware versioning via spare-area checksums. |
| Portable Medical Recorder | Smart Meter Firmware Archive |
Use Scenario: ECG waveform storage in Class II medical device with regulatory-compliant data integrity requirements. IC Role / Device Role / Timing Role: High-reliability data sink using Copy Back and hardware WP to prevent corruption during brownout. Use Value: Meets IEC 62304 data persistence requirements without external error correction IC. | Use Scenario: Over-the-air (OTA) firmware rollback archive in utility smart meters deployed for >15 years. IC Role / Device Role / Timing Role: Immutable firmware backup partition; leverages spare area for digital signature storage. Use Value: Enables certified safe recovery after failed OTA update - no external secure element needed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F2G08ABAEAH4-IT:E | 2 Gbit density, 3.3 V supply, 2112-byte page (x8), ONFI 2.3 interface | Requires ONFI-compatible controller; not pin-compatible; higher capacity but incompatible timing | Select only if migrating to higher-density, standardized ONFI interface with updated controller firmware |
| TC58NVG1S3ETA00 | 1 Gbit density, 1.8 V supply, 2112-byte page (x8), Toshiba toggle-mode interface | Toggle DDR interface doubles effective bandwidth but requires different command protocol and timing setup | Choose for throughput-critical logging where host supports toggle-mode; not drop-in replaceable |
Compared with NAND256W4A0AN6E, MT29F2G08ABAEAH4-IT:E offers greater density and standardized ONFI compatibility but demands full interface redesign, while TC58NVG1S3ETA00 delivers higher speed via toggle DDR yet requires controller-level protocol adaptation - neither supports automatic Page 0 read or CE "don't care" mode out-of-box.
Availability
NAND256W4A0AN6E is available at Aetrix Electronics and suitable for industrial data loggers, embedded boot storage, and portable medical recorders requiring stable component supply across multi-year production cycles.
Supply support for NAND256W4A0AN6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in automotive, industrial, and embedded flash solutions with vertical manufacturing control.
This part belongs to the NAND128-A/NAND256-A/NAND512-A/NAND01G-A family - engineered specifically for cost-sensitive, high-reliability mass storage in resource-constrained microcontroller systems.
FAQ
Does NAND256W4A0AN6E support x16 bus width?
No. NAND256W4A0AN6E is an x8 device - it uses 8-bit I/O[7:0] for all transfers. The "W4" in the part number denotes 1.8 V supply and x8 configuration; x16 variants use "R4" suffix (e.g., NAND256R4A). Pinout and command set are incompatible between x8 and x16 versions.
What is the purpose of the spare area in each page?
The 16-byte spare area per 528-byte page stores ECC parity bits (e.g., for BCH 4-bit correction), bad-block markers, logical-to-physical page mapping metadata, and firmware version signatures. It is inaccessible during normal read/write but essential for host-based wear leveling and error recovery algorithms.
Can NAND256W4A0AN6E be used without an external controller?
No. This NAND Flash requires an external memory controller or MCU with NAND interface logic (e.g., FSMC on STM32, EBI on NXP Kinetis) to manage command sequencing, RB polling, ECC calculation, bad-block management, and wear leveling - no built-in controller or SPI-like simplicity.
Is the TSOP48 package RoHS compliant and lead-free?
Yes. Per STMicroelectronics' packaging documentation, the TSOP48 variant of NAND256W4A0AN6E uses lead-free terminations and complies with RoHS Directive 2011/65/EU. The "N6E" suffix confirms green (halogen-free) and lead-free construction per manufacturer's ordering scheme.
NAND256W4A0AN6E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 256Mbit
- Memory Organization:
- 16M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 50ns
- Access Time:
- 50 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
NAND256W4A0AN6E FAQ
1.How can I place an order for NAND256W4A0AN6E through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND256W4A0AN6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND256W4A0AN6E reliable?
The price and inventory of NAND256W4A0AN6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND256W4A0AN6E is usually 5 days.
3.What payment methods are accepted for NAND256W4A0AN6E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND256W4A0AN6E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NAND256W4A0AN6E?
NAND256W4A0AN6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NAND256W4A0AN6E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND256W4A0AN6E?
For technical support, including NAND256W4A0AN6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND256W4A0AN6E requirements.
6.How does Aetrix verify that NAND256W4A0AN6E is sourced from the original manufacturer or authorized distributors?
All NAND256W4A0AN6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND256W4A0AN6E meets industry standards.
7.What is the process for return or replacement of NAND256W4A0AN6E?
All NAND256W4A0AN6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND256W4A0AN6E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND256W4A0AN6E part is unused and in its original packaging.
Return procedure for NAND256W4A0AN6E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND256W4A0AN6E Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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