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STMicroelectronics NAND512R3A2AZA6E

Name: NAND512R3A2AZA6E
Brand: STMicroelectronics
SKU: NAND512R3A2AZA6E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NAND512R3A2AZA6E

Manufacturer:: STMicroelectronics

Category:: Memory

Package:: 55-TFBGA

Datasheet:: NAND512R3A2AZA6E.pdf

Description:: IC FLASH 512MBIT PAR 55VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NAND512R3A2AZA6E from STMicroelectronics is a 512 Mbit (64 MB) x8 NAND Flash memory with 1.8V/3V dual-supply support, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It delivers 12 µs max random access, 50 ns min sequential read, and 2 ms typical block erase - enabling embedded boot storage and mass data logging in portable industrial controllers.

For engineers reviewing the NAND512R3A2AZA6E datasheet, NAND512R3A2AZA6E pinout, NAND512R3A2AZA6E application, or NAND512R3A2AZA6E equivalent, key selection criteria include page-level copy-back capability, automatic Page 0 read at power-up for boot-from-NAND, chip enable 'don't care' mode for simplified microcontroller interfacing, and hardware write protection via WP pin.

Technical Context

This device implements a standard NAND interface with multiplexed I/O[7:0] for address/data/command transfer, using AL, CL, and WE signals to latch address bytes, command codes, and data respectively. Its open-drain Ready/Busy output supports wired-OR connection across multiple devices for shared status monitoring.

The internal P/E/R controller manages all program, erase, and read operations autonomously; status register bits (SR0–SR7) provide real-time feedback on operation completion, error detection, and write-protection state - eliminating need for external timing delays in host firmware.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	512 Mbit (64 MB) organized as 4,096 blocks × 64 pages × 528 bytes - sufficient for firmware image storage and field-upgradable log buffers.
Page Size	528 bytes (512 data + 16 spare) - spare area accommodates ECC metadata and wear-leveling tags without host software overhead.
Block Size	16,384 bytes (16 KB + 512 spare) - matches typical filesystem cluster alignment and enables efficient garbage collection.
Random Access Time	12 µs maximum - ensures responsive command execution during initialization and small-data reads.
Sequential Read Speed	50 ns minimum cycle time - supports sustained throughput >16 MB/s for bulk data streaming.
Block Erase Time	2 ms typical - reduces firmware update latency and improves system-level responsiveness during reprogramming.
Endurance	100,000 program/erase cycles per block - validated for long-life deployment in industrial logging and telemetry applications.
Data Retention	10 years at 25°C - guarantees integrity of stored configuration and calibration data over full product lifecycle.

Pinout & Package

TSOP48 (12 × 20 mm) package with 48-pin leaded surface-mount footprint, compatible with standard reflow profiles and automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
I/O[7:0]	Multiplexed Data/Address/Command Bus	Shared 8-bit path for all transfers; AL/CL/WE control latching sequence - reduces PCB trace count and simplifies routing.
CE#	Chip Enable	Active-low device select; supports 'don't care' mode to eliminate external gating logic when interfacing with simple microcontrollers.
RE#	Read Enable	Controls data output timing; used with RB# to synchronize host read sampling without fixed delay loops.
WE#	Write Enable	Latches command/address/data on falling edge; enables precise timing control for command sequencing.
WP#	Write Protect	Hardware lock against accidental program/erase - critical for protecting bootloader sectors during field updates.
RB#	Ready/Busy Output	Open-drain signal indicating P/E/R controller activity; supports multi-device wired-OR bus for centralized status polling.
AL	Address Latch Enable	Signals start of address byte transfer; separates address phase from data/command phases on shared I/O bus.
CL	Command Latch Enable	Signals start of command byte transfer; enables reliable command decoding independent of address/data timing.

Key Features

Feature	Design Value
Copy Back Program Mode	Enables intra-device page relocation without host RAM buffering - reduces firmware complexity for bad-block remapping.
Automatic Page 0 Read at Power-Up	Loads first 528 bytes into I/O buffer on reset - eliminates external boot ROM and accelerates cold-start execution.
Chip Enable 'Don't Care' Option	Allows CE# to float or remain high during command/address/data phases - removes glue logic for 8051/ARM Cortex-M0 hosts.
Hardware Write Protection	Prevents unintended writes during power ramp-up/down or ESD events - ensures bootloader and factory calibration data integrity.
Status Register Monitoring	Provides bit-level visibility into P/E/R progress, error flags (SR0), and write-lock state (SR7) - enables deterministic host driver design.

Applications

Industrial Data Logger

Embedded Boot Storage

Use Scenario: Continuous sensor data capture in remote environmental monitoring nodes with limited power budget and no external storage.

IC Role / Device Role / Timing Role: Primary non-volatile storage for timestamped samples; leverages 10-year retention and 100K-cycle endurance for decade-long deployments.

Use Value: Eliminates need for battery-backed SRAM or SD card interfaces - reduces BOM cost and improves reliability in sealed enclosures.

Use Scenario: Cold-boot execution of firmware on ARM-based PLCs where NOR flash is cost-prohibitive at >32 MB capacity.

IC Role / Device Role / Timing Role: Boot source with automatic Page 0 fetch; supports NAND-aware bootloader loading via minimal GPIO-controlled interface.

Use Value: Enables direct execution from NAND with integrated ECC handling - cuts boot time by 40% vs. SPI NOR + external RAM loading.

Telematics Control Unit

Firmware Update Module

Use Scenario: Storing GPS trajectory logs and CAN bus diagnostics in automotive-grade telematics gateways operating across -40°C to +85°C.

IC Role / Device Role / Timing Role: High-reliability data sink with hardware WP# and status register error reporting - critical for ISO 26262 ASIL-B compliance.

Use Value: Guarantees log integrity during voltage dips and thermal cycling - avoids data corruption during vehicle ignition transients.

Use Scenario: Field-upgradable firmware partition in medical imaging subsystems requiring secure, atomic update rollback capability.

IC Role / Device Role / Timing Role: Dual-bank storage with copy-back and block-erase granularity - enables A/B firmware swapping without external controller.

Use Value: Reduces update window by 65% compared to serial NOR; supports zero-downtime patching in life-critical systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT29F512G08CFAAAWP-IT	512 Gbit (64 GB), 4KB page, ONFI 3.2 interface, VFBGA63 package - 100× higher density, DDR timing, no auto Page 0 read.	Targeted at SSD controllers and high-throughput data recorders; requires ONFI-compliant PHY and complex ECC engine.	Select only when >1 GB capacity and >200 MB/s throughput are mandatory; not drop-in compatible due to protocol and timing differences.
W29N02GVSIAA	2 Gbit (256 MB), x16 interface, 2112-byte page, TSOP48, supports internal ECC but lacks copy-back and auto Page 0 read.	Suitable for cost-sensitive consumer electronics with simpler firmware architecture; no boot-from-NAND support.	Choose for lower-cost designs where boot ROM remains external and bad-block management is handled entirely in host software.

Compared with MT29F512G08CFAAAWP-IT and W29N02GVSIAA, NAND512R3A2AZA6E uniquely balances legacy microcontroller compatibility, boot autonomy, and industrial endurance - making it optimal for resource-constrained embedded systems requiring deterministic startup and long-term field reliability.

Availability

NAND512R3A2AZA6E is available at Aetrix Electronics and suitable for industrial data loggers, embedded boot storage, and telematics control units requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for NAND512R3A2AZA6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader specializing in microcontrollers, power management, and non-volatile memory solutions for industrial, automotive, and consumer markets.

This device belongs to ST's NAND128-A/NAND256-A/NAND512-A/NAND01G-A family - designed specifically for cost-effective, high-reliability mass storage in microcontroller-based systems where NOR flash is prohibitively expensive at medium-to-high densities.

FAQ

Does NAND512R3A2AZA6E support hardware ECC generation?

No - this device does not integrate hardware ECC encoding/decoding. It relies on external controller or host processor to implement BCH or Reed-Solomon correction, using the 16-byte spare area per 512-byte page for ECC parity storage. ST provides reference ECC algorithms in its NAND software development kit.

What is the function of the 'Chip Enable Don't Care' option?

When enabled via manufacturer OTP fuse, CE# is ignored during command, address, and data transfer phases - allowing the host to keep CE# continuously asserted. This eliminates external AND gates or timing-critical CE# toggling required by standard NAND protocols, simplifying interface to basic microcontrollers.

Can NAND512R3A2AZA6E be used in 3.3V systems?

No - this part is a 3V device with VDD specification of 2.7V to 3.6V, but it is not 3.3V-tolerant on I/O pins. Direct connection to 3.3V logic violates absolute maximum ratings. Level-shifting circuitry or a 3.0V-compatible host MCU (e.g., STM32L4-series) is required for safe operation.

How is bad block management handled in NAND512R3A2AZA6E?

The device marks bad blocks during factory test by programming non-FFh values in the first two pages' spare area. Host firmware must scan these markers at initialization and maintain a logical-to-physical block map. ST's reference software includes Bad Block Management and Wear Leveling libraries compliant with JEDEC JESD218 standards.

NAND512R3A2AZA6E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 55-TFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NAND

Memory Size:: 512Mbit

Memory Organization:: 64M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 60ns

Access Time:: 60 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 55-VFBGA (8x10)

NAND512R3A2AZA6E FAQ

1.How can I place an order for NAND512R3A2AZA6E through Aetrix?

Please submit a Request for Quotation (RFQ) for NAND512R3A2AZA6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NAND512R3A2AZA6E reliable?

The price and inventory of NAND512R3A2AZA6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND512R3A2AZA6E is usually 5 days.

3.What payment methods are accepted for NAND512R3A2AZA6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND512R3A2AZA6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NAND512R3A2AZA6E?

NAND512R3A2AZA6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NAND512R3A2AZA6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NAND512R3A2AZA6E?

For technical support, including NAND512R3A2AZA6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND512R3A2AZA6E requirements.

6.How does Aetrix verify that NAND512R3A2AZA6E is sourced from the original manufacturer or authorized distributors?

All NAND512R3A2AZA6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND512R3A2AZA6E meets industry standards.

7.What is the process for return or replacement of NAND512R3A2AZA6E?

All NAND512R3A2AZA6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND512R3A2AZA6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NAND512R3A2AZA6E part is unused and in its original packaging.

Return procedure for NAND512R3A2AZA6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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