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STMicroelectronics NAND512R3A2BZA6E

Name: NAND512R3A2BZA6E
Brand: STMicroelectronics
SKU: NAND512R3A2BZA6E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NAND512R3A2BZA6E

Manufacturer:: STMicroelectronics

Category:: Memory

Package:: 63-VFBGA

Datasheet:: NAND512R3A2BZA6E.pdf

Description:: IC FLASH 512MBIT PAR 63VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NAND512R3A2BZA6E from STMicroelectronics is a 512 Mbit (64 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading and features hardware write protection via WP pin. Used in embedded storage modules requiring high-density non-volatile memory with ECC-compatible architecture.

For engineers reviewing the NAND512R3A2BZA6E datasheet, NAND512R3A2BZA6E pinout, NAND512R3A2BZA6E application, or NAND512R3A2BZA6E equivalent, key selection criteria include page/block geometry, VDD tolerance (1.7–1.95 V), Ready/Busy open-drain timing, Copy Back Program capability, and TSOP48 mechanical compatibility with legacy 48-pin socket designs.

Technical Context

This device implements a standard NAND interface with multiplexed I/O0–I/O7 address/data bus, AL/CL control signals, and asynchronous command execution. It uses floating-gate NAND cell architecture with on-chip P/E/R controller managing program, erase, and status register operations.

Page-level random access time is ≤12 µs; sequential read speed is ≥50 ns; typical page program time is 200 µs; and block erase time is 2 ms. The Ready/Busy signal indicates internal controller activity, and the Write Protect pin disables all program/erase commands during power transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	512 Mbit (64 MB) organized as 4,096 blocks × 64 pages × 528 bytes/page
Bus Width	x8 interface with multiplexed I/O0–I/O7 for address/data transfer
Supply Voltage	VDD = 1.7 V to 1.95 V - requires tight regulation for reliable program/erase cycling
Page Size	528 bytes (512 data + 16 spare) - spare area reserved for ECC metadata and bad block markers
Block Size	16,384 bytes (16 KB) including 512-byte spare - minimum erasable unit for wear leveling
Page Program Time	200 µs typical - determines sustained write throughput in buffered host systems
Block Erase Time	2 ms typical - enables fast background garbage collection in managed NAND firmware

Pinout & Package

TSOP48 (12 × 20 mm), 0.5 mm pitch, standard JEDEC-compliant thin small-outline package with gull-wing leads. Compatible with automated SMT placement and reflow profiles for lead-free assembly.

Pin/Terminal	Circuit Role	Design Meaning
I/O0–I/O7	Multiplexed Address/Data Bus	Carries column/row addresses during AL/CL assertion; transfers data during read/write cycles
AL	Address Latch Enable	Strobes lower-order address bits into internal latch when low; controls address setup timing
CL	Command Latch Enable	Latches command codes (e.g., 0x00, 0x30, 0x60) into instruction register on falling edge
E	Chip Enable	Active-low chip select; "don't care" option allows simplified microcontroller interfacing
R	Read Enable	Controls output enable of I/O pins during read operations; defines data hold time window
W	Write Enable	Strobes data/command/address into device on falling edge; synchronizes internal state machine
WP	Write Protect	Hardware lock preventing accidental program/erase during power ramp or reset sequences
RB	Ready/Busy	Open-drain output indicating P/E/R controller activity; shared bus connection supported
VDD	Power Supply	1.7–1.95 V core supply; decoupling capacitor required within 1 cm of pin per datasheet layout rules
VSS	Ground	Digital ground reference; separate analog/digital grounding not required for this device

Key Features

Feature	Design Value
Copy Back Program Mode	Enables intra-device page relocation without host-side data buffering - reduces firmware complexity in bad block management
Automatic Page 0 Read at Power-Up	Loads boot code directly from first page on power-on - eliminates external ROM or boot loader dependency
Chip Enable 'Don't Care' Option	Allows E pin to float or tie-high without disabling device - simplifies interface to microcontrollers lacking dedicated chip select
Hardware Data Protection	Internal lockout of program/erase during VDD ramp-up/down - prevents corruption during brown-out conditions
Electronic Signature Read	Verifies manufacturer ID (0x20), device ID (0xDA), and extended ID (0x20, 0x00) - ensures correct part recognition in multi-die systems

Applications

Industrial HMI Storage

Medical Device Firmware

Use Scenario: Storing configuration profiles, calibration tables, and UI assets in panel-mounted HMIs with limited PCB space.

IC Role / Device Role / Timing Role: Non-volatile boot and parameter storage; accessed via SPI-to-NAND bridge or direct MPU GPIO-banged interface.

Use Value: TSOP48 footprint enables drop-in replacement of legacy NOR flash; 100,000 P/E cycles support >5 years of field updates.

Use Scenario: Holding FDA-compliant firmware images and audit logs in portable diagnostic equipment requiring data integrity certification.

IC Role / Device Role / Timing Role: Primary firmware storage with ECC-managed reliability; powered from isolated 1.8V rail with WP pin tied to system security controller.

Use Value: Spare byte area accommodates BCH-4 ECC metadata; automatic Page 0 read ensures deterministic boot sequence per IEC 62304.

Automotive Infotainment

Smart Meter Firmware

Use Scenario: Caching map tiles and voice prompt audio in automotive head units operating across -40°C to +105°C ambient range.

IC Role / Device Role / Timing Role: High-speed sequential read buffer for multimedia assets; interfaced through dedicated NAND controller IP in SoC.

Use Value: 50 ns sequential access meets real-time streaming latency targets; 10-year data retention satisfies AEC-Q100 Grade 2 requirements.

Use Scenario: Storing tariff tables, firmware patches, and tamper-evident event logs in ANSI C12.22-compliant electricity meters.

IC Role / Device Role / Timing Role: Secure, long-life firmware repository; WP pin driven by secure element to prevent unauthorized reprogramming.

Use Value: Hardware write protection enforces cryptographic signature verification before any update; block-level erase supports atomic OTA patching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT29F512G08CBEBBH6-12IT:B	512 Gbit (64 GB), 3.3V, 4KB page, BGA63 - 100× higher density, different voltage and packaging	Targeted at SSDs and eMMC modules, not embedded boot storage	Select only if migrating to managed NAND architecture with integrated controller
TC58NVG2S3ETA00	1 Gbit (128 MB), 3.3V, 2KB page, TSOP48 - same package but higher density and incompatible VDD range	Requires level-shifting for 1.8V hosts; lacks automatic Page 0 read feature	Choose only if 1 Gbit capacity is mandatory and power supply can be adjusted to 2.7–3.6 V

Compared with NAND512R3A2BZA6E, MT29F512G08CBEBBH6-12IT:B offers vastly greater capacity but demands full NAND controller support and BGA rework, while TC58NVG2S3ETA00 provides pin-compatible density scaling at 3.3V - neither replicates the 1.8V boot-capable operation essential for low-power embedded boot loaders.

Availability

NAND512R3A2BZA6E is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, automotive infotainment, and smart meter firmware requiring stable component supply and long-term obsolescence planning.

Supply support for NAND512R3A2BZA6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, memories, power ICs, and sensors for industrial, automotive, and consumer markets.

This device belongs to ST's legacy NAND Flash product line targeting cost-sensitive, high-reliability embedded storage where simplicity, proven endurance, and boot-from-flash capability are prioritized over advanced features like ONFI or Toggle DDR interfaces.

FAQ

Does NAND512R3A2BZA6E support x16 bus width?

No. NAND512R3A2BZA6E is an x8-only device, confirmed by its part number suffix "R3A" (indicating 1.8V, x8, TSOP48) and datasheet Table 2. It uses I/O0–I/O7 for multiplexed address/data transfer and does not implement I/O8–I/O15 signals. Systems requiring x16 must select alternate part numbers such as NAND512W3A.

What is the function of the "A6E" suffix in the part number?

The "A6E" suffix denotes the specific TSOP48 package variant with industrial temperature range (−40°C to +85°C) and lead-free (Pb-free) finish, per STMicroelectronics' ordering scheme in Table 28. It does not indicate revision level or process node - "A6" is the package code, "E" confirms RoHS compliance.

Can the Ready/Busy (RB) pin drive multiple NAND devices in parallel?

Yes. RB is an open-drain output with no internal pull-up; it supports wired-OR connection of up to 8 devices sharing a single external 10 kΩ pull-up resistor to VDD. This allows centralized status polling in multi-chip NAND arrays without additional logic, as specified in Figure 37 and Section "Ready/Busy Signal Electrical Characteristics".

Is Error Correction Code (ECC) implemented internally?

No. NAND512R3A2BZA6E provides no on-die ECC engine. It relies on external controller or host processor to compute and apply BCH or Hamming codes using the 16-byte spare area per page. ST recommends ≥4-bit ECC for reliable operation over 100,000 P/E cycles, as detailed in Section "SOFTWARE ALGORITHMS" and Table 14.

NAND512R3A2BZA6E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 63-VFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NAND

Memory Size:: 512Mbit

Memory Organization:: 64M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 60ns

Access Time:: 60 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 63-VFBGA (8.5x15)

NAND512R3A2BZA6E FAQ

1.How can I place an order for NAND512R3A2BZA6E through Aetrix?

Please submit a Request for Quotation (RFQ) for NAND512R3A2BZA6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NAND512R3A2BZA6E reliable?

The price and inventory of NAND512R3A2BZA6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND512R3A2BZA6E is usually 5 days.

3.What payment methods are accepted for NAND512R3A2BZA6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND512R3A2BZA6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NAND512R3A2BZA6E?

NAND512R3A2BZA6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NAND512R3A2BZA6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NAND512R3A2BZA6E?

For technical support, including NAND512R3A2BZA6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND512R3A2BZA6E requirements.

6.How does Aetrix verify that NAND512R3A2BZA6E is sourced from the original manufacturer or authorized distributors?

All NAND512R3A2BZA6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND512R3A2BZA6E meets industry standards.

7.What is the process for return or replacement of NAND512R3A2BZA6E?

All NAND512R3A2BZA6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND512R3A2BZA6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NAND512R3A2BZA6E part is unused and in its original packaging.

Return procedure for NAND512R3A2BZA6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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