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STMicroelectronics NAND512W3A0AN6
- Part No.:
- NAND512W3A0AN6
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
NAND512W3A0AN6.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 48TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:1,840
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Product details
Overview
NAND512W3A0AN6 from STMicroelectronics is a 512 Mbit (64 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading, copy-back programming for defect management, and hardware write protection via WP pin - deployed in embedded storage modules, industrial HMIs, and legacy mobile baseband firmware.
For engineers reviewing the NAND512W3A0AN6 datasheet, NAND512W3A0AN6 pinout, NAND512W3A0AN6 application, or NAND512W3A0AN6 equivalent, key selection criteria include 1.8V VDD tolerance (1.7–1.95V), 100,000 P/E cycles, 10-year data retention, open-drain Ready/Busy signaling, and TSOP48 mechanical compatibility with legacy PCB footprints.
Technical Context
This device implements a true NAND architecture with multiplexed I/O (x8 bus width), requiring external ECC handling and bad-block management. Its command-set-driven operation relies on AL, CL, WE, RE, and CE control signals to sequence page reads, program operations, and block erases - all governed by internal state machines without on-die ECC logic.
The TSOP48 package supports direct interfacing with microcontrollers lacking NAND controllers, using simple glue logic or dedicated NAND interface peripherals. Chip Enable 'Don't Care' mode simplifies timing during power-up initialization, while automatic Page 0 read enables boot-from-NAND functionality without host intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (64 MB) organized as 4,096 blocks × 64 pages × 528 bytes/page |
| Supply Voltage | 1.8V nominal; operates within 1.7–1.95V - mandates low-noise LDO regulation |
| Page Size | 528 bytes (512 data + 16 spare) - spare area stores ECC, wear-leveling metadata, and bad-block markers |
| Block Size | 16,384 bytes (16 KB) including 512-byte spare - minimum erasable unit; impacts garbage collection granularity |
| Page Program Time | 200 µs typical - defines minimum time between successive page writes in same block |
| Block Erase Time | 2 ms typical - determines speed of block retirement and replacement during wear leveling |
| Random Access Time | 12 µs max - limits latency for single-byte reads during status polling or small metadata fetches |
| Data Retention | 10 years at 25°C - degrades with elevated temperature and P/E cycle count; requires thermal derating in industrial use |
Pinout & Package
TSOP48 (12 × 20 mm, 0.5 mm pitch) surface-mount package with standard JEDEC-compliant footprint. Compatible with reflow soldering per J-STD-020C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O0–I/O7 | Multiplexed Data Bus (x8) | Carry address, command, and data under AL/CL/WE/RE control; require bidirectional buffering in host interface |
| CE# | Chip Enable | Active-low chip select; supports 'Don't Care' mode during power-up for automatic Page 0 read |
| WE# | Write Enable | Strobes command/address/data into internal latches; controls write timing for setup/hold compliance |
| RE# | Read Enable | Controls output enable of I/O pins during read operations; governs sequential read timing (50 ns min) |
| CL# | Command Latch Enable | Latches command byte (e.g., 00h, 30h, 60h) into instruction decoder; must precede address/data phases |
| AL# | Address Latch Enable | Latches column/row address bytes; separates address phase from data/command phases on shared I/O bus |
| RB# | Ready/Busy Output | Open-drain signal indicating P/E/R controller activity; requires external pull-up; supports wired-OR across multiple devices |
| WP# | Write Protect Input | Hardware lock preventing program/erase when asserted low; independent of software command lock |
| VDD | Power Supply | 1.8V core supply; decoupling required per datasheet layout guidelines to suppress switching noise |
| VSS | Ground | Digital ground reference; separate analog/digital grounding not required (single-supply design) |
Key Features
| Feature | Design Value |
|---|---|
| Copy Back Program Mode | Enables intra-device page relocation without host data retransmission - reduces system-level latency during bad-block remapping |
| Automatic Page 0 Read at Power-Up | Loads boot code directly from first page upon reset - eliminates need for external boot ROM or host-initiated initialization sequence |
| Chip Enable 'Don't Care' Option | Permits valid operation even if CE# remains high during power ramp - simplifies interface with microcontrollers lacking precise CE timing control |
| Hardware Data Protection | Program/erase locked during VDD transitions below 1.5V - prevents corruption during brown-out or uncontrolled power-down |
| Electronic Signature Read | Provides manufacturer ID (0x20), device ID (0xDA for NAND512W3A), and extended ID - enables runtime device identification and firmware compatibility checks |
Applications
| Industrial HMI Storage | Legacy Mobile Baseband Firmware |
|---|---|
Use Scenario: Storing GUI assets, configuration profiles, and firmware updates in panel-mounted human-machine interfaces operating at -40°C to +85°C. IC Role / Device Role / Timing Role: Non-volatile code and data storage with direct microcontroller interface; supports sequential read bursts for image streaming. Use Value: TSOP48 footprint ensures backward compatibility with existing industrial PCBs; 10-year retention guarantees long-term field reliability without refresh cycles. |
Use Scenario: Holding modem protocol stack binaries and calibration tables in 2G/3G cellular handsets where space and BOM cost are constrained. IC Role / Device Role / Timing Role: Boot memory mapped via NAND controller peripheral; leverages automatic Page 0 read for cold-start execution. Use Value: 1.8V operation reduces power consumption vs. 3V alternatives; copy-back mode accelerates field firmware patching without host RAM overhead. |
| Embedded Telematics Log Buffer | Medical Diagnostic Device Firmware |
Use Scenario: Capturing CAN bus diagnostic logs and sensor snapshots in automotive telematics units with intermittent power and vibration exposure. IC Role / Device Role / Timing Role: High-endurance write buffer with hardware WP# lock during vehicle ignition transients. Use Value: 100,000 P/E cycles enable >5 years of daily log rotation; open-drain RB# allows multi-chip busy monitoring on shared interrupt line. |
Use Scenario: Storing FDA-cleared application firmware and calibration coefficients in portable ultrasound and ECG analyzers requiring traceable revision history. IC Role / Device Role / Timing Role: Secure firmware repository with electronic signature verification at boot; spare area used for cryptographic hash storage. Use Value: Spare byte allocation (16 per page) accommodates SHA-256 signatures and version metadata - enabling secure boot chain validation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F512G08CBECBH6 | 512Gb (64GB) x8, 3.3V, 20nm process; includes on-die ECC and toggle DDR interface | Higher density, faster throughput, but incompatible voltage and timing - requires redesign of power and interface logic | Select only when migrating to modern high-speed embedded storage with NAND controller support |
| TC58NVG2S3ETA00 | 1Gb (128MB) x8, 3.3V, 43 nm; supports ONFI 2.3, includes internal ECC engine | Not pin-compatible; different command set and timing parameters - no TSOP48 footprint match | Use only for new designs targeting higher capacity and standardized ONFI interface; not a drop-in replacement |
Compared with MT29F512G08CBECBH6 and TC58NVG2S3ETA00, NAND512W3A0AN6 offers proven 1.8V TSOP48 compatibility and minimal interface logic requirements - making it optimal for cost-sensitive, space-constrained legacy upgrades where voltage, footprint, and command-set continuity are mandatory.
Availability
NAND512W3A0AN6 is available at Aetrix Electronics and suitable for industrial HMI storage, legacy mobile baseband firmware, and embedded telematics log buffering requiring stable component supply and long-lifecycle support.
Supply support for NAND512W3A0AN6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader specializing in automotive, industrial, and embedded flash solutions, with over 30 years of non-volatile memory innovation.
This part belongs to the NAND128-A/NAND256-A/NAND512-A/NAND01G-A family - designed specifically for cost-effective, high-reliability mass storage in resource-constrained embedded systems without integrated NAND controllers.
FAQ
Does NAND512W3A0AN6 include built-in Error Correction Code (ECC) logic?
No. NAND512W3A0AN6 lacks on-die ECC circuitry. External ECC must be implemented in the host processor or dedicated controller - typically using BCH or Reed-Solomon algorithms capable of correcting up to 4-bit errors per 512-byte sector, leveraging the 16-byte spare area per page.
What is the function of the 'Chip Enable Don't Care' option?
When enabled, the device ignores CE# state during power-up and automatically executes Page 0 read regardless of CE# level. This eliminates timing-critical CE# assertion requirements at reset, simplifying integration with microcontrollers that lack precise early-power-on GPIO control.
Can NAND512W3A0AN6 be operated at 3.3V?
No. NAND512W3A0AN6 is a 1.8V-only device specified for 1.7–1.95V VDD operation. Applying 3.3V will cause permanent damage. It is not interchangeable with 3V-family parts like NAND512R3A or NAND512W3A (3V variant); the 'W' suffix here denotes 1.8V operation per ST's part numbering scheme.
How is bad block management handled in this device?
Bad blocks are factory-marked in the first two pages of each block using non-FFh values in the spare area. Host firmware must scan these pages at initialization and maintain a dynamic bad-block table. The device supports copy-back programming to relocate valid data from failing blocks without host-side data buffering.
NAND512W3A0AN6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 50ns
- Access Time:
- 50 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
NAND512W3A0AN6 FAQ
1.How can I place an order for NAND512W3A0AN6 through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND512W3A0AN6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND512W3A0AN6 reliable?
The price and inventory of NAND512W3A0AN6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND512W3A0AN6 is usually 5 days.
3.What payment methods are accepted for NAND512W3A0AN6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND512W3A0AN6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NAND512W3A0AN6?
NAND512W3A0AN6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NAND512W3A0AN6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND512W3A0AN6?
For technical support, including NAND512W3A0AN6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND512W3A0AN6 requirements.
6.How does Aetrix verify that NAND512W3A0AN6 is sourced from the original manufacturer or authorized distributors?
All NAND512W3A0AN6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND512W3A0AN6 meets industry standards.
7.What is the process for return or replacement of NAND512W3A0AN6?
All NAND512W3A0AN6 units undergo pre-shipment inspection (PSI). If there is an issue with NAND512W3A0AN6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND512W3A0AN6 part is unused and in its original packaging.
Return procedure for NAND512W3A0AN6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND512W3A0AN6 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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Microchip Technology
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