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STMicroelectronics NAND512W3A0AV6E

Name: NAND512W3A0AV6E
Brand: STMicroelectronics
SKU: NAND512W3A0AV6E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NAND512W3A0AV6E

Manufacturer:: STMicroelectronics

Category:: Memory

Package:: 48-UFSOP (0.606",15.40mm Width)

Datasheet:: NAND512W3A0AV6E.pdf

Description:: IC FLASH 512MBIT PARALLEL 48WSOP

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Product details

Overview

NAND512W3A0AV6E from STMicroelectronics is a 512 Mbit (64 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and TSOP48 package. It supports automatic Page 0 read at power-up for boot code loading and features hardware write protection via WP pin - used in embedded storage modules, industrial HMIs, and portable medical data loggers.

For engineers reviewing the NAND512W3A0AV6E datasheet, NAND512W3A0AV6E pinout, NAND512W3A0AV6E application, or NAND512W3A0AV6E equivalent, key selection criteria include page/block geometry, 1.8V VDD tolerance (1.7–1.95 V), Ready/Busy open-drain timing, Copy Back Program support, and TSOP48 mechanical compatibility with legacy PCB footprints.

Technical Context

This device implements a true NAND architecture with multiplexed I/O (x8 bus width), requiring external ECC handling due to bit-error sensitivity. Its P/E/R controller manages internal state transitions, signaled via open-drain RB output and status register bits (SR0–SR7), including Error (SR0), P/E/R busy (SR6), and Write Protect lock (SR7).

Page-level operations are initiated via command/address/data sequences on shared I/O pins, with AL, CL, WE, RE, and CE controlling latch timing. The "Chip Enable Don't Care" option simplifies microcontroller interfacing by allowing CE to float during non-active cycles, while automatic Page 0 read enables direct boot execution without host initialization.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	512 Mbit (64 MB) organized as 4,096 blocks × 64 pages × 528 bytes/page
Supply Voltage	VDD = 1.7 V to 1.95 V - mandates low-noise 1.8V regulator; not compatible with 3.3V I/O rails without level shifting
Page Size	528 bytes (512 data + 16 spare) - spare area reserved for ECC metadata and bad-block markers
Block Size	16,384 bytes (16 KB) + 512-byte spare - minimum erasable unit; wear leveling must manage block-level endurance
Page Program Time	200 µs typical - defines minimum interval between successive program commands to same block
Block Erase Time	2 ms typical - determines firmware timeout budget for erase confirmation and retry logic
Random Read Access	12 µs max - limits latency for small random reads (e.g., FAT table lookups)
Data Retention	10 years at 25°C - degrades with elevated temperature and program/erase cycling; requires thermal derating in automotive designs

Pinout & Package

TSOP48 (12 × 20 mm, 0.5 mm pitch) surface-mount package with standard JEDEC-compliant footprint. Pin 1 marked by notch or dot; leads are gull-wing, lead-free (Pb-free) compliant.

Pin/Terminal	Circuit Role	Design Meaning
I/O0–I/O7	Multiplexed Data Bus (x8)	Bi-directional interface for command, address, and data transfer; requires external pull-ups for high-impedance states
CE#	Chip Enable	Active-low chip select; "Don't Care" mode allows floating during standby - reduces GPIO count in microcontroller designs
WE#	Write Enable	Controls latching of command/address/data on falling edge; must meet tWP (25 ns min) setup/hold timing
RE#	Read Enable	Controls data output enable and timing; governs tREA (25 ns max) access delay from RE# active to valid data
CL	Command Latch Enable	Latches command byte (e.g., 0x00 for read, 0x80 for program); must be asserted before first data byte
AL	Address Latch Enable	Latches column/row address bytes; separates address phase from data phase on shared I/O bus
RB#	Ready/Busy Output	Open-drain signal indicating internal P/E/R controller activity; requires external 10 kΩ pull-up to VDD
WP#	Write Protect Input	Hardware lock for program/erase - tied low to enable writes; high disables all destructive operations permanently until reset
VDD	Power Supply	1.7–1.95 V core supply; decoupling capacitor (100 nF X7R) required within 5 mm of pin
VSS	Ground	Digital ground reference; must be connected to low-impedance plane, separate from analog/power ground if mixed-signal system

Key Features

Feature	Design Value
Copy Back Program Mode	Enables intra-device page-to-page data relocation without host RAM buffering - critical for bad-block remapping in resource-constrained systems
Automatic Page 0 Read at Power-Up	Loads boot code directly from first page on power-on reset - eliminates need for external boot ROM or host-initiated initialization sequence
Chip Enable 'Don't Care' Option	Permits CE# to remain unconnected or floated during inactive periods - simplifies interface to 8-bit microcontrollers with limited GPIO
Hardware Data Protection	Internal lock during VDD ramp-up/down prevents spurious program/erase - eliminates need for external power-monitoring ICs in cost-sensitive designs
Electronic Signature Read	Provides manufacturer ID (0x20), device ID (0xDA), and extended ID (0x20, 0x00) via standardized command - enables runtime device identification and firmware compatibility checks

Applications

Industrial HMI Storage

Portable Medical Data Logger

Use Scenario: Stores firmware updates, configuration profiles, and historical alarm logs in panel-mounted human-machine interfaces operating in factory environments with wide temperature swings.

IC Role / Device Role: Non-volatile mass storage with direct boot capability and hardware write protection against accidental overwrites during field servicing.

Use Value: Automatic Page 0 read enables immediate UI boot without host CPU intervention; 10-year data retention ensures log integrity across equipment service life.

Use Scenario: Captures time-stamped physiological waveforms (ECG, SpO₂) in battery-powered handheld diagnostic devices with strict power budgets.

IC Role / Device Role: Low-voltage (1.8V) NAND buffer for burst-mode acquisition, leveraging Copy Back to relocate data around failing blocks without draining battery on retransmission.

Use Value: 1.7–1.95 V operation extends battery life vs. 3.3V NAND; 2 ms block erase minimizes acquisition gaps during background garbage collection.

Embedded Network Router Boot

Automotive Infotainment Firmware Cache

Use Scenario: Holds bootloader image and compressed Linux kernel in compact networking appliances where PCB space limits use of parallel NOR or eMMC.

IC Role / Device Role: Primary boot medium interfaced directly to ARM Cortex-A5/A7 SoC via GPIO-banged NAND controller.

Use Value: TSOP48 footprint matches legacy router designs; "Chip Enable Don't Care" reduces SoC pin count and simplifies layout routing.

Use Scenario: Caches map tiles and voice recognition models in head-unit systems requiring fast random read access and robustness against vibration-induced corruption.

IC Role / Device Role: High-endurance (100,000 P/E cycles) firmware cache with hardware WP# to prevent unauthorized firmware modification during CAN-based OTA updates.

Use Value: Open-drain RB# allows daisy-chaining multiple NANDs to single interrupt line - simplifies fault monitoring in multi-chip storage subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT29F4G08ABAEAWP-IT:E	4 Gbit (x8), 3.3V VDD, 20 nm process, ONFI 2.3 interface - requires timing controller and dedicated NAND controller IP	Higher density and faster sequential throughput, but incompatible voltage and interface protocol	Select only when migrating to modern controller platforms with ONFI support and ≥3.0V supply; not drop-in replaceable
TC58NVG2S3ETA00	1 Gbit (x8), 1.8V, TSOP48, Toshiba-compatible command set - identical voltage, package, and pinout; differs in status register bit mapping and RB# timing	Direct hardware replacement with minor firmware adaptation for status polling and error handling	Preferred for second-source qualification where identical 1.8V/TSOP48 form factor and boot capability are mandatory

Compared with MT29F4G08ABAEAWP-IT:E, NAND512W3A0AV6E offers simpler GPIO-banged control and lower system BOM cost; compared with TC58NVG2S3ETA00, it provides tighter integration with ST's ecosystem tools but requires validation of spare-area ECC layout due to differing bad-block management conventions.

Availability

NAND512W3A0AV6E is available at Aetrix Electronics and suitable for industrial HMI storage, portable medical data loggers, and embedded network router boot applications requiring stable component supply and long-term lifecycle assurance.

Supply support for NAND512W3A0AV6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in microcontrollers, power management, sensors, and non-volatile memory solutions for industrial, automotive, and consumer markets.

NAND512W3A0AV6E belongs to ST's legacy NAND Flash family designed for cost-sensitive, low-power embedded systems requiring direct-boot capability, hardware write protection, and TSOP48 footprint compatibility - targeting applications where eMMC or managed NAND is over-engineered.

FAQ

Does NAND512W3A0AV6E support x16 bus width?

No. NAND512W3A0AV6E is an x8 device with I/O0–I/O7 only. The part number suffix "W3A" denotes 1.8V operation and x8 interface; x16 variants in this family use "R3A" or "R4A" suffixes. Attempting x16 operation will result in incorrect command decoding and bus contention.

What is the function of the WP# pin during power-up?

WP# is sampled at power-on reset to determine initial write protection state. If held high during VDD ramp (1.7–1.95 V), all program and erase operations are locked until WP# is actively pulled low. This prevents corruption during unstable power conditions and supports secure firmware update workflows.

Can the Ready/Busy (RB#) pin be connected directly to a microcontroller GPIO without a pull-up resistor?

No. RB# is open-drain and requires an external pull-up resistor (typically 4.7–10 kΩ to VDD) to assert HIGH when idle. Without it, the signal remains floating, causing unreliable status detection and potential bus lockup during read/program sequences.

Is ECC handling required for reliable operation?

Yes. NAND512W3A0AV6E has no on-die ECC; bit errors accumulate with P/E cycling and retention time. ST recommends implementing BCH or Hamming ECC in host firmware or using external ECC controllers. Failure to do so risks silent data corruption, especially in spare-area metadata used for wear leveling.

NAND512W3A0AV6E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: 48-UFSOP (0.606",15.40mm Width)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NAND

Memory Size:: 512Mbit

Memory Organization:: 64M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 50ns

Access Time:: 50 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-WSOP (12x17)

NAND512W3A0AV6E FAQ

1.How can I place an order for NAND512W3A0AV6E through Aetrix?

Please submit a Request for Quotation (RFQ) for NAND512W3A0AV6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NAND512W3A0AV6E reliable?

The price and inventory of NAND512W3A0AV6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND512W3A0AV6E is usually 5 days.

3.What payment methods are accepted for NAND512W3A0AV6E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NAND512W3A0AV6E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NAND512W3A0AV6E?

NAND512W3A0AV6E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NAND512W3A0AV6E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NAND512W3A0AV6E?

For technical support, including NAND512W3A0AV6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND512W3A0AV6E requirements.

6.How does Aetrix verify that NAND512W3A0AV6E is sourced from the original manufacturer or authorized distributors?

All NAND512W3A0AV6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND512W3A0AV6E meets industry standards.

7.What is the process for return or replacement of NAND512W3A0AV6E?

All NAND512W3A0AV6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND512W3A0AV6E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NAND512W3A0AV6E part is unused and in its original packaging.

Return procedure for NAND512W3A0AV6E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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