STMicroelectronics NAND512W3A2BN6E
- Part No.:
- NAND512W3A2BN6E
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
NAND512W3A2BN6E.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 48TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,094
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Product details
Overview
NAND512W3A2BN6E from STMicroelectronics is a 512 Mbit (64 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and VFBGA63 (8.5 × 15 mm, 0.8 mm pitch) package - used in embedded boot storage, portable media players, and industrial data loggers requiring high-density non-volatile storage with automatic Page 0 read at power-up.
For engineers reviewing the NAND512W3A2BN6E datasheet, NAND512W3A2BN6E pinout, NAND512W3A2BN6E application, or NAND512W3A2BN6E equivalent, key selection criteria include 1.8V operation, x8 bus width, 2ms typical block erase time, hardware write protection via WP pin, and support for Copy Back Program mode to reduce controller overhead in bad-block management.
Technical Context
This device implements a standard NAND interface with multiplexed I/O[7:0] for address/data/command transfer, AL/CL control latching, and open-drain RB output for P/E/R status monitoring. It uses floating-gate NAND cell architecture with on-chip high-voltage generation for program/erase operations.
It supports automatic Page 0 read at power-up for boot code loading and Chip Enable 'Don't Care' mode to simplify microcontroller interfacing without external glue logic. The internal status register (SR0–SR7) provides real-time feedback on error, busy, and protection states during all operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (64 MB) organized as 4,096 blocks × 64 pages × 528 bytes/page |
| Bus Width | x8 - single-byte data path; reduces pin count and simplifies PCB routing vs. x16 |
| Page Size | 528 bytes (512 data + 16 spare) - enables ECC metadata storage and wear-leveling tracking |
| Block Size | 16,384 bytes (16K + 512 spare) - defines minimum erasable unit; impacts garbage collection efficiency |
| Supply Voltage | VDD = 1.7–1.95 V - optimized for low-power portable systems; requires tight regulation |
| Block Erase Time | 2 ms (typ) - enables fast firmware updates and field reprogramming |
| Page Program Time | 200 µs (typ) - determines sustained write throughput in sequential logging applications |
| Data Retention | 10 years - guaranteed data integrity under specified temperature and usage conditions |
Pinout & Package
VFBGA63 package: 63-ball fine-pitch grid array (8.5 × 15 mm, 0.8 mm pitch), top-side ball layout per Figure 43, JEDEC MO-245 compliant, suitable for high-density PCB designs with thermal and mechanical reliability requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O[7:0] | Multiplexed Data/Address/Command | Shared bus for all transfers; requires AL/CL timing control to latch address/command vs. data |
| AL | Address Latch Enable | Strobes lower address bits into internal latch during command/address phase |
| CL | Command Latch Enable | Strobes command byte (e.g., 0x00, 0x30) into command register |
| E | Chip Enable | Active-low chip select; supports 'Don't Care' mode for simplified microcontroller interface |
| R | Read Enable | Controls data output timing during read cycles; must meet tREA setup/hold requirements |
| W | Write Enable | Controls data input timing during program/erase; critical for meeting tWP pulse width |
| WP | Write Protect | Hardware lock: low = program/erase disabled; prevents accidental corruption during power transitions |
| RB | Ready/Busy | Open-drain output indicating P/E/R controller activity; shared across multiple devices with pull-up |
| VDD | Supply Voltage | 1.7–1.95 V core supply; decoupling required within 1 cm of VDD/VSS pair |
| VSS | Ground | Digital ground reference; separate analog/digital grounding not required |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Page 0 Read at Power-Up | Enables direct boot execution from NAND without external ROM or SPI flash - reduces BOM cost and board space |
| Copy Back Program Mode | Permits intra-device page relocation without host data retransmission - cuts system-level latency during bad-block remapping |
| Chip Enable 'Don't Care' Option | Allows E pin to float or tie-high during normal operation - eliminates need for GPIO control in simple microcontroller interfaces |
| Hardware Data Protection | Internal lock during VDD ramp-up/down prevents partial writes/erases - ensures data integrity across power cycles |
| Status Register Monitoring | SR0 (error), SR6 (P/E/R busy), SR7 (write-protected) provide real-time operational state - enables deterministic firmware flow control |
Applications
| Embedded Boot Storage | Portable Media Player |
|---|---|
Use Scenario: Storing bootloader and kernel image for ARM-based industrial controllers with no external NOR flash. IC Role / Device Role / Timing Role: Primary non-volatile boot medium; accessed via memory-mapped NAND controller with automatic Page 0 fetch at reset. Use Value: Eliminates dedicated boot ROM; leverages 10-year data retention and 100K P/E cycles for field-upgradable firmware. | Use Scenario: User-accessible storage for MP3/WMA files in handheld audio devices with USB mass-storage interface. IC Role / Device Role / Timing Role: Mass storage backend managed by FAT32-aware file system with integrated ECC and wear leveling. Use Value: 2ms block erase and 200µs page program enable responsive track switching and playlist updates. |
| Industrial Data Logger | Telematics Black Box |
Use Scenario: Cyclic logging of sensor readings (temperature, pressure, GPS) in oil-field monitoring equipment operating at -40°C to +85°C. IC Role / Device Role / Timing Role: High-reliability circular buffer storage with hardware WP pin enabled during power brownout events. Use Value: 1.8V operation minimizes power draw; 100K endurance supports >5 years of daily 100MB logging. | Use Scenario: Crash-event capture in automotive telematics units, storing pre/post-impact CAN and IMU data. IC Role / Device Role / Timing Role: Fault-tolerant event recorder using Copy Back mode to relocate corrupted pages before overwrite. Use Value: Automatic Page 0 read ensures immediate boot after crash recovery; RB signal synchronizes host DMA transfers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F512G08CFAAAWP-IT:F | 512Gb (64GB) density, 3.3V supply, ONFI 3.2 interface, 16KB page | Targeted at high-throughput SSDs and eMMC replacements - not pin- or command-compatible | Select only if migrating to ONFI-standard controllers and higher capacity; requires full firmware rewrite. |
| TC58NVG2S3ETA00 | 1Gb (128MB) density, 3.3V supply, x8/x16 selectable, 2KB page | Designed for legacy Toshiba-based systems; larger page increases ECC overhead but improves sequential speed | Choose when replacing existing TC58NVG2S3-based designs; verify compatibility with existing AL/CL timing margins. |
Compared with MT29F512G08CFAAAWP-IT:F and TC58NVG2S3ETA00, NAND512W3A2BN6E offers optimal balance of 1.8V ultra-low-power operation, proven TSOP/VFBGA footprint compatibility, and boot-ready features - making it ideal for cost-sensitive, battery-powered embedded systems where power, footprint, and boot simplicity are prioritized over raw bandwidth.
Availability
NAND512W3A2BN6E is available at Aetrix Electronics and suitable for embedded boot storage, portable media players, and industrial data loggers requiring stable component supply throughout product lifecycle.
Supply support for NAND512W3A2BN6E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering microcontrollers, memories, power ICs, and sensors for industrial, automotive, and consumer markets.
This part belongs to ST's NAND128-A/NAND512-A family - designed specifically for cost-effective, high-reliability mass storage in resource-constrained embedded systems with minimal external logic.
FAQ
Does NAND512W3A2BN6E support x16 bus width?
No. NAND512W3A2BN6E is an x8-only device, as indicated by the 'W' in the part number (per Table 28: W = x8, R = x16). Its I/O[7:0] pins implement an 8-bit multiplexed bus for address, command, and data - requiring no x16 configuration or pin strapping. Attempting x16 operation will result in undefined behavior.
What is the function of the Chip Enable 'Don't Care' option?
The Chip Enable 'Don't Care' option allows the E pin to remain unconnected or tied high during normal operation, eliminating the need for active chip-select control from the host processor. This simplifies interface design in microcontroller-based systems with limited GPIO resources, while maintaining full command functionality via AL/CL timing alone.
How does the Copy Back Program mode improve system reliability?
Copy Back Program enables reading a page and writing it to another location within the same device without transferring data through the host. This avoids data loss during bad-block remapping, reduces host CPU load, and shortens interrupt latency - especially critical in real-time logging or boot scenarios where host intervention cannot be guaranteed during power events.
Is external ECC hardware required for NAND512W3A2BN6E?
Yes. While the device includes 16 spare bytes per 512-byte page for ECC metadata, it does not perform on-die error correction. Host-side ECC (e.g., BCH 4-bit or stronger) must be implemented in the controller or SoC to detect and correct bit errors - essential for achieving the rated 100,000 program/erase cycles and 10-year data retention.
NAND512W3A2BN6E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 50ns
- Access Time:
- 50 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
NAND512W3A2BN6E FAQ
1.How can I place an order for NAND512W3A2BN6E through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND512W3A2BN6E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND512W3A2BN6E reliable?
The price and inventory of NAND512W3A2BN6E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND512W3A2BN6E is usually 5 days.
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Once your NAND512W3A2BN6E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND512W3A2BN6E?
For technical support, including NAND512W3A2BN6E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND512W3A2BN6E requirements.
6.How does Aetrix verify that NAND512W3A2BN6E is sourced from the original manufacturer or authorized distributors?
All NAND512W3A2BN6E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND512W3A2BN6E meets industry standards.
7.What is the process for return or replacement of NAND512W3A2BN6E?
All NAND512W3A2BN6E units undergo pre-shipment inspection (PSI). If there is an issue with NAND512W3A2BN6E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND512W3A2BN6E part is unused and in its original packaging.
Return procedure for NAND512W3A2BN6E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND512W3A2BN6E Tags

-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
Microchip Technology

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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
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Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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