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STMicroelectronics NAND512W3A2BN6F
- Part No.:
- NAND512W3A2BN6F
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
NAND512W3A2BN6F.pdf
- Description:
- IC FLASH 512MBIT PARALLEL 48TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,333
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Product details
Overview
NAND512W3A2BN6F from STMicroelectronics is a 512 Mbit (64 MB) x8 NAND Flash memory with 1.8V supply, 528-byte page size (512 data + 16 spare), 16 KB block size (16K + 512 spare), and VFBGA63 (8.5 × 15 mm, 0.8 mm pitch) package - designed for embedded boot storage and mass data logging in portable industrial controllers.
For engineers reviewing the NAND512W3A2BN6F datasheet, NAND512W3A2BN6F pinout, NAND512W3A2BN6F application, or NAND512W3A2BN6F equivalent, key selection criteria include page read timing (12 µs max random access), block erase time (2 ms typ), hardware write protection (WP pin), automatic Page 0 read at power-up for boot support, and Copy Back Program mode for defect-tolerant firmware updates.
Technical Context
This device implements a true NAND architecture with multiplexed I/O (x8 bus width), requiring command/address/data sequencing via AL/CL/W/R control signals. It uses an open-drain Ready/Busy (RB) output to signal internal P/E/R controller activity without blocking host bus access.
The memory array is organized into 4,096 blocks of 32 pages each, supporting 100,000 program/erase cycles and 10-year data retention. It includes a status register (SR0–SR7) with dedicated bits for error detection (SR0), write protection lock (SR7), and controller busy state (SR6).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mbit (64 MB) organized as 4,096 blocks × 32 pages × 528 bytes/page |
| Bus Width | x8 interface with multiplexed address/data on I/O0–I/O7 pins |
| Supply Voltage | 1.8V operation (VDD = 1.7–1.95 V); supports low-power portable designs |
| Page Size | 528 bytes (512 data + 16 spare bytes) - enables ECC coverage per page |
| Block Size | 16,384 bytes (16 KB) + 512 spare bytes - defines minimum erase granularity |
| Page Read Time | 12 µs max random access; 50 ns min sequential read - critical for boot latency |
| Block Erase Time | 2 ms typical - enables fast field firmware updates and wear leveling |
Pinout & Package
VFBGA63 package: 8.5 × 15 mm body, 0.8 mm ball pitch, 6 × 8 active ball array (63 total balls), 1.0 mm height - optimized for space-constrained industrial PCBs with automated assembly compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| I/O0–I/O7 | Multiplexed Data/Address Bus | Carries commands, addresses, and data under AL/CL/W/R control; eliminates separate address pins |
| AL (Address Latch Enable) | Address Capture Strobe | Latches column/row address during address phase; enables compact controller interface |
| CL (Command Latch Enable) | Command Capture Strobe | Latches command byte (e.g., 0x00 for read, 0x80 for program); defines operation mode |
| W (Write Enable) | Write Control Input | Active-low strobe for data/command/address loading; synchronous with AL/CL |
| R (Read Enable) | Read Control Input | Active-low strobe enabling data output onto I/O bus; used in read and status cycles |
| E (Chip Enable) | Device Selection | Active-low chip select; supports "don't care" mode for simplified microcontroller interfacing |
| WP (Write Protect) | Hardware Lock Input | Prevents accidental program/erase during power transitions; latched internally |
| RB (Ready/Busy) | Open-Drain Status Output | Low during P/E/R operations; allows wired-OR connection of multiple NAND devices |
| VDD | Core Supply | 1.7–1.95 V input; powers logic and memory array; requires local decoupling |
| VSS | Ground Reference | Common return path for all signals and core current; must be low-impedance |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Page 0 Read at Power-Up | Enables direct boot execution from NAND without external loader; reduces BOM count |
| Copy Back Program Mode | Permits intra-device page relocation without host retransmission - essential for bad-block remapping |
| Chip Enable 'Don't Care' Option | Allows E pin to float or tie-high; simplifies interface to microcontrollers lacking dedicated chip-select lines |
| Electronic Signature Read | Provides manufacturer ID (0x20), device ID (0xDA), and extended ID - enables runtime device validation |
| Status Register Monitoring | Real-time visibility into P/E/R progress (SR6), write lock status (SR7), and ECC error flag (SR0) |
Applications
| Industrial PLC Firmware Storage | Medical Device Log Buffer |
|---|---|
Use Scenario: Storing firmware images and configuration parameters in DIN-rail mounted programmable logic controllers with no external NOR flash. IC Role / Device Role / Timing Role: Primary boot memory delivering Page 0 on power-up; handles field firmware updates via block erase and page program. Use Value: 2 ms block erase and Copy Back mode reduce update downtime; 100K endurance ensures >10 years of daily field upgrades. |
Use Scenario: Capturing real-time sensor logs (ECG, SpO₂) in battery-powered diagnostic handhelds where power loss is frequent. IC Role / Device Role / Timing Role: High-reliability data logger using spare area for metadata and ECC; WP pin prevents corruption during brown-out. Use Value: Hardware write protection and 10-year data retention guarantee log integrity across device lifecycle without backup power. |
| Automotive Infotainment OS Image | Smart Meter Firmware Vault |
Use Scenario: Hosting compressed Linux kernel and rootfs in automotive head units requiring AEC-Q100-compliant storage. IC Role / Device Role / Timing Role: Mass storage backend for eMMC-like boot partition; leverages automatic Page 0 read and RB signaling for deterministic startup. Use Value: 12 µs random read latency meets boot timing budgets; VFBGA63 package withstands thermal cycling in dashboard environments. |
Use Scenario: Securing firmware and tariff tables in utility smart meters deployed in unattended outdoor enclosures. IC Role / Device Role / Timing Role: Tamper-resistant firmware vault using electronic signature verification and status register error detection. Use Value: SR0 error bit flags bit-flips before data commit; combined with ECC, achieves FIT rate suitable for 15-year field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F512G08CFAAAWP-IT | 512 Gbit (not Mbit); ONFI 3.2 interface; 3.3V supply; 208-ball TSOP | Targeted at high-throughput SSDs, not embedded boot; incompatible voltage and protocol | Select only for scalable storage architectures requiring ONFI compliance and higher density |
| TC58NVG2S3ETA00 | 1 Gbit x8; 3.3V supply; 48-pin TSOP; lacks automatic Page 0 read and CE don't-care | Requires external bootloader; less suited for direct-boot microcontroller integration | Choose when legacy 3.3V systems demand pin-compatible replacement without boot feature dependency |
Compared with MT29F512G08CFAAAWP-IT and TC58NVG2S3ETA00, NAND512W3A2BN6F uniquely balances 1.8V ultra-low power, VFBGA63 footprint efficiency, and boot-critical features (Page 0 auto-read, CE don't-care) - making it optimal for space- and power-constrained embedded controllers where firmware reliability is non-negotiable.
Availability
NAND512W3A2BN6F is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device log buffering, and automotive infotainment OS image hosting requiring stable component supply across multi-year production cycles.
Supply support for NAND512W3A2BN6F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader specializing in microcontrollers, power management, and non-volatile memory solutions for industrial, automotive, and consumer markets.
This part belongs to ST's NAND128-A/NAND512-A family - engineered specifically for cost-sensitive, high-reliability embedded boot and data logging applications where small-footprint, low-voltage NAND Flash is required.
FAQ
Does NAND512W3A2BN6F support true x16 bus width?
No. NAND512W3A2BN6F is strictly an x8 device - its I/O0–I/O7 pins handle all command, address, and data transfers in multiplexed mode. The 'W' in the part number denotes 1.8V operation, not bus width; x16 variants in this family use distinct part numbers (e.g., NAND512R3A). Confusion arises from shared family naming, but electrical and timing specifications confirm x8-only interface.
What is the function of the '2BN6F' suffix in NAND512W3A2BN6F?
The '2BN6F' suffix encodes package and temperature grade: '2B' indicates VFBGA63 package (8.5 × 15 mm), 'N6' specifies industrial temperature range (–40°C to +85°C), and 'F' denotes lead-free (RoHS-compliant) finish. This matches STMicroelectronics' official ordering scheme in Table 28 of the preliminary datasheet.
Can the Ready/Busy (RB) pin drive multiple NAND devices in parallel?
Yes - RB is an open-drain output designed for wired-OR connection. Multiple NAND512W3A2BN6F devices can share a single pull-up resistor on one RB line, allowing a microcontroller to monitor collective readiness. This is explicitly supported per Figure 37 and the "open-drain" specification in Signal Descriptions (page 16).
Is Error Correction Code (ECC) implemented internally or externally?
ECC is not implemented internally. The device provides 16 spare bytes per 512-byte page expressly for external ECC algorithms - as stated in Section 1 ("FEATURES SUMMARY") and Software Algorithms (page 29). System designers must implement BCH or Hamming code in host controller or companion ASIC; no on-die ECC engine exists.
NAND512W3A2BN6F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND
- Memory Size:
- 512Mbit
- Memory Organization:
- 64M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 50ns
- Access Time:
- 50 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
NAND512W3A2BN6F FAQ
1.How can I place an order for NAND512W3A2BN6F through Aetrix?
Please submit a Request for Quotation (RFQ) for NAND512W3A2BN6F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NAND512W3A2BN6F reliable?
The price and inventory of NAND512W3A2BN6F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NAND512W3A2BN6F is usually 5 days.
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4.How is shipping managed for NAND512W3A2BN6F?
NAND512W3A2BN6F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NAND512W3A2BN6F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NAND512W3A2BN6F?
For technical support, including NAND512W3A2BN6F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NAND512W3A2BN6F requirements.
6.How does Aetrix verify that NAND512W3A2BN6F is sourced from the original manufacturer or authorized distributors?
All NAND512W3A2BN6F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NAND512W3A2BN6F meets industry standards.
7.What is the process for return or replacement of NAND512W3A2BN6F?
All NAND512W3A2BN6F units undergo pre-shipment inspection (PSI). If there is an issue with NAND512W3A2BN6F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NAND512W3A2BN6F part is unused and in its original packaging.
Return procedure for NAND512W3A2BN6F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NAND512W3A2BN6F Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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