onsemi NCP114AMX210TCG

Overview

NCP114AMX210TCG from onsemi is a 300 mA CMOS low-dropout linear regulator with fixed 2.1 V output, 135 mV typical dropout at 300 mA, ±1% output accuracy, and active output discharge function-designed for noise-sensitive portable applications including smartphones and Bluetooth modules where stable low-noise power delivery under light-load conditions is critical.

For engineers reviewing the NCP114AMX210TCG datasheet, pinout, applications, or equivalent options, key selection factors include its 50 µA typical quiescent current, 75 dB PSRR at 1 kHz, UDFN4 1×1 mm package with exposed pad, thermal shutdown and current limit protection, and compatibility with 1 µF ceramic output capacitors.

Technical Context

The NCP114AMX210TCG employs a PMOS pass transistor architecture enabling ultra-low quiescent current via dynamic IQ adjustment, and integrates an active discharge MOSFET (100 Ω typical) activated during shutdown to rapidly discharge the output capacitor. Its bandgap reference and error amplifier deliver ±1% output voltage accuracy across −40°C to +85°C.

Designed for battery-powered systems, it operates from 1.7 V to 5.5 V input, supports 2.1 V fixed output, and maintains stability with minimal 1 µF X5R/X7R ceramic output capacitance-no ESR requirement-while providing 75 dB power supply ripple rejection at 1 kHz and 70 µV_RMS output noise (10 Hz–100 kHz).

Key Specifications

Pinout & Package

Package: UDFN4 (1.0 mm × 1.0 mm, 0.65 mm pitch), Pb-free, with exposed thermal pad (EPAD) requiring direct connection to GND for optimal thermal performance (R_JA = 170°C/W on 1 oz FR4 with 645 mm² copper area).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TPS7A0521PDBVR and MCP1826T-2.102E/DB, the NCP114AMX210TCG uniquely combines 300 mA output, 50 µA IQ, and integrated active discharge in a 1×1 mm UDFN4 package-enabling smaller footprints, longer battery life, and simplified power sequencing in space-constrained portable designs.

Availability

NCP114AMX210TCG is available at Aetrix Electronics and suitable for smartphone baseband power, Bluetooth LE audio modules, and portable medical sensor hubs requiring stable component supply with guaranteed long-term manufacturability and consistent parametric performance.

Supply support for NCP114AMX210TCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and edge applications.

The NCP114 product line targets ultra-low-power, noise-sensitive portable electronics-designed specifically for battery-operated devices needing high PSRR, sub-100 µA quiescent current, and compact packaging without sacrificing protection or stability.

FAQ

What is the output voltage tolerance of the NCP114AMX210TCG over temperature?

The NCP114AMX210TCG provides ±1% output voltage accuracy at room temperature. Over the full operating junction temperature range (−40°C to +85°C), the output voltage deviation remains within ±2% for V_OUT > 2.0 V per the datasheet's Electrical Characteristics table-ensuring reliable operation in consumer and industrial portable environments without external trimming.

Does the NCP114AMX210TCG require an external resistor network to set the output voltage?

No, the NCP114AMX210TCG is a fixed-output LDO with factory-trimmed 2.1 V regulation. It contains an internal precision bandgap reference and feedback divider, eliminating the need for external resistors. This simplifies layout, reduces component count, and improves long-term stability compared to adjustable LDOs.

Can the NCP114AMX210TCG operate with a 1.8 V input supply?

No-the minimum input voltage for the NCP114AMX210TCG is 1.7 V, but with a 2.1 V output and typical dropout of 140 mV at 300 mA, the absolute minimum functional input is ~2.24 V. At 1.8 V input, the device enters dropout and cannot regulate; it will either shut down or deliver unregulated, degraded output depending on load and temperature.

Is the active output discharge feature present in all NCP114 variants?

No-the active output discharge function is exclusive to "A" suffix versions like the NCP114AMX210TCG. "B" suffix variants (e.g., NCP114BMX210TCG) omit this feature. The datasheet explicitly states that active discharge is present *only* in NCP114AMXyyyTCG devices, with R_DIS = 100 Ω typical when EN < 0.4 V.

What is the recommended PCB layout practice for thermal management of the NCP114AMX210TCG?

For optimal thermal performance, the exposed pad (EPAD) of the NCP114AMX210TCG must be soldered directly to a large GND copper plane using ≥4 thermal vias (0.3 mm diameter) spaced evenly beneath the pad. The datasheet specifies R_JA = 170°C/W on 1 oz FR4 with 645 mm² copper area-reducing copper area or omitting vias significantly degrades thermal resistance and risks thermal shutdown under sustained 300 mA loads.