onsemi NCP120AMX110TCG

Overview

NCP120AMX110TCG from onsemi is a 150 mA very low dropout (VLDO) CMOS voltage regulator with NMOS pass transistor and separate bias rail (VBIAS), delivering a fixed 1.10 V output. It achieves ±1.5% accuracy over −40°C to +85°C, 75 mV max dropout at 150 mA, and ultra-low 80 µA typical bias current-designed for noise-sensitive, space-constrained portable electronics requiring stable low-voltage bias rails.

For engineers reviewing the NCP120AMX110TCG datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-rail architecture (VIN/VBIAS), active output discharge capability, XDFN6 1.2 mm × 1.2 mm package footprint, and compatibility with 1 µF ceramic output capacitors in battery-powered I/O and processor core post-regulation.

Technical Context

The NCP120AMX110TCG implements a dual-input NMOS-based LDO architecture: VIN supplies the pass element while VBIAS powers internal control circuitry-including reference, error amplifier, and enable logic-enabling independent optimization of power efficiency and regulation stability. Its under-voltage lockout (UVLO) triggers at 1.6 V on VBIAS with 0.2 V hysteresis, ensuring reliable startup only when bias supply meets minimum headroom requirements.

Unlike PMOS LDOs, the NMOS topology decouples loop stability from output capacitor ESR, allowing stable operation with low-ESR 1 µF ceramic capacitors without external compensation. The device supports monotonic start-up with controlled slew rate and includes thermal shutdown (160°C trip, 140°C release) and current limiting (200–600 mA) for robust fault protection in compact portable systems.

Key Specifications

Pinout & Package

The NCP120AMX110TCG is housed in an XDFN6 package (Case 711AT), measuring 1.2 mm × 1.2 mm × 0.4 mm with a bottom thermal pad soldered to PCB ground for enhanced thermal performance (R_JA = 170°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, dual-rail LDO applications.

Compared with XC6210B112MR-G and RT9080L-11PUF, the NCP120AMX110TCG uniquely supports dual-rail operation and active output discharge-critical for power sequencing in modern mobile SoCs-while maintaining ultra-low noise and minimal footprint in XDFN6.

Availability

NCP120AMX110TCG is available at Aetrix Electronics and suitable for smartphone I/O regulation, tablet camera sensor biasing, wearable analog front-ends, and STB HDMI transmitter core supply requiring stable component supply and long-term lifecycle support.

Supply support for NCP120AMX110TCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NCP120 series targets ultra-low-power, noise-sensitive portable electronics-specifically engineered to replace legacy single-rail LDOs with dual-rail architectures that improve efficiency, reduce noise coupling, and simplify power sequencing in multi-voltage SoC platforms.

FAQ

What is the output voltage tolerance of the NCP120AMX110TCG over temperature?

The NCP120AMX110TCG delivers ±1.5% output voltage accuracy across the full operating junction temperature range of −40°C to +85°C. At 25°C, the tolerance tightens to ±0.5%, verified by production testing and characterized in the Electrical Characteristics table of the official datasheet. This precision ensures reliable operation for 1.10 V I/O domains without external trimming or calibration.

Does the NCP120AMX110TCG support active output discharge, and how is it controlled?

Yes, the NCP120AMX110TCG ('A' suffix) includes integrated active output discharge. When the EN pin is driven low (≤0.4 V), an internal 150 Ω pull-down connects OUT to GND, discharging the output capacitor rapidly. This feature is absent in 'B'-suffix variants. The discharge path is enabled automatically on disable and requires no external components-critical for power sequencing compliance in mobile SoCs.

What is the minimum required VBIAS voltage for the NCP120AMX110TCG to operate correctly?

The NCP120AMX110TCG requires VBIAS ≥ (VOUT + 1.35 V), i.e., ≥2.45 V for its 1.10 V output, and also within the absolute range of 2.4 V to 5.5 V. Below this threshold, the internal UVLO circuit disables regulation-even if VIN is valid-ensuring stable internal circuitry operation before enabling the output. This guardband prevents erratic behavior during bias rail ramp-up.

Can the NCP120AMX110TCG be used with a 1 µF ceramic output capacitor, and why is this significant?

Yes, the NCP120AMX110TCG is fully stable with a 1 µF ceramic output capacitor-verified across temperature, voltage, and load conditions. This eliminates the need for larger, higher-ESR tantalum or aluminum electrolytic capacitors, reducing PCB area, cost, and failure risk. The NMOS topology inherently decouples stability from capacitor ESR, enabling robust performance in ultra-compact layouts like smartphone camera modules.

What thermal protection features does the NCP120AMX110TCG include, and how do they behave?

The NCP120AMX110TCG integrates thermal shutdown with a 160°C trip point and 140°C hysteresis. When junction temperature exceeds 160°C, the regulator disables output and enters thermal shutdown; it automatically resumes regulation once temperature falls below 140°C. This auto-recovery behavior protects against transient overloads without requiring system-level intervention-essential for sealed wearable and handheld enclosures.