onsemi NCP120BMX115TCG

Overview

NCP120BMX115TCG from onsemi is a 150 mA very low dropout (VLDO) CMOS voltage regulator with NMOS pass transistor and separate VBIAS supply, delivering a fixed 1.15 V output with ±1.5% accuracy over −40°C to +85°C, 75 mV max dropout at 150 mA, and ultra-low 80 µA typical bias current - designed for noise-sensitive, space-constrained portable applications such as smartphone I/O rails and camera sensor power.

For engineers reviewing the NCP120BMX115TCG datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-rail architecture (VIN/VBIAS), active-discharge exclusion (B-suffix), XDFN6 package thermal performance, and compatibility with 1 µF ceramic output capacitance in battery-powered systems.

Technical Context

The NCP120BMX115TCG implements a dual-input NMOS-based LDO architecture where VIN supplies the pass element and VBIAS powers internal control circuitry independently - enabling stable regulation even when VIN approaches VOUT. Its UVLO monitors VBIAS with 1.6 V threshold and 0.2 V hysteresis, ensuring reliable startup under varying bias conditions.

Unlike PMOS LDOs, this topology decouples output capacitor ESR sensitivity from loop stability and supports monotonic start-up with controlled slew rate. The absence of active output discharge (denoted by 'B' suffix) distinguishes it from 'A'-suffix variants, making it suitable for systems requiring hold-up or isolation during shutdown.

Key Specifications

Pinout & Package

XDFN6 package (Case 711AT), 1.2 mm × 1.2 mm × 0.4 mm, with exposed thermal pad soldered to PCB ground plane for optimal thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise, dual-rail LDO applications.

Compared with NCP120AMX115TCG, the NCP120BMX115TCG eliminates active discharge for safer shutdown behavior; versus TPL7407LDR, it delivers superior PSRR and lower IQ by leveraging dedicated VBIAS, making it optimal for noise-critical, battery-sensitive applications.

Availability

NCP120BMX115TCG is available at Aetrix Electronics and suitable for smartphone I/O power, CMOS image sensor bias, portable DVR core logic, STB memory interface, and other applications requiring stable component supply with tight DC accuracy and ultra-low noise.

Supply support for NCP120BMX115TCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient silicon solutions for automotive, industrial, cloud, medical, and portable electronics.

The NCP120 series targets ultra-low-noise, space-constrained portable power management - specifically engineered for post-regulation of battery or DC/DC outputs in smartphones, cameras, and IoT edge devices.

FAQ

What is the output voltage tolerance of the NCP120BMX115TCG over temperature?

The NCP120BMX115TCG provides ±1.5% output voltage accuracy across the full operating junction temperature range of −40°C to +85°C. At 25°C, the tolerance tightens to ±0.5%, ensuring high precision for sensitive analog or mixed-signal loads. This specification is verified per the Electrical Characteristics table in the official onsemi datasheet revision 4 (August 2024), with test conditions including VBIAS ≥ (VOUT + 1.35 V) and 1 mA ≤ IOUT ≤ 150 mA.

Does the NCP120BMX115TCG support active output discharge?

No, the NCP120BMX115TCG does not include active output discharge functionality. The 'B' suffix explicitly denotes the non-active-discharge variant, unlike the 'A'-suffix NCP120AMX115TCG which integrates a 150 Ω internal pull-down. This design choice prevents unintended discharge of downstream capacitance during shutdown - critical for retaining state in memory-mapped peripherals or interface circuits powered by the NCP120BMX115TCG.

What is the minimum required output capacitance for stability with the NCP120BMX115TCG?

The NCP120BMX115TCG is stable with a minimum effective output capacitance of 1 µF using ceramic capacitors. This value accounts for DC bias, temperature, and tolerance effects - meaning the actual nominal capacitor may need to be larger (e.g., 2.2 µF X5R) to ensure ≥1 µF effective capacitance under worst-case conditions. No ESR requirements or external compensation components are needed, simplifying layout for compact portable designs.

Can the NCP120BMX115TCG operate with VIN below 1.15 V?

No, the NCP120BMX115TCG cannot regulate with VIN below its output voltage. Its minimum operating input voltage is defined as VOUT + VDO, where VDO is up to 75 mV at 150 mA. Therefore, the absolute minimum VIN is 1.15 V + 0.075 V = 1.225 V. Attempting to operate below this violates the dropout specification and results in unregulated output - confirmed in the Absolute Maximum Ratings and Electrical Characteristics sections of the onsemi NCP120 datasheet.

What package type and dimensions does the NCP120BMX115TCG use?

The NCP120BMX115TCG uses the XDFN6 package (Case 711AT), measuring 1.2 mm × 1.2 mm × 0.4 mm with a 0.4 mm pitch. It features an exposed thermal pad on the bottom that must be soldered to a PCB ground plane to achieve the specified 170 °C/W junction-to-air thermal resistance. Pin 1 is marked by a dot or notch per the top-view diagram in the datasheet, and the marking rotation is 270°.