onsemi NCP130AMX090TCG

Overview

NCP130AMX090TCG from onsemi is a 300 mA very low dropout (VLDO) CMOS voltage regulator with NMOS pass transistor and separate bias rail (VBIAS), delivering fixed 0.90 V output with ±1.5% accuracy over −40°C to +85°C and ultra-low 75 mV typical dropout at 300 mA. It features logic-level enable control, active output discharge, and stable operation with only 1 µF ceramic output capacitor-designed for space-constrained, noise-sensitive portable power rails such as smartphone core I/O supplies.

For engineers reviewing the NCP130AMX090TCG datasheet, pinout, applications, or equivalent options, key selection considerations include its dual-rail architecture (VIN/VBIAS), 80 µA typical bias current, 150 µs turn-on time, PSRR of 65 dB (VIN) and 80 dB (VBIAS), and thermal shutdown at 160°C-critical for battery-powered SoC post-regulation and low-voltage FPGA I/O domains.

Technical Context

The NCP130AMX090TCG implements a dual-input NMOS-based VLDO architecture: VIN supplies the pass element while VBIAS powers internal control circuitry, enabling independent optimization of dropout and bias efficiency. Its UVLO hysteresis on VBIAS (1.6 V threshold, 0.2 V hysteresis) ensures robust startup under varying bias conditions.

It integrates active output discharge (enabled only in "A" variant), thermal shutdown (160°C trip, 140°C release), and current limiting (400–850 mA). The device achieves monotonic start-up and maintains stability with 1 µF ceramic COUT without requiring ESR tuning-leveraging NMOS topology advantages over PMOS for reduced capacitor sensitivity.

Key Specifications

Pinout & Package

Package: XDFN6 (Case 711AT), 1.2 mm × 1.2 mm × 0.37 mm, thermally enhanced with exposed pad soldered to GND plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-dropout linear regulator applications.

Compared with XC6210B092MR-G and RT9080-09GB, the NCP130AMX090TCG uniquely supports dual-rail operation with sub-100 mV dropout and 80 dB VBIAS PSRR-making it optimal for noise-critical, space-constrained, and deep-discharge battery systems where bias supply independence and fast sequencing are mandatory.

Availability

NCP130AMX090TCG is available at Aetrix Electronics and suitable for smartphone I/O regulation, wearable sensor hub power, low-voltage FPGA I/O banks, and USB-C PD sink controller biasing requiring stable component supply, consistent marking, and long-term lifecycle support.

Supply support for NCP130AMX090TCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.

The NCP130AMX090TCG belongs to onsemi's precision low-noise VLDO family, engineered specifically for battery-powered portable electronics requiring ultra-low dropout, dual-rail flexibility, and minimal PCB footprint in 1.2 mm × 1.2 mm XDFN6 packaging.

FAQ

What is the output voltage tolerance of the NCP130AMX090TCG over temperature?

The NCP130AMX090TCG delivers ±1.5% output voltage accuracy across the full operating junction temperature range of −40°C to +85°C. At 25°C, the tolerance tightens to ±0.5%. This specification is guaranteed under defined test conditions: VBIAS ≥ (VOUT + 1.6 V), VIN = VOUT(NOM) + 0.3 V, and load current between 1 mA and 300 mA. The NCP130AMX090TCG uses laser-trimmed internal feedback to achieve this precision without external components.

Does the NCP130AMX090TCG require an external capacitor on the BIAS pin?

Yes, the NCP130AMX090TCG requires a minimum 0.1 µF ceramic capacitor between the BIAS pin and GND. This capacitor stabilizes the internal bias supply and improves PSRR performance, especially at high frequencies. The datasheet specifies CBIAS ≥ 0.1 µF (ceramic, X5R/X7R), placed as close as possible to the BIAS and GND pins. Without it, the NCP130AMX090TCG may exhibit increased noise or instability under dynamic load conditions.

Is active output discharge enabled by default on the NCP130AMX090TCG?

Yes, active output discharge is enabled by default on the NCP130AMX090TCG because it belongs to the "A" variant series (denoted by "A" in NCP130A). When the EN pin is driven low, an internal NMOS switch connects OUT to GND, discharging the output capacitor rapidly. This feature is absent in "B" variants (e.g., NCP130BMX090TCG). The NCP130AMX090TCG's discharge resistance is specified as 150 Ω typical, ensuring controlled discharge without excessive peak current.

What is the minimum input voltage required for the NCP130AMX090TCG to regulate at 300 mA?

The minimum input voltage for the NCP130AMX090TCG to maintain regulation at 300 mA is VOUT + VDO = 0.90 V + 0.15 V = 1.05 V (using the maximum dropout of 150 mV). In practice, the typical dropout is 75 mV, so VIN ≥ 0.975 V suffices. However, the absolute minimum VIN rating is −0.3 V, and the device requires VIN ≥ VOUT + VDO while staying within the 0.8 V to 5.5 V operational range. Below 0.975 V, the NCP130AMX090TCG enters dropout and output voltage declines linearly with VIN.

Can the NCP130AMX090TCG operate with VBIAS lower than VIN?

Yes, the NCP130AMX090TCG is explicitly designed to operate with VBIAS independent of and potentially lower than VIN-as long as VBIAS meets its minimum requirement of ≥2.4 V and ≥(VOUT + 1.35 V) = 2.25 V. For the NCP130AMX090TCG, VBIAS must be ≥2.4 V. This decoupling allows system architects to source VBIAS from a clean, stable rail (e.g., 2.8 V or 3.3 V) while VIN varies widely (e.g., 0.9–4.2 V from a Li-ion battery), a key advantage of its dual-rail architecture.