onsemi NCP163BFCT180T2G

Overview

NCP163BFCT180T2G from onsemi is a 250 mA ultra-low-noise, high-PSRR LDO regulator with fixed 1.8 V output, 80 mV dropout at full load, 6.5 µV_RMS output noise, and 92 dB PSRR at 1 kHz-designed for RF and analog circuits in smartphones and wireless LAN devices.

For engineers reviewing the NCP163BFCT180T2G datasheet, pinout, applications, or equivalent options, key selection criteria include dropout voltage under 250 mA load, active discharge absence (non-A version), WLCSP4 package footprint, thermal shutdown threshold at 160°C, and compatibility with 1 µF ceramic input/output capacitors.

Technical Context

The NCP163BFCT180T2G uses a PMOS pass transistor architecture enabling low dropout and reverse-current protection via inherent body diode. It integrates bandgap reference, enable logic, thermal shutdown (160°C trip, 140°C reset), and current limiting (700 mA typ.), but excludes active output discharge-distinguishing it from "A" and "C" variants.

Its regulation loop delivers ±2% output accuracy over load and temperature, with line regulation of 0.02%/V and load regulation of 0.001%/mA (WLCSP/XDFN packages). Transient response is optimized for fast load steps (±40 mV deviation at 200 mA/10 µs) and line steps (±1 mV at 1.6 V step).

Key Specifications

Pinout & Package

Package: WLCSP4 (0.64 mm × 0.64 mm × 0.33 mm), Pb-free, halogen-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TPS7A2018PDBVR and NCP163AFCT180T2G, the NCP163BFCT180T2G provides superior PSRR and smallest form factor for space-constrained RF designs, while omitting active discharge to simplify enable control and reduce leakage in always-off states.

Availability

NCP163BFCT180T2G is available at Aetrix Electronics and suitable for smartphone RF modules, wireless LAN baseband subsystems, and medical wearable analog front-ends requiring stable component supply with guaranteed long-term manufacturability.

Supply support for NCP163BFCT180T2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The NCP163 product line targets ultra-low-noise, high-PSRR power management for RF and precision analog circuits-specifically engineered to replace legacy LDOs in next-generation portable and wireless devices.

FAQ

What is the dropout voltage of the NCP163BFCT180T2G at 250 mA load?

The NCP163BFCT180T2G has a typical dropout voltage of 80 mV at 250 mA output current and 1.8 V nominal output. This value is measured when V_OUT drops 100 mV below nominal-enabling reliable operation from input voltages as low as 1.88 V, ideal for single-cell Li-ion battery systems where headroom is constrained.

Does the NCP163BFCT180T2G include active output discharge?

No, the NCP163BFCT180T2G does not include active output discharge. The "B" suffix denotes the non-active-discharge variant. When disabled via the EN pin, the output floats rather than being pulled to GND through an internal 280 Ω resistor-unlike the "A" or "C" versions. This simplifies sequencing in systems where uncontrolled discharge could interfere with downstream circuitry.

What package type is used by the NCP163BFCT180T2G?

The NCP163BFCT180T2G uses the WLCSP4 (Wafer-Level Chip-Scale Package) with dimensions 0.64 mm × 0.64 mm × 0.33 mm. It features four solder bumps (IN, OUT, EN, GND) and an exposed thermal pad (EPAD) that must be connected to the PCB ground plane to achieve the specified R_JA of 108 °C/W.

What is the output voltage noise specification for the NCP163BFCT180T2G?

The NCP163BFCT180T2G delivers 6.5 µV_RMS output voltage noise over the 10 Hz to 100 kHz bandwidth, measured at 1 mA load. This ultra-low noise performance is critical for powering RF synthesizers, high-resolution ADCs, and low-phase-noise oscillators where supply-induced jitter directly impacts system-level signal fidelity.

Can the NCP163BFCT180T2G operate with ceramic capacitors smaller than 1 µF?

The NCP163BFCT180T2G is designed to remain stable with a minimum effective output capacitance of 0.7 µF, accounting for DC bias and temperature derating-especially important for small-case 0201/0402 ceramics. While 1 µF is recommended for optimal transient response and PSRR, stable operation is guaranteed down to 0.7 µF with X7R/X5R dielectrics, provided ESR stays below 2 Ω.