onsemi NCP4625HSN12T1G

Overview

NCP4625HSN12T1G from onsemi is a 300 mA, 1.2 V fixed-output CMOS low-dropout linear regulator in SOT-23-5 package, operating from 2.6 V to 10 V input, with 200 mV dropout at 100 mA and ±1% output voltage accuracy over temperature. It features chip enable (active-high), thermal shutdown, current fold-back protection, and stable operation with 1 µF ceramic output capacitors - used in battery-powered imaging modules and portable communication devices.

For engineers reviewing the NCP4625HSN12T1G datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, validated SOT-23-5 terminal mapping, real-world load/line transient performance data, and direct alternative options for 1.2 V LDO replacement in space-constrained industrial and consumer designs.

Technical Context

The NCP4625HSN12T1G implements a CMOS-based pass transistor architecture with internal bandgap reference and error amplifier, enabling precise 1.2 V regulation across −40°C to +85°C ambient. Its active-high CE pin controls quiescent current reduction to 0.1 µA standby mode, while integrated thermal shutdown triggers at 165°C junction temperature and releases at 110°C.

Designed for low-noise, low-PSRR-sensitive applications, it achieves 70 dB PSRR at 1 kHz and 85 µV_RMS output noise (10 Hz–100 kHz). Dropout behavior is voltage-dependent: 0.60 V typical at 300 mA for 3.0 V output, but only 0.50 V for 5.0 V output - confirming its optimized headroom efficiency for higher-V_OUT variants, though NCP4625HSN12T1G's 1.2 V version exhibits 1.40 V max dropout at full load per spec table.

Key Specifications

Pinout & Package

SOT-23-5 package (Case 1212) with 0.95 mm pitch, 1.0–1.3 mm height, and exposed thermal pad not present - requires standard SOT-23 land pattern per ON Semiconductor layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fixed-output LDO regulator applications.

Compared with MCP1700T-1202E/TT and XC6206P122MR-G, the NCP4625HSN12T1G uniquely balances 300 mA drive capability, active-high CE control, and 0.02%/V line regulation - making it the only option among the three suitable for dynamically powered, noise-sensitive 1.2 V loads requiring both high accuracy and sequenced enable.

Availability

NCP4625HSN12T1G is available at Aetrix Electronics and suitable for battery-powered imaging modules, portable network equipment, and industrial data loggers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for NCP4625HSN12T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and intelligent edge applications.

The NCP4625HSN12T1G belongs to onsemi's NCP4625 family of CMOS LDO regulators, engineered specifically for space-constrained, battery-operated consumer and industrial devices demanding low IQ, high accuracy, and robust protection features.

FAQ

What is the maximum input voltage rating for the NCP4625HSN12T1G?

The NCP4625HSN12T1G has an absolute maximum input voltage rating of 12.0 V per its Absolute Maximum Ratings table. However, the recommended operating input voltage range is 2.6 V to 10 V. Exceeding 10 V may compromise long-term reliability or trigger overvoltage stress not covered by warranty, even if thermal limits are not breached. The NCP4625HSN12T1G is designed for optimal performance within the 2.6–10 V window.

Does the NCP4625HSN12T1G include an output discharge function?

No, the NCP4625HSN12T1G does not include an output discharge function. That feature is exclusive to the "D" suffix variants (e.g., NCP4625DSN12T1G), which integrate an internal VOUT-to-GND transistor activated during disable. The "H" suffix in NCP4625HSN12T1G denotes the standard version without auto-discharge - users requiring rapid VOUT decay must add an external bleed resistor or select the D-series part.

What is the thermal resistance (R_JA) of the NCP4625HSN12T1G in its SOT-23-5 package?

The NCP4625HSN12T1G in SOT-23-5 (Case 1212) has a specified thermal resistance of R_JA = 238°C/W under standard JEDEC test conditions. This value assumes a 1-inch² copper pad on a single-layer board; actual board-level R_JA will improve with enhanced copper area, internal planes, or thermal vias. At 300 mA and 2.6 V input, power dissipation is ~420 mW, resulting in ~100°C junction rise above ambient - well within the −40°C to +150°C operating range.

Can the NCP4625HSN12T1G operate stably with a 0.47 µF ceramic output capacitor?

Yes, the NCP4625HSN12T1G is characterized for stable operation with 0.47 µF ceramic output capacitors per its Electrical Characteristics table (test condition: C_OUT = 0.47 µF). However, the datasheet recommends ≥1 µF for optimal load transient response and margin against PCB parasitics. Using 0.47 µF is acceptable for static loads but may degrade recovery time during step-load changes - verify stability with actual board layout and load profile before finalizing.

What is the CE pin threshold voltage for enabling the NCP4625HSN12T1G?

The CE pin of the NCP4625HSN12T1G requires a minimum high-level voltage of 1.7 V to guarantee activation (V_CEH = 1.7 V min), and recognizes logic low below 0.8 V (V_CEL = 0.8 V max). The internal pull-down current is 0.3 µA, allowing direct connection to microcontroller GPIOs or open-drain drivers without external resistors. This ensures reliable enable/disable control across voltage rails from 1.8 V to 5 V logic families.