onsemi NCP4671DMX13TCG

Overview

NCP4671DMX13TCG from onsemi is a 400 mA dual-rail ultra-low dropout linear regulator with fixed 1.3 V output, designed for low-voltage core power in portable electronics. It features a separate VBIAS input (2.4–5.25 V) and ultra-low dropout of 180 mV at 400 mA, enabling operation from VIN as low as 1.4 V while maintaining regulation. Its XDFN6 package (1.2 × 1.2 × 0.4 mm) supports space-constrained battery-powered applications such as mobile camera modules and low-power microcontrollers.

For engineers reviewing the NCP4671DMX13TCG datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-rail architecture, ±15 mV output accuracy at 25°C, 28 µA quiescent current, 80 dB PSRR at 1 kHz (VIN ripple), and auto-discharge capability in the D-version - all critical for stable, low-noise, low-power rail generation in compact embedded systems.

Technical Context

The NCP4671DMX13TCG implements a dual-rail LDO architecture where VBIAS powers the control circuitry independently from VIN, decoupling bias supply noise and enabling ultra-low dropout performance. This separation allows VIN to operate down to VOUT + 0.1 V (i.e., ≥1.4 V for 1.3 V output) while maintaining regulation across −40°C to +85°C.

It integrates CE (chip enable) with internal pull-down, supports fast load transient response (<200 µs settling per Figures 49–50), and includes current foldback protection (120 mA typical). The D-version adds an internal VOUT-to-GND discharge transistor activated during disable, reducing output voltage decay time without external components.

Key Specifications

Pinout & Package

XDFN6 package (1.2 mm × 1.2 mm × 0.4 mm, case 711AA), Pb-free, wettable flank capable. Exposed thermal pad (pin 5) must be soldered to PCB ground plane for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-dropout LDO applications.

Compared with XC6210B132MR-G and RT9080L-13PUF, the NCP4671DMX13TCG uniquely combines dual-rail architecture, 400 mA capability, auto-discharge, and XDFN6 footprint - making it optimal for space-constrained, noise-sensitive, and sequenced-power applications where VBIAS noise rejection is critical.

Availability

NCP4671DMX13TCG is available at Aetrix Electronics and suitable for mobile camera modules, low-power microcontroller cores, and portable audio codecs requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for NCP4671DMX13TCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and sensing solutions for automotive, industrial, and portable electronics.

The NCP4671 series belongs to onsemi's ultra-low-dropout LDO portfolio, engineered specifically for next-generation battery-powered devices demanding sub-1.5 V core regulation, minimal quiescent power, and robust noise immunity in ultra-compact packages.

FAQ

What is the minimum input voltage required for NCP4671DMX13TCG to regulate 1.3 V output?

The NCP4671DMX13TCG requires VIN ≥ VOUT + 0.1 V = 1.4 V when VOUT ≥ 0.8 V (per datasheet Section 3, Electrical Characteristics). This ultra-low dropout is enabled by its dual-rail architecture - VBIAS must be ≥ VOUT + 1.6 V (≥2.9 V) and supplies the control circuitry separately. At 400 mA load, typical dropout is 180 mV, confirming stable regulation down to 1.4 V input.

Does NCP4671DMX13TCG include an internal discharge transistor?

Yes, the "D" in NCP4671DMX13TCG denotes the auto-discharge version. When CE is pulled low, an internal NMOS transistor connects VOUT to GND, actively discharging the output capacitor. This eliminates the need for an external bleed resistor and ensures rapid VOUT collapse - critical for power sequencing in multi-rail systems and preventing back-powering of downstream circuitry.

What are the recommended input and output capacitors for NCP4671DMX13TCG?

The datasheet specifies a 1 µF ceramic capacitor for each input (VIN and VBIAS) placed as close as possible to their respective pins and GND. For output, a 2.2 µF or larger ceramic capacitor is required for stability and optimal transient response. Tantalum capacitors are discouraged due to ESR-related instability risks. All capacitors must use low-ESR X5R/X7R dielectrics and be mounted within 2 mm of the IC pins.

Can NCP4671DMX13TCG operate with VBIAS lower than 2.9 V?

No - for VOUT = 1.3 V (≥0.8 V), the datasheet mandates VBIAS ≥ VOUT + 1.6 V = 2.9 V (Section 3, Electrical Characteristics). Operating below this violates the absolute maximum rating and may cause regulation failure, increased dropout, or thermal instability. VBIAS must also remain ≤5.25 V and be well-decoupled with a 1 µF ceramic capacitor.

How does the dual-rail architecture of NCP4671DMX13TCG improve PSRR compared to single-rail LDOs?

The dual-rail architecture isolates the error amplifier and reference circuitry from VIN noise by powering them from VBIAS instead of VIN. This yields 80 dB PSRR against VIN ripple at 1 kHz and 50 dB against VBIAS ripple - significantly higher than typical single-rail LDOs. In practice, this allows NCP4671DMX13TCG to cleanly regulate 1.3 V behind noisy buck converters without additional filtering.