onsemi NCP4688DMU30TCG

Overview

NCP4688DMU30TCG from onsemi is a 150 mA, low-noise CMOS LDO linear voltage regulator delivering a fixed 3.0 V output with ±1% accuracy over −40°C to +85°C, 10 µV_RMS output noise (10 Hz–100 kHz), and 80 dB PSRR at 1 kHz - designed for powering noise-sensitive RF modules and portable communication equipment.

For engineers reviewing the NCP4688DMU30TCG datasheet, pinout, applications, or equivalent options, key selection criteria include dropout voltage (290 mV typical at 150 mA), auto-discharge NMOS (60 Ω), CE pin threshold (1.0 V min "H"), thermal resistance (250 °C/W in DFN 1.0×1.0 mm), and Pb-free DFN package compatibility with high-density PCB layouts.

Technical Context

The NCP4688DMU30TCG integrates a precision bandgap reference, error amplifier, pass transistor, current-limit circuit, and chip-enable logic with internal pull-down. Its low-noise architecture suppresses internally generated ripple and rejects input supply noise via high PSRR across 1 kHz–100 kHz.

It features an integrated autodischarge NMOS between VOUT and GND activated during disable mode, enabling rapid output capacitor discharge - critical for sequencing in multi-rail systems. The device operates across 2.0 V to 5.25 V input while maintaining regulation down to 290 mV dropout at full 150 mA load.

Key Specifications

Pinout & Package

Package: UDFN-4 (1.0 mm × 1.0 mm, 0.65 mm pitch), Pb-free, exposed pad (EP) - optimized for thermal performance and high-density routing in portable electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700T-3002E/MB and XC6206P302MR-G, the NCP4688DMU30TCG uniquely combines 150 mA capability, active CE control, integrated autodischarge, and ultra-low noise in a 1.0×1.0 mm DFN - making it optimal for space-constrained, noise-sensitive, and sequenced power architectures.

Availability

NCP4688DMU30TCG is available at Aetrix Electronics and suitable for RF modules, portable audio subsystems, and industrial sensor nodes requiring stable component supply, Pb-free compliance, and high-volume tape-and-reel delivery (10,000 pcs/reel).

Supply support for NCP4688DMU30TCG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensing, and connectivity solutions.

The NCP4688DMU30TCG belongs to onsemi's precision low-noise LDO family, engineered specifically for noise-critical applications in portable communications, RF infrastructure, and industrial IoT where small size, accuracy, and fast transient response are essential.

FAQ

What is the maximum input voltage rating for the NCP4688DMU30TCG?

The NCP4688DMU30TCG has an absolute maximum input voltage of 6 V, with recommended operating input range from 2.0 V to 5.25 V. Exceeding 6 V may cause permanent damage. Operation above 5.25 V is outside specification and risks degraded PSRR, increased dropout, and reliability loss - always maintain VIN ≤ 5.25 V in normal use of the NCP4688DMU30TCG.

Does the NCP4688DMU30TCG require external capacitors, and what values are recommended?

Yes, the NCP4688DMU30TCG requires both input (C1) and output (C2) ceramic decoupling capacitors. The datasheet specifies 1.0 µF for each, placed as close as possible to their respective pins. Lower-ESR ceramics improve line/load transient response; tantalum capacitors are discouraged due to potential instability from high ESR. These values ensure stability and meet all electrical specifications for the NCP4688DMU30TCG.

How does the CE pin function on the NCP4688DMU30TCG, and what are its voltage thresholds?

The CE pin on the NCP4688DMU30TCG is active-high with V_CEH ≥ 1.0 V (min) for enable and V_CEL ≤ 0.4 V (max) for disable. An internal 0.6 µA pull-down current ensures safe default-off behavior if left floating. When enabled, the device delivers regulated 3.0 V; when disabled, the autodischarge NMOS rapidly pulls VOUT to GND. This precise control is integral to the NCP4688DMU30TCG's sequencing capability.

Is the NCP4688DMU30TCG RoHS-compliant and halogen-free?

Yes, the NCP4688DMU30TCG is Pb-free and RoHS-compliant per EU Directive 2011/65/EU, and meets JEDEC JS709A halogen-free requirements. The "G" suffix in the part number explicitly denotes Pb-free packaging. All materials, plating, and assembly processes for the NCP4688DMU30TCG conform to onsemi's environmental compliance standards and are documented in their material declarations.

What thermal derating applies to the NCP4688DMU30TCG in its DFN 1.0×1.0 mm package?

The NCP4688DMU30TCG has a junction-to-air thermal resistance (R_JA) of 250 °C/W in the DFN 1.0×1.0 mm package. At 150 mA and 3.0 V output with 5.0 V input (2.0 V drop), power dissipation is 300 mW - resulting in ~75 °C junction rise above ambient. To stay within the −40°C to +150°C T_J limit, ambient must remain ≤75°C with standard PCB layout; adding thermal vias under the EP significantly improves margin for the NCP4688DMU30TCG.