onsemi NCP580SQ25T1G

Overview

NCP580SQ25T1G from onsemi is a 2.5 V, 120 mA ultra-low-noise CMOS low-dropout (LDO) regulator with enable function, designed for precision power management in portable battery-powered systems. It delivers 1.5% output voltage accuracy, 150 mV dropout at 100 mA, 30 µV_RMS output noise (no NR capacitor), and operates from 2.2 V to 6.0 V input. It is used in hand-held instrumentation requiring stable, low-ripple bias for analog signal chains.

For engineers reviewing the NCP580SQ25T1G datasheet, pinout, applications, or equivalent options, key selection criteria include dropout performance at full load, quiescent current under light load (90 µA typ), shutdown leakage (<1 µA), PSRR (70 dB @ 1 kHz), and SC-82AB package compatibility with space-constrained PCB layouts.

Technical Context

The NCP580SQ25T1G implements a CMOS-based LDO architecture with internal bandgap reference, error amplifier, and PMOS pass transistor-enabling ultra-low dropout and fast transient response. Its enable pin (CE) controls operation with TTL-compatible thresholds (V_TH,ENH = 1.5 V min, V_TH,ENL = 0.3 V max), and it includes fold-back current limiting and thermal shutdown protection.

It is optimized for ceramic output capacitors ≥2.2 µF and requires only a 1.0 µF ceramic input capacitor. The device maintains 0.02%/V line regulation and 12 mV load regulation across its operating range, with temperature coefficient of 100 ppm/°C-making it suitable for applications where supply stability over voltage and temperature variation is critical.

Key Specifications

Pinout & Package

Package: SC-82AB (Case 419C-02), 4-pin surface-mount, 1.90 mm × 1.30 mm × 0.95 mm body, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700T-2502E/TT and TNIV525002500, the NCP580SQ25T1G offers superior noise performance and PSRR for analog-intensive designs, while maintaining competitive quiescent current and SC-82AB footprint-making it optimal for space-constrained, mixed-signal portable systems where signal integrity is critical.

Availability

NCP580SQ25T1G is available at Aetrix Electronics and suitable for portable medical sensors, wearable biometric monitors, industrial hand-held testers, and smart camera modules requiring stable component supply, consistent parametric performance, and long-term manufacturability.

Supply support for NCP580SQ25T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and intelligent edge applications.

The NCP580 series belongs to onsemi's precision analog power management portfolio, engineered specifically for battery-powered portable electronics demanding ultra-low noise, low dropout, and minimal quiescent current without sacrificing accuracy or reliability.

FAQ

What is the maximum input voltage rating for the NCP580SQ25T1G?

The NCP580SQ25T1G supports an absolute maximum input voltage of 6.5 V. However, the recommended operating input voltage range is 2.2 V to 6.0 V per electrical characteristics testing conditions. Exceeding 6.5 V risks permanent damage; operation above 6.0 V may degrade output accuracy and PSRR performance. Always verify input rail margins against worst-case battery or adapter conditions before final design sign-off for NCP580SQ25T1G.

Does the NCP580SQ25T1G require an external noise-reduction capacitor?

No, the NCP580SQ25T1G achieves 30 µV_RMS output noise (10 Hz–100 kHz) without any external noise-reduction capacitor. Its internal design eliminates the need for a dedicated NR pin or external bypass network-reducing component count and PCB area. This distinguishes it from many competing LDOs that mandate external capacitors to reach sub-50 µV_RMS noise levels. The NCP580SQ25T1G delivers this performance natively, simplifying layout for noise-critical analog sections.

What is the shutdown current specification for the NCP580SQ25T1G?

The NCP580SQ25T1G specifies a typical shutdown current of 0.1 µA and a maximum of 1.0 µA when the CE pin is driven low (≤0.3 V). This ultra-low leakage enables deep-sleep modes in battery-powered systems-e.g., retaining RTC or sensor wake logic for months on a single coin cell. The shutdown state is fully specified across -40°C to +85°C ambient, ensuring predictable battery life modeling. This value is measured with Vin applied and CE held at GND potential, per the datasheet test condition for ISD.

Can the NCP580SQ25T1G be used with ceramic output capacitors smaller than 2.2 µF?

The NCP580SQ25T1G is characterized and stabilized for use with ≥2.2 µF ceramic output capacitors. Using smaller values-such as 1.0 µF-may cause marginal phase margin, leading to ringing or instability under dynamic load steps, as shown in Figure 17 of the datasheet. While some designs may appear functional with 1.0 µF, onsemi does not guarantee stability or transient performance below the recommended 2.2 µF minimum. For robust operation, always adhere to the 2.2 µF ceramic requirement for NCP580SQ25T1G.

What is the thermal shutdown threshold for the NCP580SQ25T1G?

The NCP580SQ25T1G incorporates thermal shutdown protection that activates at a junction temperature of approximately 125°C (maximum rated T_J). When triggered, the device disables the pass element and holds output in high-impedance state until junction temperature falls below the hysteresis threshold (~110°C). This protects against sustained overload or poor PCB thermal design. The shutdown behavior is fully integrated and requires no external components-ensuring fail-safe operation for NCP580SQ25T1G in unattended or sealed environments.