onsemi NCP700BMT18TBG

Overview

NCP700BMT18TBG from onsemi is a 200 mA ultra-low-noise, high-PSRR BiCMOS LDO regulator optimized for RF power amplifier supply in battery-powered portable devices. It delivers 1.8 V output with ±2.5% accuracy over −40 °C to +125 °C, 110 mV dropout at 200 mA, 10 µV_RMS output noise (with 100 nF BYP capacitor), and 82 dB PSRR at 1 kHz - enabling clean biasing of sensitive RF front-end stages in smartphones and GPS modules.

For engineers reviewing the NCP700BMT18TBG datasheet, pinout, applications, or equivalent options, key selection criteria include its WDFN6 1.5 mm × 1.5 mm footprint, active discharge capability, enable-controlled shutdown (≤1 µA disable current), and stability with 1 µF ceramic output capacitors - critical for space-constrained, noise-sensitive RF power domains.

Technical Context

The NCP700BMT18TBG employs a BiCMOS process to merge bipolar low-noise performance with CMOS low quiescent current (70 µA typical at no load). Its architecture integrates an internal bandgap reference accessible via the BYP pin, allowing external 10–100 nF capacitors to suppress reference noise before amplification by the error amplifier and PMOS pass device.

It features logic-level EN control (0.4 V low / 1.2 V high threshold) with a 5 MΩ internal pull-down, active discharge (1 kΩ path to GND when disabled), thermal shutdown (150 °C trip, 135 °C reset), and current limiting (310 mA typical). The regulator remains stable with ≥1 µF ceramic C_OUT and requires no minimum load current.

Key Specifications

Pinout & Package

Package: WDFN6 (Case 511BJ), 1.5 mm × 1.5 mm, 0.5 mm height, wettable flank - suitable for automated optical inspection and high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6210B182MR-G and RT9013-18GB, the NCP700BMT18TBG provides superior RF-grade noise performance (10 µV_RMS), lower dropout (110 mV), and active discharge - making it the only option qualified for 5G PA bias where sub-15 µV_RMS noise and fast sequencing are mandatory.

Availability

NCP700BMT18TBG is available at Aetrix Electronics and suitable for smartphone RF front-ends, portable GPS receivers, and wearable sensor hubs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for NCP700BMT18TBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NCP700B series is designed specifically for ultra-low-noise, high-PSRR power delivery in RF and precision analog systems - targeting cellular handsets, GNSS receivers, and wireless infrastructure where supply integrity directly impacts signal fidelity.

FAQ

What is the maximum input voltage rating for the NCP700BMT18TBG?

The NCP700BMT18TBG has an absolute maximum input voltage rating of 6 V. Operation above this level risks permanent damage. For reliable continuous operation, the recommended input voltage range is 2.5 V to 5.5 V - ensuring proper regulation across the full 1.8 V output load range while maintaining specified dropout and thermal performance. This range aligns with single-cell Li-ion and Li-polymer battery discharge profiles.

Does the NCP700BMT18TBG require an external capacitor on the BYP pin?

Yes, the NCP700BMT18TBG requires an external capacitor between the BYP pin and GND to achieve its specified ultra-low noise performance. A 100 nF ceramic capacitor reduces output noise to 10 µV_RMS; 10 nF is the minimum value to avoid turn-on overshoot. Values below 10 nF are not recommended. The BYP capacitor directly shunts noise from the internal bandgap reference node, and omitting it results in 15 µV_RMS noise - degrading RF PA linearity.

How does the active discharge function work in the NCP700BMT18TBG?

When the EN pin is driven low, the NCP700BMT18TBG activates an internal 1 kΩ discharge path from the OUT pin to GND. This rapidly discharges the output capacitor (C_OUT), ensuring V_OUT falls within microseconds - critical for power sequencing in multi-rail systems. The discharge current is limited to prevent excessive stress on C_OUT, and the feature operates independently of load conditions. No external components are needed to enable this function.

Can the NCP700BMT18TBG be used without connecting the EN pin?

Yes, the NCP700BMT18TBG can operate without external EN control: tie the EN pin directly to the IN pin to enable continuous regulation. An internal 5 MΩ pull-down resistor ensures the device powers up in the OFF state if EN is left floating. This configuration eliminates the need for external pull-up resistors and simplifies designs where enable functionality is unnecessary - such as always-on sensor bias rails or fixed-function modules.

What is the thermal shutdown behavior of the NCP700BMT18TBG?

The NCP700BMT18TBG enters thermal shutdown when junction temperature exceeds 150 °C (typical), turning off the output to prevent damage. It remains latched off until the die cools to ≤135 °C (typical), at which point regulation resumes automatically. This hysteresis prevents oscillation near the trip point. The shutdown is not intended as a substitute for proper thermal design - the WDFN6 package requires adequate copper area (≥645 mm²) and thermal vias to sustain 200 mA continuous load without exceeding safe operating temperature.