onsemi NCP700BSN18T1G

Overview

NCP700BSN18T1G from onsemi is a 200 mA ultra-low-noise, high-PSRR LDO regulator optimized for RF power amplifier supply in battery-powered portable devices. It delivers 1.8 V output with ±2.5% accuracy, 110 mV typical dropout at 200 mA, 10 µV_RMS output noise (with 100 nF BYP capacitor), and 82 dB PSRR at 1 kHz - enabling clean biasing of sensitive RF front-end stages in smartphones and GPS modules.

For engineers reviewing the NCP700BSN18T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its WDFN6 1.5 mm × 1.5 mm footprint, active discharge circuit, enable-controlled shutdown (≤1 µA disable current), and stability with 1 µF ceramic output capacitors - critical for space-constrained, low-noise, battery-life-sensitive designs.

Technical Context

The NCP700BSN18T1G employs a BiCMOS process to merge bipolar low-noise performance with CMOS low ground current - achieving 70 µA no-load quiescent current and 75 µA at full 200 mA load. Its architecture integrates a PMOS pass transistor with an accessible bandgap reference node via the BYP pin, allowing external 10–100 nF capacitors to suppress noise before amplification by the error amplifier.

It features internal current limiting (310 mA typ), thermal shutdown (150 °C trip), active discharge (1 kΩ path), and logic-level enable with 0.4 V/1.2 V thresholds and 5 MΩ internal pull-down. The device operates across −40 °C to +125 °C junction temperature and supports input voltages from 2.5 V to 5.5 V.

Key Specifications

Pinout & Package

Package: WDFN6 (1.5 mm × 1.5 mm, 0.75 mm height, case 511BJ), Pb-free, moisture sensitivity level 1 (MSL1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6210B182MR-G and RT9013-18GB, the NCP700BSN18T1G uniquely combines 200 mA capability, 10 µV_RMS noise (with BYP), active discharge, and WDFN6 footprint - making it the only option qualified for RF PA bias in miniaturized 5G client devices requiring simultaneous low noise, fast turn-off, and thermal robustness.

Availability

NCP700BSN18T1G is available at Aetrix Electronics and suitable for smartphone RF front-end design, GPS module development, and wearable sensor node production requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for NCP700BSN18T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Nasdaq: ON) is a global semiconductor leader delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and edge applications.

The NCP700B series was designed specifically for noise-sensitive RF and precision analog power delivery in portable electronics - emphasizing ultra-low noise, high PSRR, minimal footprint, and robust protection for battery-operated systems.

FAQ

What is the maximum input voltage rating for the NCP700BSN18T1G?

The NCP700BSN18T1G has an absolute maximum input voltage rating of 6 V. Operation above this level risks permanent damage. For reliable continuous operation, the recommended input voltage range is 2.5 V to 5.5 V - ensuring proper regulation at 1.8 V output while maintaining margin against dropout and thermal stress across temperature extremes.

Does the NCP700BSN18T1G require an external capacitor on the BYP pin, and what value is recommended?

Yes, the NCP700BSN18T1G requires an external capacitor between the BYP pin and GND to achieve specified ultra-low noise performance. The datasheet specifies a minimum of 10 nF to prevent turn-on overshoot; 100 nF is recommended to achieve the 10 µV_RMS noise figure. Values larger than 100 nF further reduce noise but increase turn-on time proportionally - design trade-offs must be validated per application load profile.

How does the active discharge feature of the NCP700BSN18T1G function during shutdown?

When the EN pin is driven low, the NCP700BSN18T1G activates an internal 1 kΩ discharge path between the OUT and GND pins. This rapidly discharges the output capacitor - reducing V_OUT decay time to under 1 ms with a 10 µF C_OUT. This prevents back-powering of upstream logic or latch-up in multi-supply systems, a critical requirement in modern portable architectures with tightly coupled voltage domains.

Can the NCP700BSN18T1G operate without connecting the EN pin?

Yes, the NCP700BSN18T1G can operate without external EN control: its internal 5 MΩ pull-down resistor ensures the device powers on by default when EN is left floating or unconnected. However, tying EN directly to IN is preferred for guaranteed startup - especially in noisy environments where floating pins risk unintended disable due to coupling. No external pull-up is required.

What is the thermal shutdown behavior of the NCP700BSN18T1G, and how does it recover?

The NCP700BSN18T1G triggers thermal shutdown at 150 °C (typical junction temperature) and remains latched off until the die cools to ≤135 °C (typical reset threshold). During shutdown, the output is disabled and quiescent current drops to <1 µA. Recovery is automatic and does not require cycling EN - but sustained overheating indicates inadequate PCB copper area or excessive ambient temperature, requiring thermal redesign per the datasheet's 111 °C/W J_B specification.