onsemi NCP752ASN30T1G

Overview

NCP752ASN30T1G from onsemi is a 200 mA ultra-low-noise, ultra-low-quiescent-current LDO voltage regulator with fixed 3.0 V output, designed for RF-sensitive power domains in portable and battery-powered systems. It delivers ±2% output accuracy over load/line/temperature, 130 mV typical dropout at 200 mA, 11.5 µV_RMS noise (100 Hz–100 kHz), and 68 dB PSRR at 1 kHz - enabling clean biasing of power amplifiers in satellite radios and precision instrumentation.

For engineers reviewing the NCP752ASN30T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its Auto Low-Power Mode (12 µA I_Q), active output discharge, open-drain Power Good flag with 92–96% V_OUT threshold hysteresis, and stability with only a 1 µF ceramic output capacitor - critical for space-constrained, low-power RF subsystems.

Technical Context

The NCP752ASN30T1G integrates a PMOS pass transistor with adaptive ground current control to achieve ultra-low quiescent current across input voltages (2.0–5.5 V) and load conditions. Its internal bandgap reference, soft-start circuitry, and thermal shutdown (160°C trip, 20°C hysteresis) ensure robust startup and fault recovery in portable electronics.

It features an enable-controlled active discharge path (1 kΩ pull-down) and a dedicated open-drain PG output that asserts low when V_OUT falls below 92% of nominal - supporting system-level power sequencing and brown-out detection without external components.

Key Specifications

Pinout & Package

Package: XDFN-6 (1.5 mm × 1.5 mm, 0.5 mm pitch, Case 711AE), thermally enhanced with exposed thermal pad. Optimized for high-density portable PCB layouts and efficient heat dissipation via soldered copper plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700T-3002E/MB and TPL7407LDR, the NCP752ASN30T1G uniquely combines ultra-low noise, active discharge, and a dedicated PG flag in a 1.5×1.5 mm footprint - making it the only option among the three qualified for RF PA biasing and safety-critical medical sensor power.

Availability

NCP752ASN30T1G is available at Aetrix Electronics and suitable for RF front-end modules, portable medical devices, and Bluetooth audio subsystems requiring stable component supply with guaranteed long-term manufacturability and Pb-free compliance.

Supply support for NCP752ASN30T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications - with leadership in power management, analog, and sensing technologies.

The NCP752ASN30T1G belongs to onsemi's high-performance LDO family engineered specifically for noise-sensitive, battery-constrained RF and portable electronics - emphasizing ultra-low I_Q, minimal external components, and integrated protection.

FAQ

What is the minimum input voltage required for NCP752ASN30T1G to regulate 3.0 V output?

The NCP752ASN30T1G requires a minimum input voltage of 3.13 V to maintain regulation at full 200 mA load, based on its 130 mV typical dropout voltage. At lighter loads, it can operate down to 2.0 V input, but output will drop below 3.0 V once VIN falls within the dropout range - verified per datasheet Figure 60 and Electrical Characteristics table.

Does NCP752ASN30T1G require an external bypass capacitor for noise reduction?

No, the NCP752ASN30T1G achieves 11.5 µV_RMS output noise (100 Hz–100 kHz) without any external noise-bypass capacitor - a key differentiator confirmed in the datasheet Features section and Figure 49 characterization. This eliminates BOM cost and layout area typically needed for RC filtering in RF applications.

How does the Power Good (PG) output of NCP752ASN30T1G behave during startup and fault conditions?

The PG output of NCP752ASN30T1G is an open-drain signal that remains low until V_OUT reaches ≥92% of 3.0 V, then pulls high after a programmable timeout delay (2 µs for NCP752A variant). It reasserts low within 5 µs if V_OUT drops below 90% - enabling precise power sequencing and fault detection in real-time systems using NCP752ASN30T1G.

Can NCP752ASN30T1G be used with tantalum output capacitors?

No - the NCP752ASN30T1G datasheet explicitly advises against tantalum capacitors due to their high and temperature-dependent ESR, which risks instability. It is characterized and guaranteed stable only with ceramic capacitors ≥1.0 µF and ESR < 700 mΩ, as confirmed in Application Information section and Figure 78 stability plot.

What thermal performance can be expected from NCP752ASN30T1G in a standard PCB layout?

In a standard layout with 1 oz FR-4 PCB and 645 mm² copper area, the NCP752ASN30T1G (XDFN-6 package) has a junction-to-air thermal resistance (R_JA) of 149°C/W. At 200 mA load with 3.3 V input, power dissipation is ~60 mW, resulting in ~9°C junction rise above ambient - well within safe operating limits per datasheet Thermal Characteristics table.