onsemi NCP752BSN28T1G

Overview

NCP752BSN28T1G from onsemi is a 200 mA ultra-low-noise, ultra-low-quiescent-current LDO regulator with fixed 2.8 V output, designed for RF-sensitive power domains in satellite radios, infotainment systems, and precision instrumentation. It delivers ±2% output accuracy over load/line/temperature, 11.5 µV_RMS noise (100 Hz–100 kHz), and 68 dB PSRR at 1 kHz - all without requiring an external noise-bypass capacitor.

For engineers reviewing the NCP752BSN28T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 12 µA quiescent current in active mode, 130 mV dropout at 200 mA, open-drain Power Good (PG) output with 92–96% V_OUT threshold hysteresis, and compatibility with 1 µF ceramic output capacitors.

Technical Context

The NCP752BSN28T1G employs a PMOS pass transistor architecture enabling reverse-current blocking and low dropout performance. Its Auto Low-Power Mode dynamically reduces ground current under light loads, maintaining ultra-low IQ while preserving regulation stability across −40°C to +125°C.

Internal circuitry includes undervoltage lockout (UVLO) with 1.2–1.9 V activation range, thermal shutdown at 160°C with 20°C hysteresis, and integrated soft-start limiting inrush current. The open-drain PG output asserts high when V_OUT reaches ≥92% of nominal and de-asserts below 90%, supporting system-level power sequencing and fault monitoring.

Key Specifications

Pinout & Package

The NCP752BSN28T1G is packaged in a 6-pin XDFN 1.5 × 1.5 mm (Case 711AE), thermally enhanced for high-power-density layouts. Pin 5 is Not Connected (N/C) and may be tied to GND to improve thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with XC6210B282MR-G and RT9080-28GB, the NCP752BSN28T1G uniquely combines ultra-low 12 µA quiescent current, integrated PG with hysteresis, and guaranteed stability with 1 µF ceramic output caps - making it optimal for noise-critical, battery-constrained RF and medical designs.

Availability

NCP752BSN28T1G is available at Aetrix Electronics and suitable for satellite radio front-ends, portable medical sensor modules, and Bluetooth audio SoC power rails requiring stable component supply, long-term lifecycle support, and AEC-Q200-aligned reliability.

Supply support for NCP752BSN28T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Nasdaq: ON) is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The NCP752 series targets ultra-low-noise, ultra-low-IQ power management for RF and battery-powered systems - emphasizing clean regulation, minimal standby consumption, and seamless integration into compact, thermally constrained PCB layouts.

FAQ

What is the maximum input voltage rating for the NCP752BSN28T1G?

The NCP752BSN28T1G has an absolute maximum input voltage rating of 6 V. Operation above 5.5 V is outside the specified functional range and may cause permanent damage. For reliable operation, VIN must remain between 2.0 V and 5.5 V, with dropout margin maintained (e.g., VIN ≥ 2.93 V for 2.8 V output at 200 mA). The device includes undervoltage lockout (UVLO) that disables regulation if VIN drops below 1.2 V.

Does the NCP752BSN28T1G require an external noise-bypass capacitor?

No, the NCP752BSN28T1G does not require an external noise-bypass capacitor. Its internal architecture achieves 11.5 µV_RMS output noise (100 Hz–100 kHz) without additional filtering components. This simplifies layout, reduces BOM count, and eliminates capacitor-related aging or temperature drift effects - a key advantage over legacy LDOs requiring 10 nF–100 nF bypass caps.

How does the Power Good (PG) output behave during startup and shutdown of the NCP752BSN28T1G?

The PG output of the NCP752BSN28T1G is an open-drain signal that goes high (pulled up externally) when V_OUT reaches ≥92% of 2.8 V during startup, and goes low when V_OUT falls below 90% during shutdown. It features built-in hysteresis (2% V_OUT) to prevent chatter near threshold. The NCP752BSN28T1G variant has a 200 µs typical reaction time and 2 s timeout delay, ensuring reliable sequencing in microcontroller-based systems.

Can the NCP752BSN28T1G be used with a 1 µF ceramic output capacitor?

Yes, the NCP752BSN28T1G is explicitly designed and characterized to remain stable with a 1.0 µF ceramic (X5R/X7R) output capacitor. The datasheet guarantees stability down to 500 nF effective capacitance, accommodating typical DC-bias derating. No minimum ESR is required, and maximum ESR must be <700 mΩ - easily met by standard 0402/0603 ceramic capacitors. Tantalum capacitors are not recommended due to high and temperature-variable ESR.

What protection features are integrated into the NCP752BSN28T1G?

The NCP752BSN28T1G integrates thermal shutdown (160°C trip, 140°C reset), output current limiting (~400 mA), short-circuit protection (410 mA typ.), and undervoltage lockout (1.2–1.9 V). All protections are fully internal - no external components needed. During thermal shutdown, the device disables output and PG goes low; recovery occurs automatically once junction temperature falls below 140°C. These features ensure robust operation in unattended or high-ambient environments without external supervision circuitry.