onsemi NCV8135AMT120TBG

Overview

NCV8135AMT120TBG from onsemi is a 500 mA very low dropout (VLDO) CMOS voltage regulator with NMOS pass transistor and separate VBIAS rail, delivering 1.2 V ±1% output accuracy over −40°C to +125°C, ultra-low 53 mV dropout at 500 mA, and 35 µA typical bias quiescent current - designed for automotive point-of-load regulation in noise-sensitive, space-constrained systems such as ADAS camera modules and infotainment power rails.

For engineers reviewing the NCV8135AMT120TBG datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-rail architecture (VIN/VBIAS), active output discharge capability (A-version), WDFN6 2 mm × 2 mm wettable flanks package, AEC-Q100 qualification, and compatibility with 10 µF ceramic output capacitors.

Technical Context

The NCV8135AMT120TBG implements a dual-supply NMOS-based VLDO architecture: VIN supplies the pass element while VBIAS powers internal control circuitry, enabling stable regulation even when VIN approaches VOUT. Its under-voltage lockout monitors VBIAS with 1.6 V threshold and 0.2 V hysteresis.

It features monotonic soft-start via EN pin control, thermal shutdown at 160°C (re-arming at 140°C), and integrated current limiting (600–1200 mA). The SNS pin enables remote output sensing for improved load regulation, and the A-version includes active output discharge (150 Ω pull-down) during shutdown.

Key Specifications

Pinout & Package

NCV8135AMT120TBG uses the WDFN6 2 mm × 2 mm package (Case 511BR) with wettable flanks for enhanced optical inspection and solder joint reliability in automotive reflow processes. The exposed thermal pad must be soldered to the PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar very low dropout voltage regulator applications.

Compared with NCV8135BMT120TBG, the NCV8135AMT120TBG adds active discharge for safer system resets; versus TLD1120FV50, it delivers superior low-headroom operation, higher PSRR, and remote sensing - making it optimal for noise-critical, space-constrained automotive loads.

Availability

NCV8135AMT120TBG is available at Aetrix Electronics and suitable for automotive ADAS camera modules, infotainment SoC core supplies, and telematics modem power rails requiring stable component supply, AEC-Q100 compliance, and long-term production continuity.

Supply support for NCV8135AMT120TBG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud, and IoT applications, with leadership in power management, imaging, and automotive electronics.

The NCV8135 series belongs to onsemi's automotive-grade power management portfolio, engineered specifically for demanding point-of-load regulation in safety-critical vehicle subsystems where precision, low noise, and thermal resilience are mandatory.

FAQ

What is the output voltage tolerance of the NCV8135AMT120TBG over temperature?

The NCV8135AMT120TBG delivers 1.2 V output with ±1.0% accuracy across the full operating junction temperature range of −40°C to +125°C, and tighter ±0.5% accuracy at +25°C. This specification is guaranteed under defined test conditions including VBIAS ≥ (VOUT + 1.6 V), VIN = VOUT + 0.3 V, and load current from 1 mA to 500 mA - ensuring reliable core voltage for automotive MCUs and sensors.

Does the NCV8135AMT120TBG require an external capacitor on the VBIAS pin?

Yes, the NCV8135AMT120TBG requires a minimum 1 µF ceramic capacitor between VBIAS and GND, as specified in the Applications Information section. This capacitor stabilizes the bias rail against transients and ensures consistent internal circuit operation - especially critical during EN assertion and load step events. onsemi recommends placing it directly adjacent to the VBIAS pin with minimal trace length.

How does the active output discharge function operate in the NCV8135AMT120TBG?

The NCV8135AMT120TBG includes an integrated 150 Ω pull-down transistor between VOUT and GND that activates when the EN pin is driven low. This discharges downstream capacitance rapidly, preventing floating voltages that could cause unintended wake-up or logic glitches in connected ICs. The feature is exclusive to "A" version devices and is disabled when EN is high or floating.

Can the NCV8135AMT120TBG be used with input voltage below 1.2 V?

Yes, the NCV8135AMT120TBG supports VIN as low as 0.4 V, enabling operation with severely depleted batteries or ultra-low-voltage intermediate rails. However, stable 1.2 V regulation requires VIN ≥ VOUT + VDO - so with 53 mV typical dropout, VIN must be ≥1.253 V to sustain 500 mA output. At lower VIN, output current capability decreases per the dropout vs. IOUT curves in the datasheet.

What is the purpose of the SNS pin on the NCV8135AMT120TBG?

The SNS (sense) pin on the NCV8135AMT120TBG enables remote output voltage feedback by connecting directly to the load-side of the output trace. This compensates for IR drop across PCB copper, improving load regulation to ≤0.5 mV across 1–500 mA. It is essential for applications where VOUT accuracy at the load exceeds what can be achieved with local feedback due to trace resistance or thermal gradients.