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onsemi NCV8570MN250R2G

Part No.:
NCV8570MN250R2G
Manufacturer:
onsemi
Category:
Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
Package:
6-VDFN Exposed Pad
Datasheet:
AetrixNCV8570MN250R2G.pdf
Description:
IC REG LINEAR 2.5V 200MA 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,000

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Product details

Overview

NCV8570MN250R2G from onsemi is a 200 mA ultra-low-noise, high-PSRR BiCMOS LDO regulator delivering a precise 2.5 V output with 15 µVrms noise (typ), 80 dB PSRR (typ at 1 kHz), and 105 mV dropout at 150 mA - engineered for RF power amplifier biasing in automotive satellite radios and infotainment systems.

For engineers reviewing the NCV8570MN250R2G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q100 qualification, DFN6 2×2.2 mm package with active discharge, low 1 µA sleep current, and Cnoise-pin-enabled noise reduction down to 15 µVrms.

Technical Context

The NCV8570MN250R2G integrates a bipolar-based error amplifier and CMOS pass device in a single BiCMOS process to simultaneously achieve ultra-low noise and low ground current (70–220 µA across load). Its internal bandgap reference feeds directly into the Cnoise pin, enabling external capacitor-based suppression of reference node noise before amplification.

It features logic-controlled enable (CE) with 0.4–1.2 V threshold, active discharge circuitry for fast turn-off (<4 ms with 100 nF Cnoise), thermal shutdown at 150 °C with 20 °C hysteresis, and current limiting set to 200 mA (min) with short-circuit protection at 320 mA (typ).

Key Specifications

ParameterValue and Actual Design Meaning
Output Voltage2.5 V ±2% (1.836–1.854 V over temperature and load), enabling stable bias for precision analog circuits.
Noise (10 Hz–100 kHz)15 µVrms (typ, with 100 nF Cnoise), critical for minimizing phase noise in RF power amplifiers.
PSRR (1 kHz)80 dB (typ), rejecting switching noise from upstream DC/DC converters in mixed-signal automotive systems.
Dropout Voltage105 mV (typ at 150 mA), allowing operation from 2.605 V input while maintaining 2.5 V output - essential for battery-powered portable RF modules.
Sleep Current≤1 µA (max), preserving battery life during system standby in GPS and HD radio receivers.
PackageDFN6 2×2.2 mm, 0.65 mm pitch, with exposed thermal pad - supports compact PCB layouts and thermal dissipation up to 37 °C/W (junction-to-lead).
QualificationAEC-Q100 Grade 1 (−40 °C to +125 °C junction), certified for automotive infotainment and telematics ECUs.

Pinout & Package

NCV8570MN250R2G is housed in a thermally enhanced DFN6 2×2.2 mm package (Case 506BA) with an exposed EPAD for improved heat transfer. Pin 1 is CE (chip enable), Pin 2 and Pin 5 are GND (fused internally), Pin 3 is Vin, Pin 4 is Vout, Pin 6 is Cnoise, and the EPAD is electrically connected to GND.

Pin/TerminalCircuit RoleDesign Meaning
1 (CE)Chip Enable inputLogic-level control: <0.4 V disables regulator (≤1 µA IDIS); >1.2 V enables; internal 5 MΩ pull-down ensures safe default-off state.
2, 5, EPAD (GND)Power ground returnFused GND pins and exposed thermal pad reduce impedance and improve thermal resistance (37 °C/W J-to-L).
3 (Vin)Input supply connectionAccepts 2.5–5.5 V input; designed for direct connection to automotive battery or DC/DC output with minimal input capacitance (0.1 µF).
4 (Vout)Regulated outputDelivers stable 2.5 V ±2% to RF PA stages; supports ceramic output capacitors as low as 1 µF with no ESR requirement.
6 (Cnoise)Noise reduction nodeProvides direct access to internal bandgap reference; 10–100 nF capacitor to GND reduces output noise from 20 µVrms to 15 µVrms.

Key Features

FeatureDesign Value
Ultra-low noise regulation15 µVrms output noise (10 Hz–100 kHz) with 100 nF Cnoise capacitor - preserves signal integrity in GPS LNA and satellite radio IF stages.
High-frequency PSRR80 dB rejection at 1 kHz and 65 dB at 10 kHz - suppresses ripple from adjacent buck converters without requiring additional filtering.
Active dischargeInternal transistor discharges Vout within milliseconds when CE is pulled low - prevents voltage hold-up that could delay system reset or cause latch-up in downstream logic.
Thermal robustness150 °C thermal shutdown with 20 °C hysteresis and 37 °C/W junction-to-lead thermal resistance - sustains operation under sustained 200 mA load in confined automotive enclosures.
AEC-Q100 complianceQualified per AEC-Q100 Rev H Grade 1, including HTOL, TC, and ESD testing - meets functional safety requirements for ASIL-B–capable infotainment subsystems.

Applications

Satellite Radio Power AmplifierAutomotive Infotainment Audio Supply

Use Scenario: Biasing Class-A/B RF power amplifier in satellite radio tuner module operating in vehicle cabin environment with wide ambient temperature swing (−40 °C to +85 °C).

IC Role / Device Role / Timing Role: Ultra-low-noise 2.5 V LDO providing clean VCC to PA stage, decoupling switching noise from main 5 V rail.

Use Value: 15 µVrms noise and 80 dB PSRR prevent AM/FM interference and maintain EVM <3% in QPSK-modulated satellite signals.

Use Scenario: Local analog supply for DAC and headphone amplifier in head-unit audio subsystem, co-located with high-speed digital processors.

IC Role / Device Role / Timing Role: Low-dropout regulator delivering stable 2.5 V to audio codec's analog core, isolated via Cnoise pin from digital supply noise.

Use Value: 105 mV dropout enables operation from degraded 2.6 V input during cold-crank; 2.5 V ±2% accuracy ensures THD+N <0.005% across temperature.

GPS Receiver LNA BiasAutomotive Instrument Cluster Display Driver

Use Scenario: Powering low-noise amplifier front-end in GNSS receiver module where phase noise directly impacts position accuracy.

IC Role / Device Role / Timing Role: Precision 2.5 V bias source for GaAs pHEMT LNA, with Cnoise pin actively suppressing reference-induced jitter.

Use Value: 15 µVrms noise contributes <0.1° RMS phase error at 1.575 GHz - enabling sub-3-meter CEP positioning accuracy.

Use Scenario: Supplying TFT-LCD column driver ICs in digital instrument cluster, where supply ripple causes visible flicker and color shift.

IC Role / Device Role / Timing Role: High-PSRR local regulator for display analog rails, rejecting noise from CAN transceivers and MCU switching activity.

Use Value: 80 dB PSRR at 1 kHz eliminates 120 Hz ripple artifacts; 1 µA sleep current extends battery backup runtime during ignition-off mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPS79925DRVR200 mA, 2.5 V fixed, 25 µVrms noise, 60 dB PSRR @ 1 kHz, SOT-23-5 package, no Cnoise pin.Lacks dedicated noise-reduction pin; higher noise limits use in ultra-sensitive RF stages.Choose when board space permits SOT-23 and noise requirements are less stringent (e.g., non-RF analog supplies).
NCP1117ST25T3G1 A, 2.5 V fixed, 420 µVrms noise, 65 dB PSRR @ 120 Hz, TO-220/SOT-223, no enable or active discharge.Higher noise and no CE control make it unsuitable for battery-powered or fast-turnoff systems.Select only for cost-sensitive, non-automotive, high-current linear regulation where noise is secondary.

Compared with TPS79925DRVR and NCP1117ST25T3G, the NCV8570MN250R2G uniquely combines automotive qualification, Cnoise-enabled ultra-low noise, and active discharge in a 2×2.2 mm DFN - making it the only option for AEC-Q100-compliant, noise-critical RF biasing where footprint and dynamic response are constrained.

Availability

NCV8570MN250R2G is available at Aetrix Electronics and suitable for automotive infotainment, satellite radio modules, and GPS receiver designs requiring stable component supply, AEC-Q100 traceability, and long-term production continuity.

Supply support for NCV8570MN250R2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in automotive, industrial, cloud, and sensing solutions.

The NCV8570MN250R2G belongs to onsemi's automotive-grade LDO portfolio, designed specifically to meet the ultra-low-noise, high-PSRR, and AEC-Q100 reliability demands of RF power management in next-generation vehicle connectivity systems.

FAQ

What is the maximum input voltage rating for the NCV8570MN250R2G?

The NCV8570MN250R2G has an absolute maximum input voltage (Vin) of 6 V. Operation above this level risks permanent damage. For reliable continuous operation, the recommended input range is 2.5 V to 5.5 V - ensuring proper regulation while maintaining 105 mV dropout margin at 150 mA load. This range aligns with typical automotive 5 V rail tolerances and battery-backed systems.

Does the NCV8570MN250R2G require an external capacitor on the Cnoise pin?

Yes - the Cnoise pin (Pin 6) must be connected to GND via a capacitor (10 nF to 100 nF) to achieve specified ultra-low noise performance. Without it, output noise rises from 15 µVrms to 20 µVrms. The capacitor provides direct shunting of reference node noise before amplification; 100 nF yields optimal 15 µVrms, while 10 nF gives faster transient response with slightly higher noise.

Is the NCV8570MN250R2G pin-compatible with other variants in the NCV8570 family?

Yes - all NCV8570 variants (e.g., NCV8570MN180R2G, NCV8570MN330R2G) share identical DFN6 2×2.2 mm pinout and footprint. Pin assignments (CE, GND, Vin, Vout, Cnoise) are consistent across output voltage options, enabling drop-in replacement during design iteration or voltage optimization without PCB revision.

What thermal derating applies to the NCV8570MN250R2G at 200 mA load?

At 200 mA output current and ambient temperature of 85 °C, the NCV8570MN250R2G's junction temperature rise is ~74 °C (200 mA × 0.15 V dropout × 37 °C/W = 1110 mW × 37 °C/W ≈ 41 °C rise; plus ambient gives ~126 °C). This remains safely below the 150 °C thermal shutdown threshold. Derating is not required up to 125 °C ambient if copper area ≥200 mm² per Figure 24.

How does the active discharge feature function in the NCV8570MN250R2G?

When the CE pin is driven low, the NCV8570MN250R2G activates an internal NMOS transistor between Vout and GND, discharging the output capacitor rapidly. This occurs without drawing current from Vin - power comes from Vout itself - enabling fast, controlled turn-off (<4 ms with 100 nF Cnoise) while maintaining ≤1 µA sleep current. It prevents residual voltage from interfering with downstream logic sequencing.

NCV8570MN250R2G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
6-VDFN Exposed Pad
Packaging:
Bulk
Product Status:
Obsolete
Output Configuration:
Positive
Output Type:
Fixed
Number of Regulators:
1
Voltage - Input (Max):
5.5V
Voltage - Output (Min/Fixed):
2.5V
Voltage - Output (Max):
-
Voltage Dropout (Max):
0.215V @ 200mA
Current - Output:
200mA
Current - Quiescent (Iq):
90 µA
Current - Supply (Max):
220 µA
PSRR:
80dB ~ 65dB (120Hz ~ 10kHz)
Control Features:
Enable
Protection Features:
Over Current, Over Temperature
Operating Temperature:
-40°C ~ 85°C
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-DFN (2x2.2)

NCV8570MN250R2G FAQ

1.How can I place an order for NCV8570MN250R2G through Aetrix?

Please submit a Request for Quotation (RFQ) for NCV8570MN250R2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NCV8570MN250R2G reliable?

The price and inventory of NCV8570MN250R2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NCV8570MN250R2G is usually 5 days.

3.What payment methods are accepted for NCV8570MN250R2G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NCV8570MN250R2G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NCV8570MN250R2G?

NCV8570MN250R2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NCV8570MN250R2G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NCV8570MN250R2G?

For technical support, including NCV8570MN250R2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NCV8570MN250R2G requirements.

6.How does Aetrix verify that NCV8570MN250R2G is sourced from the original manufacturer or authorized distributors?

All NCV8570MN250R2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NCV8570MN250R2G meets industry standards.

7.What is the process for return or replacement of NCV8570MN250R2G?

All NCV8570MN250R2G units undergo pre-shipment inspection (PSI). If there is an issue with NCV8570MN250R2G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NCV8570MN250R2G part is unused and in its original packaging.

Return procedure for NCV8570MN250R2G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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