onsemi NCV8570MN300R2G

Overview

NCV8570MN300R2G from onsemi is a 200 mA ultra-low-noise, high-PSRR BiCMOS LDO regulator delivering 3.0 V ±3% output with 100 mV typical dropout at 150 mA, 15 µV_RMS output noise (10 Hz–100 kHz), and 80 dB PSRR at 1 kHz - engineered for RF power amplifier biasing in automotive satellite radios and infotainment systems.

For engineers reviewing the NCV8570MN300R2G datasheet, pinout, applications, or equivalent options, key selection criteria include its AEC-Q100 qualification, DFN6 2×2.2 mm package with exposed thermal pad, active discharge circuit, and Cnoise pin enabling configurable noise reduction via external capacitor.

Technical Context

The NCV8570MN300R2G integrates a bandgap reference, error amplifier, and PMOS pass device in a BiCMOS process to simultaneously achieve low ground current (70 µA at 1 mA load) and ultra-low noise. Its Cnoise pin provides direct access to the internal reference node, allowing external capacitor filtering to reduce output noise from 20 µV_RMS (10 nF) to 15 µV_RMS (100 nF).

It features logic-controlled enable (CE) with 0.4 V/1.2 V thresholds, thermal shutdown at 150 °C with 20 °C hysteresis, and current limiting set to ≥200 mA (typ. 310 mA). Stability is guaranteed with ceramic output capacitors as low as 1 µF and no ESR minimum requirement.

Key Specifications

Pinout & Package

NCV8570MN300R2G uses the DFN6 2×2.2 mm package (Case 506BA) with an exposed thermal pad (EPAD) fused to pins 2, 5, and EPAD for GND. This 6-pin leadless package supports high thermal performance (R_θJA = 120 °C/W) in space-constrained automotive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLV70730PDQNR and NCP1117ST30T3G, the NCV8570MN300R2G uniquely combines AEC-Q100 qualification, sub-20 µV_RMS noise, and programmable noise reduction - making it the only option among the three qualified for next-generation automotive RF power management.

Availability

NCV8570MN300R2G is available at Aetrix Electronics and suitable for automotive infotainment, GPS navigation, and satellite radio applications requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for NCV8570MN300R2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, and sensing solutions for automotive, industrial, and cloud infrastructure markets.

The NCV8570 series belongs to onsemi's automotive-grade analog power portfolio, designed specifically to meet stringent noise, reliability, and thermal requirements of modern vehicle RF subsystems including telematics, ADAS sensors, and infotainment head units.

FAQ

What is the maximum input voltage rating for the NCV8570MN300R2G?

The NCV8570MN300R2G has an absolute maximum input voltage rating of 6 V. Operation above this level risks permanent damage. For reliable regulation, Vin must be at least 0.5 V above the 3.0 V nominal output - meaning the practical minimum input is 3.5 V, and the recommended operating range is 3.5 V to 5.5 V per the Electrical Characteristics table.

Does the NCV8570MN300R2G require an external capacitor on the Cnoise pin?

Yes - the Cnoise pin must be connected to GND via a capacitor (10 nF to 100 nF) to achieve specified noise performance. Without it, output noise rises to 20 µV_RMS. The datasheet confirms that using 100 nF reduces noise to 15 µV_RMS, while 10 nF yields 20 µV_RMS. Omitting the capacitor disables the primary noise-reduction mechanism of the NCV8570MN300R2G.

Is the NCV8570MN300R2G pin-compatible with other variants in the NCV8570 family?

Yes - all DFN6-packaged NCV8570 variants (e.g., NCV8570MN180R2G, NCV8570MN250R2G) share identical pinout, footprint, and thermal pad layout. The only difference is the factory-trimmed output voltage. This allows drop-in replacement across voltage options without PCB redesign, provided the input voltage margin and load requirements remain compatible.

What is the thermal resistance (R_θJA) of the NCV8570MN300R2G in its DFN6 package?

The NCV8570MN300R2G in the DFN6 2×2.2 mm package has a junction-to-ambient thermal resistance (R_θJA) of 120 °C/W under standard JEDEC test conditions (1 oz copper, 1 in² pad). With 2 oz copper and increased PCB copper area, R_θJA improves to 37 °C/W junction-to-lead - critical for sustaining 200 mA continuous output in automotive ambient temperatures up to 85 °C.

How does the active discharge feature work in the NCV8570MN300R2G?

When the CE pin is pulled low, the NCV8570MN300R2G activates an internal discharge transistor between Vout and GND. This rapidly discharges the output capacitor, reducing turn-off time to under 1 ms (with 10 nF Cnoise). Power for this circuit is drawn from Vout itself - ensuring minimal sleep-mode current (<1 µA) while guaranteeing fast, controlled power-down essential for automotive domain controllers with strict sequencing requirements.