Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

Renesas NE3503M04-T2-A

Name: NE3503M04-T2-A
Brand: Renesas
SKU: NE3503M04-T2-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NE3503M04-T2-A

Manufacturer:: Renesas

Category:: Single FETs, MOSFETs

Package:: SOT-343F

Datasheet:: NE3503M04-T2-A.pdf

Description:: RF MOSFET HFET 2V M04

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:28,784

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NE3503M04-T2-A from Renesas Electronics is an N-channel heterojunction field-effect transistor (HJ-FET) designed for C-to-Ku-band ultra-low-noise, high-gain RF amplification. It delivers a typical noise figure of 0.45 dB and associated gain of 12.0 dB at 12 GHz under V_DS = 2 V, I_D = 10 mA, and is packaged in a flat-lead 4-pin thin-type super minimold (M04) for DBS LNB gain-stage and mixer-stage applications.

For engineers reviewing the NE3503M04-T2-A datasheet, NE3503M04-T2-A pinout, NE3503M04-T2-A application, or NE3503M04-T2-A equivalent, key selection criteria include its GaAs-based HJ-FET architecture, 0.45 dB NF_min at 12 GHz, 55 mS transconductance, −0.7 V typical V_GS(off), and M04 package thermal and mounting constraints.

Technical Context

This GaAs HJ-FET operates as a single-stage microwave amplifier with fixed-bias capability, optimized for low-noise performance in the 10–15 GHz range. Its gate width is 160 μm, and it requires V_DS between 1–3 V and I_D between 5–15 mA for stable operation.

The device exhibits strong frequency-dependent gain and noise behavior: Ga drops from ~12 dB at 12 GHz to ~8 dB at 15 GHz, while NF_min rises from 0.45 dB to ~0.7 dB over the same band. S-parameters are provided in industry-standard Touchstone (.s2p) format for simulation integration.

Key Specifications

Parameter	Value and Actual Design Meaning
Noise Figure (NF)	0.45 dB typ. @ 12 GHz - enables high-sensitivity satellite signal reception in DBS LNB front-ends
Associated Gain (Ga)	12.0 dB typ. @ 12 GHz - provides sufficient first-stage amplification before downconversion
Transconductance (g_m)	55 mS typ. @ V_DS = 2 V, I_D = 10 mA - supports stable small-signal gain control and bias linearity
V_GS(off)	−0.7 V typ. - defines gate bias point for depletion-mode operation without external negative supply
IDSS	40 mA typ. @ V_DS = 2 V - sets maximum drain current under zero-gate condition, critical for DC bias design
Max V_DS	4.0 V - limits supply rail headroom and dictates PCB trace voltage isolation requirements
P_tot	125 mW - constrains thermal pad area and heatsinking in compact LNB modules

Pinout & Package

NE3503M04-T2-A is housed in a flat-lead 4-pin thin-type super minimold (M04) package, Pb-free, with 0.65 mm lead pitch and bottom-view pin 1 (Source) aligned to tape perforation side. Mounting pad dimensions require 0.74 mm × 0.8 mm solder land per lead with 1.0 mm center-to-center spacing.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Main current return path; tied to RF ground plane in LNB designs for minimal inductance
2	Drain	RF output node; requires impedance-matched microstrip and DC blocking capacitor
3	Source	Second source terminal for improved thermal conduction and current sharing in high-reliability LNBs
4	Gate	High-impedance RF input; must be isolated from DC bias via RF choke and decoupling network

Key Features

Feature	Design Value
Super low noise figure	0.45 dB typ. at 12 GHz enables >1 dB system noise temperature improvement in Ku-band LNBs
High associated gain	12.0 dB typ. reduces need for cascaded stages, lowering overall power consumption and board space
M04 thin-type super minimold	Compact 2.05 mm × 1.25 mm footprint with flat leads supports automated placement and reflow in high-volume LNB assembly
GaAs HJ-FET technology	Superior f_T and f_max vs. Si or SiGe devices enables stable operation up to 15 GHz with low flicker noise
Depletion-mode operation	Negates need for negative gate supply; simplifies bias network using single positive rail and source degeneration resistor

Applications

DBS Satellite LNB Gain Stage	DBS Satellite LNB Mixer Stage
Use Scenario: Amplifying weak 10.7–12.75 GHz satellite signals immediately after the feedhorn and before downconversion in consumer-grade direct broadcast satellite receivers. IC Role / Device Role / Timing Role: First-stage low-noise amplifier (LNA) providing primary noise figure contribution to the entire receiver chain. Use Value: 0.45 dB NF_min directly improves system G/T ratio, enabling reliable reception under marginal signal conditions (e.g., rain fade).	Use Scenario: Providing local oscillator (LO) injection amplification and RF pre-amplification ahead of active diode mixers in dual-conversion LNB architectures. IC Role / Device Role / Timing Role: LO buffer and RF gain block integrated into the same M04 package to minimize interstage loss and parasitic coupling. Use Value: 12.0 dB Ga at 12 GHz ensures adequate LO drive level while maintaining isolation between RF and LO ports.
Microwave Point-to-Point Radio Front-End	Test Equipment Low-Noise Preamp Module
Use Scenario: Serving as receive-path LNA in 11–13 GHz licensed microwave backhaul radios operating in ETSI/IEEE 802.16 bands. IC Role / Device Role / Timing Role: Wideband RF amplifier with flat gain response across 10–15 GHz, used before IF conversion and demodulation. Use Value: 55 mS g_m and −0.7 V V_GS(off) allow precise DC bias tuning to optimize linearity (IP3) versus noise trade-off.	Use Scenario: Embedded in calibrated spectrum analyzer or vector network analyzer front-end modules requiring repeatable sub-0.5 dB NF performance. IC Role / Device Role / Timing Role: Reference-grade gain element with documented S-parameters and noise parameters for traceable calibration. Use Value: Provided .s2p files enable accurate EM co-simulation of matching networks, reducing prototype iterations.

DBS Satellite LNB Gain Stage

DBS Satellite LNB Mixer Stage

Use Scenario: Amplifying weak 10.7–12.75 GHz satellite signals immediately after the feedhorn and before downconversion in consumer-grade direct broadcast satellite receivers.

IC Role / Device Role / Timing Role: First-stage low-noise amplifier (LNA) providing primary noise figure contribution to the entire receiver chain.

Use Value: 0.45 dB NF_min directly improves system G/T ratio, enabling reliable reception under marginal signal conditions (e.g., rain fade).

Use Scenario: Providing local oscillator (LO) injection amplification and RF pre-amplification ahead of active diode mixers in dual-conversion LNB architectures.

IC Role / Device Role / Timing Role: LO buffer and RF gain block integrated into the same M04 package to minimize interstage loss and parasitic coupling.

Use Value: 12.0 dB Ga at 12 GHz ensures adequate LO drive level while maintaining isolation between RF and LO ports.

Microwave Point-to-Point Radio Front-End

Test Equipment Low-Noise Preamp Module

Use Scenario: Serving as receive-path LNA in 11–13 GHz licensed microwave backhaul radios operating in ETSI/IEEE 802.16 bands.

IC Role / Device Role / Timing Role: Wideband RF amplifier with flat gain response across 10–15 GHz, used before IF conversion and demodulation.

Use Value: 55 mS g_m and −0.7 V V_GS(off) allow precise DC bias tuning to optimize linearity (IP3) versus noise trade-off.

Use Scenario: Embedded in calibrated spectrum analyzer or vector network analyzer front-end modules requiring repeatable sub-0.5 dB NF performance.

IC Role / Device Role / Timing Role: Reference-grade gain element with documented S-parameters and noise parameters for traceable calibration.

Use Value: Provided .s2p files enable accurate EM co-simulation of matching networks, reducing prototype iterations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise GaAs FET amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NE3503M04-T1-A	Same die, 50 pcs non-reel packaging; no embossed tape; identical electrical specs and M04 footprint	Intended for evaluation and low-volume prototyping rather than production reel-fed SMT lines	Select when needing sample quantities or manual assembly verification prior to full reel procurement
ATF-54143	0.35 dB NF_min @ 2 GHz (not at 12 GHz); higher g_m (65 mS); different SOT-343 package with 0.65 mm pitch but distinct pinout (G-S-D-S)	Better suited for sub-6 GHz infrastructure; not validated for Ku-band LNB use per Renesas characterization	Consider only for lower-frequency designs where 12 GHz performance is not required; verify layout compatibility due to pinout mismatch

Compared with NE3503M04-T2-A, NE3503M04-T1-A offers identical RF performance in a non-reel format ideal for validation, while ATF-54143 trades Ku-band optimization for broader low-frequency coverage and higher gain-but requires redesign due to incompatible pin mapping and unverified 12 GHz noise behavior.

Availability

NE3503M04-T2-A is available at Aetrix Electronics and suitable for DBS LNB gain-stage designs, microwave point-to-point radio front-ends, and test equipment low-noise preamp modules requiring stable component supply, consistent M04 packaging, and verified 12 GHz noise performance.

Supply support for NE3503M04-T2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and RF solutions.

The NE3503M04 series belongs to Renesas' legacy GaAs microwave transistor product line, engineered specifically for ultra-low-noise amplification in satellite communication and high-frequency wireless infrastructure.

FAQ

What is the absolute maximum drain-to-source voltage rating for NE3503M04-T2-A?

The absolute maximum drain-to-source voltage (V_DS) for NE3503M04-T2-A is 4.0 V at T_A = +25°C. Exceeding this rating risks permanent gate oxide damage or channel breakdown. The recommended operating range is 1–3 V; designs should include overvoltage clamping on the drain line and ensure PCB layout avoids transient spikes during hot-plug or power sequencing events involving NE3503M04-T2-A.

Does NE3503M04-T2-A require a negative gate voltage to operate?

No, NE3503M04-T2-A is a depletion-mode N-channel HJ-FET and operates with zero or slightly positive gate-to-source voltage (V_GS). Its typical V_GS(off) is −0.7 V, meaning it conducts at V_GS = 0 V. Bias is typically implemented using a source degeneration resistor to set I_D = 10 mA at V_DS = 2 V-no negative supply is needed for NE3503M04-T2-A in standard LNB configurations.

Where can I obtain S-parameter and noise parameter files for NE3503M04-T2-A?

S-parameter and noise parameter data for NE3503M04-T2-A are published by Renesas in Touchstone (.s2p) format on their official microwave device portal. Users can download them directly from http://www.necel.com/microwave/en/ under [RF and Microwave] → [Device Parameters]. These files are measured at V_DS = 2 V, I_D = 10 mA, and cover 0.5–20 GHz, enabling accurate linear simulation of NE3503M04-T2-A in ADS, AWR, or Cadence environments.

Is NE3503M04-T2-A RoHS compliant and lead-free?

Yes, NE3503M04-T2-A is manufactured in a Pb-free flat-lead M04 package, conforming to EU RoHS Directive 2011/65/EU. The "-A" suffix in the part number explicitly denotes RoHS-compliant processing. Renesas confirms compliance in the PG10456EJ03V0DS datasheet and provides material declarations upon request through their sales office for NE3503M04-T2-A procurement.

What is the thermal resistance from channel to ambient for NE3503M04-T2-A?

The datasheet does not specify a numerical θ_JA value for NE3503M04-T2-A. However, its maximum channel temperature (T_ch) is +125°C and total power dissipation (P_tot) is 125 mW at T_A = +25°C. Thermal performance depends critically on PCB copper area: the recommended mounting pad layout (0.74 mm × 0.8 mm per lead, with thermal vias under the package body) achieves effective heat spreading. Derating curves show P_tot decreases to ~60 mW at T_A = +85°C for NE3503M04-T2-A.

NE3503M04-T2-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: SOT-343F

Packaging:: Bulk

Product Status:: Obsolete

Technology:: HFET

Configuration:: -

Frequency:: 12GHz

Gain:: 12dB

Voltage - Test:: 2 V

Current Rating (Amps):: 70mA

Noise Figure:: 0.45dB

Current - Test:: 10 mA

Power - Output:: -

Voltage - Rated:: 4 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: M04

NE3503M04-T2-A FAQ

1.How can I place an order for NE3503M04-T2-A through Aetrix?

Please submit a Request for Quotation (RFQ) for NE3503M04-T2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NE3503M04-T2-A reliable?

The price and inventory of NE3503M04-T2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NE3503M04-T2-A is usually 5 days.

3.What payment methods are accepted for NE3503M04-T2-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NE3503M04-T2-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NE3503M04-T2-A?

NE3503M04-T2-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NE3503M04-T2-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NE3503M04-T2-A?

For technical support, including NE3503M04-T2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NE3503M04-T2-A requirements.

6.How does Aetrix verify that NE3503M04-T2-A is sourced from the original manufacturer or authorized distributors?

All NE3503M04-T2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NE3503M04-T2-A meets industry standards.

7.What is the process for return or replacement of NE3503M04-T2-A?

All NE3503M04-T2-A units undergo pre-shipment inspection (PSI). If there is an issue with NE3503M04-T2-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NE3503M04-T2-A part is unused and in its original packaging.

Return procedure for NE3503M04-T2-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…