Renesas NE3510M04-T2-A

Overview

NE3510M04-T2-A from Renesas Electronics is an N-channel heterojunction field-effect transistor (HJ-FET) designed as a low-noise amplifier for L- to S-band RF applications, delivering 0.45 dB typical noise figure and 16 dB typical associated gain at 4 GHz with 2 V drain-source voltage and 15 mA drain current, used in satellite radio antenna LNAs and microwave communication receivers.

For engineers reviewing the NE3510M04-T2-A datasheet, NE3510M04-T2-A pinout, NE3510M04-T2-A application, or NE3510M04-T2-A equivalent, this page provides verified package mapping, validated S-band LNA performance parameters, confirmed M04 super minimold footprint, and two industry-recognized GaAs HJ-FET alternatives with documented electrical and thermal trade-offs.

Technical Context

This GaAs-based HJ-FET operates in depletion mode with gate-to-source cutoff voltage ranging from −0.35 V to −1.10 V and saturated drain current of 42–97 mA at V_DS = 2 V. Its transconductance is specified at ≥70 mS under 15 mA bias, enabling stable small-signal amplification in narrowband front-end designs.

The device targets ultra-low-noise receiver stages where noise figure minimization and gain flatness across 2–4 GHz are critical; it requires fixed DC biasing (V_DS = 2–3 V, I_D = 15–30 mA) and is not internally matched-external input/output matching networks must be designed using provided S-parameters and noise parameters.

Key Specifications

Pinout & Package

NE3510M04-T2-A uses the flat-lead 4-pin thin-type super minimold (M04) package - Pb-free, surface-mountable, with 2.05 mm × 1.25 mm body size and 0.65 mm lead pitch. Mounting pad layout follows JEDEC MS-012AC guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise GaAs HJ-FET amplifier applications.

Compared with ATF-54143 and NE3210S01, NE3510M04-T2-A delivers the best balance of ultra-low NF, stable 16 dB gain, and proven reliability in satellite LNA applications - its 2–4 GHz optimization and M04 thermal profile make it preferred for space-constrained, thermally sensitive front-ends where consistent production yield is critical.

Availability

NE3510M04-T2-A is available at Aetrix Electronics and suitable for satellite radio antenna LNAs, microwave point-to-point receivers, and avionics communication systems requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for NE3510M04-T2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and RF solutions, with global R&D and manufacturing infrastructure supporting automotive, industrial, and communications markets.

The NE3510M04-T2-A belongs to Renesas' legacy GaAs HJ-FET product line, engineered specifically for ultra-low-noise RF amplification in L- to S-band satellite and microwave systems where thermal stability and reproducible noise performance are mission-critical.

FAQ

What is the maximum drain-source voltage rating for NE3510M04-T2-A?

The absolute maximum drain-source voltage (V_DS) for NE3510M04-T2-A is 4.0 V at T_A = +25°C. Operation above this rating risks permanent device failure. The recommended operating range is 2–3 V, with 2 V being the standard bias condition used to achieve the published 0.45 dB noise figure and 16 dB gain specs. Exceeding 3 V may increase power dissipation beyond the 125 mW limit without proportional gain improvement.

Does NE3510M04-T2-A require external matching networks?

Yes, NE3510M04-T2-A is an unmatched GaAs HJ-FET and requires external input and output matching networks to achieve optimal noise figure and gain. The datasheet provides S-parameters and noise parameters in downloadable S2P format for use in RF simulation tools. Matching components must be selected to transform 50 Ω system impedance to the device's optimal source and load impedances at the target frequency (e.g., 4 GHz).

What is the gate-to-source cutoff voltage range for NE3510M04-T2-A?

The gate-to-source cutoff voltage (V_GS(off)) for NE3510M04-T2-A is specified from −0.35 V to −1.10 V at V_DS = 2 V and I_D = 100 μA. This wide range reflects process variation across wafers and units. For robust bias design, circuits should accommodate −0.7 V typical and ensure gate bias remains below −0.35 V to maintain pinch-off during worst-case conditions.

Is NE3510M04-T2-A RoHS compliant?

Yes, NE3510M04-T2-A is Pb-free and RoHS compliant, as confirmed by its "(Pb-Free)" designation in the ordering information and compliance with EU RoHS Directive requirements. The M04 package uses lead-free solderable terminations, and Renesas documents environmental compliance per applicable regulations including JIS C 0950 and JEITA ED-721.

What thermal management considerations apply to NE3510M04-T2-A?

NE3510M04-T2-A has a total power dissipation limit of 125 mW when mounted on a 1.08 cm² × 1.0 mm glass epoxy PCB. Its thermal resistance depends heavily on PCB copper area and via placement - the dual-source pins (1 and 3) must be connected to a solid ground plane with multiple thermal vias. Ambient temperature derating begins above +25°C, with P_tot decreasing linearly to zero at +150°C channel temperature.