Renesas NE3517S03-T1D-A

Overview

NE3517S03-T1D-A from Renesas Electronics is an N-channel GaAs heterojunction field-effect transistor (HJ-FET) designed as a super low-noise amplifier for K-band RF front-ends. It delivers 0.7 dB typical noise figure and 13.5 dB typical associated gain at 20 GHz, with 2 V drain-to-source voltage and 10 mA drain current. It is used in 20 GHz DBS LNBs and other K-band communication receivers.

For engineers reviewing the NE3517S03-T1D-A datasheet, NE3517S03-T1D-A pinout, NE3517S03-T1D-A application, or NE3517S03-T1D-A equivalent, key selection criteria include its GaAs HJ-FET architecture, S03 plastic package, 0.7 dB NF at 20 GHz, 13.5 dB Ga, and gate-source cutoff voltage of −0.7 V.

Technical Context

The NE3517S03-T1D-A operates as a depletion-mode GaAs HJ-FET optimized for high-frequency low-noise amplification. Its transconductance of 55 mS and cutoff voltage range of −0.2 to −1.5 V enable precise DC bias control in narrowband K-band LNA designs.

It requires stable 1–3 V drain supply and gate biasing to maintain operation within its recommended ID range of 5–15 mA. The device's S-parameters and noise parameters are provided in industry-standard S2P format for direct import into microwave simulation tools.

Key Specifications

Pinout & Package

S03 is a 4-pin surface-mount plastic package measuring 3.2 mm × 2.2 mm × 1.5 mm max, with gold-plated terminals and Pb-free finish. Pin 1 and Pin 3 are internally connected to Source; Pin 2 is Drain; Pin 4 is Gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise GaAs FET amplifier applications.

Compared with NE3517S03-T1D-A, the NE3517M03-T1D-A offers identical RF performance in a shielded metal package but sacrifices board space and thermal efficiency, while the ATF-54143 targets lower frequencies and cannot replace NE3517S03-T1D-A in 20 GHz LNB applications due to frequency-limited gain and noise performance.

Availability

NE3517S03-T1D-A is available at Aetrix Electronics and suitable for 20 GHz DBS LNBs, K-band point-to-point radios, and automotive radar sensor front-ends requiring stable component supply, Pb-free compliance, and repeatable RF performance.

Supply support for NE3517S03-T1D-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and RF solutions.

The NE3517 series belongs to Renesas' legacy GaAs HJ-FET amplifier product line, engineered specifically for K-band low-noise receiver applications including satellite communications and millimeter-wave sensing.

FAQ

What is the primary function of the NE3517S03-T1D-A in RF systems?

The NE3517S03-T1D-A functions as a depletion-mode N-channel GaAs heterojunction field-effect transistor optimized for low-noise amplification in the K-band. Its core role is to provide high gain and minimal added noise-0.7 dB NF and 13.5 dB Ga at 20 GHz-making it ideal for first-stage amplification in satellite LNBs and radar receivers. The NE3517S03-T1D-A is not a complete IC but a discrete active RF device requiring external biasing and impedance matching.

What are the absolute maximum ratings for the NE3517S03-T1D-A?

The NE3517S03-T1D-A has an absolute maximum drain-to-source voltage of 4 V, gate-to-source voltage of −3 V, drain current of IDSS (up to 70 mA), gate current of 100 μA, total power dissipation of 165 mW on a specified glass-epoxy PCB, and channel temperature limit of +125°C. Exceeding any of these-especially V_GS beyond −3 V or P_tot beyond 165 mW-risks permanent degradation. The NE3517S03-T1D-A must be operated within its recommended conditions: V_DS = 1–3 V and I_D = 5–15 mA.

How does the S03 package of the NE3517S03-T1D-A affect PCB layout?

The S03 package of the NE3517S03-T1D-A measures 3.2 mm × 2.2 mm with a 1.5 mm max height and features a defined tape orientation: Pin 4 (Gate) faces the perforation side. Its dual-source configuration (Pins 1 and 3) enables low-inductance grounding, critical for K-band stability. Layout must minimize trace length (<1 mm), use controlled-impedance microstrip, and incorporate thermal vias under the exposed pad. The NE3517S03-T1D-A requires IR reflow per JEDEC J-STD-020 (peak 260°C, ≤10 s).

Can the NE3517S03-T1D-A be used in automotive radar applications?

Yes-the NE3517S03-T1D-A is rated for Standard quality grade and is documented for use in transportation equipment including automotive radar sensors operating near 24 GHz. Its 0.7 dB NF at 20 GHz and stable transconductance support high-sensitivity receiver front-ends. However, it is not qualified for safety-critical "Specific" grade applications like life-support systems. System-level validation-including thermal cycling, ESD robustness, and long-term bias stability-is required before deployment. The NE3517S03-T1D-A must be used within its specified V_DS/I_D envelope.

Where can I obtain S-parameter data for the NE3517S03-T1D-A?

S-parameter and noise parameter data for the NE3517S03-T1D-A are published by Renesas Electronics in S2P file format, directly importable into Keysight ADS, Cadence AWR, and other microwave simulators. These files are hosted on the Renesas Microwave portal under [RF and Microwave] → [Device Parameters], accessible via http://www.necel.com/microwave/en/. The NE3517S03-T1D-A data covers 10–26.5 GHz and includes both cold and hot S-parameters referenced to 50 Ω.