NXP Semiconductors NE57810S,518

Overview

NE57810S,518 from NXP Semiconductors is a linear DDR memory termination regulator that delivers precise VTT voltage at half the DDR supply (VDD/2), supports ±3.5 A continuous sourcing/sinking, features internal overcurrent and overtemperature protection, and is optimized for DDR-I (2.5 V) and DDR-II (1.8 V) SDRAM bus termination in high-density computing systems.

For engineers reviewing the NE57810S,518 datasheet, NE57810S,518 pinout, NE57810S,518 application, or NE57810S,518 equivalent, key selection criteria include its fast transient response, thermal robustness in SOT756 package, external reference input flexibility, and guaranteed VTT accuracy of ±15 mV under load.

Technical Context

The NE57810S,518 implements a precision linear regulator architecture with an internal 100 kΩ/100 kΩ resistor divider between VDD and VSS to generate the reference node for VTT regulation. Its output stage actively sources and sinks current to maintain stable termination voltage during rapid DDR bus state transitions up to 266 MHz.

It operates across 1.6 V–3.6 V VDD input range, delivers VTT within ±15 mV accuracy versus VDD/2, exhibits ±6 mV load regulation at ±1.0 A, and provides RefOut buffered at 0.5×VDD when ExtRefIn is unconnected - enabling synchronization of multiple terminators in cascaded memory bank configurations.

Key Specifications

Pinout & Package

NE57810S,518 is housed in a thermally enhanced plastic single-ended surface-mounted SOT756 package (5 leads) with an exposed thermal pad electrically connected to VSS - used to improve thermal conductivity but not as primary ground connection per device specifications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR termination regulator applications.

Compared with TPS51100DGQ and ISL6537CRZ, NE57810S,518 uniquely combines internal VDD/2 tracking, RefOut buffering for cascading, and ExtRefIn programmability - making it the optimal choice for noise-sensitive, space-constrained DDR-I/DDR-II termination where design simplicity and signal integrity are prioritized over peak efficiency.

Availability

NE57810S,518 is available at Aetrix Electronics and suitable for desktop microcomputer systems, workstations, and servers requiring stable component supply for DDR memory termination in commercial-temperature environments.

Supply support for NE57810S,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The NE57810S,518 belongs to NXP's DDR power management product line, engineered specifically to simplify and enhance reliability of DDR-I and DDR-II memory bus termination in high-performance computing platforms.

FAQ

What is the primary function of the NE57810S,518 in a DDR memory system?

The NE57810S,518 serves as a linear DDR termination regulator that generates a precise VTT voltage equal to half the DDR supply voltage (VDD/2). It actively sources and sinks up to ±3.5 A to maintain stable termination across high-speed DDR-I and DDR-II memory buses, directly replacing discrete resistor networks and op-amp solutions. Its design ensures signal integrity during rapid bus state transitions without requiring external inductors or switching FETs.

How does the NE57810S,518 achieve VTT voltage accuracy, and what is its typical tolerance?

The NE57810S,518 achieves VTT accuracy through an internal matched 100 kΩ/100 kΩ resistor divider between VDD and VSS, establishing a reference node for regulation. Its VTT output maintains ±15 mV accuracy relative to the ideal VDD/2 value across 0 °C to +70 °C ambient temperature and full ±3.5 A load range. This specification is explicitly verified in Table 5 of the NXP datasheet under "VACC = VTT − VDD/2".

Can the NE57810S,518 be used with DDR3 memory systems?

No, the NE57810S,518 is not designed for DDR3 memory systems. Its datasheet explicitly states compatibility only with DDR-I (VDD = 2.5 V) and DDR-II (VDD = 1.8 V) SDRAM systems. DDR3 requires VDD = 1.5 V and tighter VTT tolerances (±10 mV), and the NE57810S,518's minimum VDD rating is 1.6 V with ±15 mV accuracy - falling outside DDR3 specification requirements.

What is the purpose of the ExtRefIn and RefOut pins on the NE57810S,518?

The ExtRefIn (Pin 4) allows external programming of the VTT output voltage, enabling operation where VTT is not derived from VDD/2 - such as when sourcing from a separate power rail. The RefOut (Pin 5) provides a buffered, low-impedance copy of the internal reference (0.5×VDD when ExtRefIn is unconnected), facilitating synchronization of multiple NE57810S,518 units in cascaded memory bank configurations without VTT mismatch.

What thermal design considerations apply to the NE57810S,518 in a real-world PCB layout?

The NE57810S,518 requires careful thermal management due to its linear architecture: average power dissipation ranges from 0.8 W to 1.5 W, with peak junction temperature limited to 160 °C. NXP specifies a minimum PCB copper island area of 225 mm² (15 mm × 15 mm, 2 oz copper) to maintain junction temperature ≤125 °C at 70 °C ambient. The thermal pad on the rear must be soldered to a dedicated VSS copper pour - not used as sole ground path - and the VSS pin remains the primary ground reference per datasheet guidance.