NXP Semiconductors NE57810S/N1,518

Overview

NE57810S/N1,518 from NXP Semiconductors is a linear DDR termination regulator designed to supply VTT (termination voltage) at precisely half the DDR memory supply voltage (VDD), supporting both DDR-I (2.5 V) and DDR-II (1.8 V) systems. It delivers ±3.5 A continuous output current, features internal overcurrent and overtemperature protection, and eliminates need for external inductors or switching FETs. It is used on DIMM modules and memory controllers in high-speed computing platforms.

For engineers reviewing the NE57810S/N1,518 datasheet, NE57810S/N1,518 pinout, NE57810S/N1,518 application, or NE57810S/N1,518 equivalent, key selection criteria include guaranteed VTT = VDD/2 accuracy (±15 mV), fast transient response under ±3.5 A load steps, thermal robustness in SOT756 package, and support for external reference input for non-standard VTT configurations.

Technical Context

The NE57810S/N1,518 implements a precision linear regulator architecture with an internal 100 kΩ/100 kΩ resistor divider between VDD and VSS, establishing the reference node for both VTT regulation and RefOut buffering. Its output stage is optimized for bidirectional current sourcing and sinking-critical for DDR bus termination where instantaneous current demand swings between +3.5 A and −3.5 A during bus state transitions.

It operates exclusively in linear mode, enabling sub-microsecond transient response without switching noise, and supports two operating modes: default VTT = VDD/2 (via internal divider) and externally programmed VTT (via ExtRefIn pin). Cascading via RefOut→ExtRefIn enables synchronized multi-terminator systems without output voltage mismatch.

Key Specifications

Pinout & Package

NE57810S/N1,518 is housed in a thermally enhanced plastic single-ended surface-mounted package (SOT756) with 5 leads and an exposed thermal pad electrically connected to VSS. The package measures 9.60 × 5.75 mm with 0.76 mm lead pitch and supports high-power dissipation in compact memory subsystem layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR termination regulator applications.

Compared with TPS51100PWR and ISL6537CRZ, the NE57810S/N1,518 uniquely combines linear-noise immunity, external reference programmability, and integrated RefOut buffering-making it optimal for noise-sensitive, high-speed DDR-II systems requiring precise, synchronized termination across multiple memory channels.

Availability

NE57810S/N1,518 is available at Aetrix Electronics and suitable for desktop microcomputer systems, server memory subsystems, and embedded set-top box DDR interfaces requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for NE57810S/N1,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication applications.

The NE57810S/N1,518 belongs to NXP's DDR power management product line, engineered specifically to replace discrete termination solutions in high-speed memory subsystems while minimizing board area, component count, and design complexity.

FAQ

What is the maximum continuous output current capability of the NE57810S/N1,518?

The NE57810S/N1,518 delivers ±3.5 A continuously under specified conditions (Tamb = 0 °C to +70 °C, VDD = 2.5 V). This bidirectional current supports worst-case DDR bus loading with up to 192 terminated lines using 27 Ω resistors. Current limit threshold is 3.6 A (typical), rising to 6.5 A under short-circuit conditions per datasheet Table 5.

Can the NE57810S/N1,518 operate with DDR-III memory systems?

No-the NE57810S/N1,518 is explicitly qualified for DDR-I (VDD = 2.5 V) and DDR-II (VDD = 1.8 V) systems per its datasheet Section 3 and Table 5. DDR-III requires VDD = 1.5 V and tighter VTT tolerance (±10 mV), which exceeds the NE57810S/N1,518's ±15 mV specification and operational range (min VDD = 1.6 V).

How does the ExtRefIn pin affect VTT accuracy in the NE57810S/N1,518?

When ExtRefIn is used, VTT accuracy depends on the external reference voltage applied-not the internal VDD/2 divider. Datasheet Table 5 specifies ±15 mV accuracy at the ExtRefIn pin itself, meaning VTT tracks that reference with same tolerance. Input impedance is 35–50 kΩ, so source impedance must be <1 kΩ to avoid accuracy degradation.

Is the thermal pad on the NE57810S/N1,518 electrically connected, and how should it be used?

Yes-the thermal pad on the rear of the NE57810S/N1,518 is electrically connected to VSS internally (per Pinning Information Section 7.1). It must be soldered to a VSS copper pour for thermal performance but cannot replace the VSS pin (Pin 3) as the primary ground connection, as device specifications require VSS pin routing for functional grounding.

What is the minimum recommended output capacitance for stable operation of the NE57810S/N1,518?

Datasheet Table 5 specifies a minimum stable load capacitance of 0.1 µF (ceramic only) for the NE57810S/N1,518. For full ±3.5 A transient support, NXP recommends ≥100 µF total ceramic capacitance distributed across the memory array-e.g., ten 10 µF 0805 X7R devices-plus ≥470 µF low-ESR electrolytic for low-frequency filtering.