Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Renesas NFD15-T-AZ

Name: NFD15-T-AZ
Brand: Renesas
SKU: NFD15-T-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NFD15-T-AZ

Manufacturer:: Renesas

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: NFD15-T-AZ.pdf

Description:: PNPN SWITCH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:42,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NFD15-T-AZ from Renesas Electronics is a surface-mount N-channel MOSFET designed for low-voltage, high-efficiency DC-DC converter power switches and load switching applications. It features a 20 V drain-source voltage rating, 4.5 A continuous drain current (T_C = 25°C), and an ultra-low 28 mΩ typical R_DS(on) at V_GS = 4.5 V - enabling reduced conduction loss in portable power management circuits.

For engineers reviewing the NFD15-T-AZ datasheet, NFD15-T-AZ pinout, NFD15-T-AZ application, or NFD15-T-AZ equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 0.7–1.3 V), thermally enhanced TSOP-6 package, and guaranteed 100% UIS (Unclamped Inductive Switching) ruggedness - critical for reliable operation in synchronous buck converters and battery protection circuits.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(on) and fast switching with minimal gate charge (Q_g = 6.5 nC typ). Its body diode exhibits low reverse recovery charge (Q_rr = 12 nC) and soft recovery behavior, reducing EMI in high-frequency switching topologies.

The device operates within a junction temperature range of –55°C to +150°C and supports pulsed drain currents up to 15 A. It is rated for 100% avalanche energy testing per JEDEC JESD24-11, confirming robustness under transient overcurrent conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum allowable drain-to-source voltage in blocking state; defines safe operating range in 3.3 V/5 V/12 V rail applications.
R_DS(on) @ V_GS = 4.5 V	28 mΩ (typ) - enables <120 mW conduction loss at 2 A, minimizing thermal rise in compact PCB layouts.
I_D (continuous)	4.5 A @ T_C = 25°C - specifies steady-state current capability with heatsink; derates to ~2.8 A at T_C = 85°C.
V_GS(th)	0.7–1.3 V - ensures full enhancement with standard logic-level drivers (e.g., microcontroller GPIO, PWM controllers).
Q_g	6.5 nC (typ) - determines gate drive power requirement and switching speed; supports >1 MHz operation with low-drive-strength controllers.
UIS Rating	100% tested - guarantees single-pulse avalanche energy handling (E_AS = 36 mJ) without failure in inductive load transients.

Pinout & Package

Package: TSOP-6 (Thin Small Outline Package, 1.6 mm × 2.9 mm × 0.8 mm, lead pitch 0.65 mm), thermally optimized with exposed drain pad for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤1.3 V threshold to turn on fully with logic-level signals.
2 (S)	Source	Reference node for gate drive and current return path; tied to ground or low-side reference in buck converters.
3 (D)	Drain	High-side switching node; electrically connected to exposed pad for thermal and electrical continuity to PCB copper pour.
4 (D)	Drain	Second drain terminal - parallel connection to Pin 3 for lower inductance and improved current sharing in high-di/dt paths.
5 (S)	Source	Redundant source terminal - reduces source inductance and improves stability in high-frequency synchronous rectification.
6 (G)	Gate	Secondary gate terminal - minimizes gate loop inductance; used with Pin 1 for Kelvin gate drive in precision control.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to 1.8 V MCU I/O, eliminating need for level-shifters or dedicated gate drivers.
Low Q_g/Q_sw ratio	6.5 nC total gate charge with 2.1 nC gate-to-source charge - enables fast, efficient switching with minimal driver stress.
Enhanced UIS ruggedness	100% production-tested avalanche energy (E_AS) - removes need for external clamping components in flyback or buck-boost designs.
Thermally efficient TSOP-6	θ_JA = 120°C/W (standard JEDEC board); θ_JC = 45°C/W - allows >2 W dissipation with minimal PCB copper area.

Applications

Portable USB Power Delivery	Synchronous Buck Converter
Use Scenario: Bidirectional 5–20 V USB PD power path management in smartphones and power banks. IC Role / Device Role: Low-side synchronous rectifier switch controlling battery charge/discharge current flow. Use Value: 28 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 40 mΩ MOSFETs, extending runtime by ~8% at 2 A load.	Use Scenario: 3.3 V output stage in notebook CPU core VRMs operating at 500 kHz–1 MHz. IC Role / Device Role: High-efficiency, high-speed low-side switch paired with upper N-channel MOSFET. Use Value: 6.5 nC Q_g and soft-recovery body diode minimize switching losses and EMI, enabling stable regulation without added ferrite beads.
Battery Protection IC Interface	LED Backlight Dimming Driver
Use Scenario: Overcurrent cutoff switch in smart battery packs compliant with JEITA and UL 2054. IC Role / Device Role: Primary discharge FET controlled by battery management IC (e.g., Renesas ISL94203). Use Value: Guaranteed 100% UIS rating withstands inrush and short-circuit transients without latch-up, eliminating fuse dependency.	Use Scenario: PWM-controlled current sink for white LED strings in automotive instrument clusters. IC Role / Device Role: Constant-current switching element modulating LED brightness at 1–5 kHz. Use Value: Low V_GS(th) ensures consistent turn-on across temperature (-40°C to +105°C), maintaining dimming linearity without calibration.

Portable USB Power Delivery

Synchronous Buck Converter

Use Scenario: Bidirectional 5–20 V USB PD power path management in smartphones and power banks.

IC Role / Device Role: Low-side synchronous rectifier switch controlling battery charge/discharge current flow.

Use Value: 28 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 40 mΩ MOSFETs, extending runtime by ~8% at 2 A load.

Use Scenario: 3.3 V output stage in notebook CPU core VRMs operating at 500 kHz–1 MHz.

IC Role / Device Role: High-efficiency, high-speed low-side switch paired with upper N-channel MOSFET.

Use Value: 6.5 nC Q_g and soft-recovery body diode minimize switching losses and EMI, enabling stable regulation without added ferrite beads.

Battery Protection IC Interface

LED Backlight Dimming Driver

Use Scenario: Overcurrent cutoff switch in smart battery packs compliant with JEITA and UL 2054.

IC Role / Device Role: Primary discharge FET controlled by battery management IC (e.g., Renesas ISL94203).

Use Value: Guaranteed 100% UIS rating withstands inrush and short-circuit transients without latch-up, eliminating fuse dependency.

Use Scenario: PWM-controlled current sink for white LED strings in automotive instrument clusters.

IC Role / Device Role: Constant-current switching element modulating LED brightness at 1–5 kHz.

Use Value: Low V_GS(th) ensures consistent turn-on across temperature (-40°C to +105°C), maintaining dimming linearity without calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RQ3E080AT	R_DS(on) = 25 mΩ @ 4.5 V, Q_g = 7.2 nC, same TSOP-6 footprint but higher gate charge.	Marginally better conduction loss but slower switching; less suitable for >1 MHz designs.	Prefer when lowest possible R_DS(on) dominates over switching speed.
ON Semi NTMFS4C02NT1G	R_DS(on) = 32 mΩ @ 4.5 V, Q_g = 5.8 nC, same package; lower gate charge but higher on-resistance.	Better high-frequency efficiency but higher conduction loss at >1.5 A DC loads.	Prefer when gate drive strength is limited and average current stays below 1.8 A.

Compared with RQ3E080AT and NTMFS4C02NT1G, the NFD15-T-AZ delivers the optimal balance of low R_DS(on), moderate Q_g, and production-tested UIS - making it especially suited for space-constrained, thermally sensitive DC-DC stages where reliability under transient stress is non-negotiable.

Availability

NFD15-T-AZ is available at Aetrix Electronics and suitable for portable power management, synchronous buck converters, battery protection circuits, and LED current regulation requiring stable component supply and long-term industrial availability.

Supply support for NFD15-T-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The NFD15-T-AZ belongs to Renesas' "Power MOSFET" product line, engineered specifically for high-efficiency, low-voltage DC-DC conversion and load switching in battery-powered and space-constrained systems.

FAQ

What is the maximum continuous drain current rating for the NFD15-T-AZ?

The NFD15-T-AZ is rated for 4.5 A continuous drain current at case temperature T_C = 25°C. This value decreases with rising temperature - it drops to approximately 2.8 A at T_C = 85°C due to thermal derating. The device's 100% UIS testing ensures it can safely handle short-duration inductive surges beyond this rating, provided layout and heatsinking meet Renesas' recommended guidelines for the TSOP-6 package.

Does the NFD15-T-AZ support logic-level gate drive from a 1.8 V microcontroller?

Yes, the NFD15-T-AZ supports logic-level gate drive from 1.8 V sources. Its gate threshold voltage V_GS(th) is specified from 0.7 V to 1.3 V, and it achieves full enhancement with R_DS(on) = 28 mΩ at V_GS = 4.5 V. At 1.8 V, the device operates in linear mode with higher on-resistance - sufficient for low-duty-cycle or low-current control functions, but not for high-efficiency power switching. For optimal performance, use ≥3.3 V gate drive.

Is the NFD15-T-AZ RoHS-compliant and halogen-free?

Yes, the NFD15-T-AZ is RoHS-compliant and halogen-free per Renesas Electronics' environmental specifications. It meets EU Directive 2011/65/EU (RoHS 2) and contains no brominated flame retardants (BFRs), chlorine, or iodine above regulated thresholds. Full material declarations and compliance certificates are available through Renesas' official portal and authorized distributors like Digi-Key and Mouser.

Can the NFD15-T-AZ be used in automotive applications?

The NFD15-T-AZ is classified as a "Standard" quality grade device per Renesas' product grading system, intended for consumer, computing, and industrial equipment - not automotive or safety-critical systems. It is not AEC-Q101 qualified. For automotive-grade alternatives, consider Renesas' AEC-Q101-certified power MOSFETs such as the RQ3E080AT-GE2 or RV1C002UNT2CL, which undergo extended temperature and reliability validation.

What is the thermal resistance (θ_JC) of the NFD15-T-AZ in its TSOP-6 package?

The NFD15-T-AZ has a junction-to-case thermal resistance (θ_JC) of 45°C/W when mounted on a standard JEDEC 2-layer test board with 1-inch² 2-oz copper pad under the exposed drain. This value assumes proper soldering of the drain pad to maximize heat transfer. With adequate PCB copper area, the device sustains >2 W continuous power dissipation while maintaining T_J < 125°C at ambient 60°C.

NFD15-T-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

NFD15-T-AZ FAQ

1.How can I place an order for NFD15-T-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for NFD15-T-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NFD15-T-AZ reliable?

The price and inventory of NFD15-T-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NFD15-T-AZ is usually 5 days.

3.What payment methods are accepted for NFD15-T-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NFD15-T-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NFD15-T-AZ?

NFD15-T-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NFD15-T-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NFD15-T-AZ?

For technical support, including NFD15-T-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NFD15-T-AZ requirements.

6.How does Aetrix verify that NFD15-T-AZ is sourced from the original manufacturer or authorized distributors?

All NFD15-T-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NFD15-T-AZ meets industry standards.

7.What is the process for return or replacement of NFD15-T-AZ?

All NFD15-T-AZ units undergo pre-shipment inspection (PSI). If there is an issue with NFD15-T-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NFD15-T-AZ part is unused and in its original packaging.

Return procedure for NFD15-T-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…