Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. NHDTA114ETR

Part No.:
NHDTA114ETR
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixNHDTA114ETR.pdf
Description:
TRANS PREBIAS PNP 80V TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:32,850

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

NHDTA114ETR from Nexperia is a PNP resistor-equipped transistor (RET) in SOT23 package, designed for digital switching and IC input control. It features 80 V collector-emitter breakdown voltage, 100 mA output current capability, built-in 10 kΩ base resistors (R1 = R2), and AEC-Q101 qualification for automotive-grade reliability. Used in load switching and logic-level interfacing where component count reduction is critical.

For engineers reviewing the NHDTA114ETR datasheet, NHDTA114ETR pinout, NHDTA114ETR application, or NHDTA114ETR equivalent, this page provides verified pin functions, thermal derating curves, on/off-state input voltage thresholds, saturation voltage at 10 mA, and direct alternatives to BC856-series discrete transistors in cost-sensitive digital circuits.

Technical Context

This device integrates a PNP bipolar transistor with two monolithic silicon resistors (R1 = R2 = 10 kΩ) to form a single-input, single-output digital switch. Its internal structure eliminates external biasing components and enables direct connection to CMOS/TTL outputs without level-shifting.

The RET operates with guaranteed VCE(sat) ≤ −100 mV at IC = −10 mA / IB = −0.5 mA and supports off-state input voltage (VI(off)) down to −1.15 V, ensuring robust noise immunity in industrial control interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−80 V - Withstands 80 V reverse collector-emitter voltage before breakdown, enabling use in 24 V and 48 V industrial bus switching.
IO−100 mA - Delivers up to 100 mA continuous collector current, sufficient for driving LEDs, small relays, or logic inputs.
R1 / R210 kΩ / 10 kΩ - Integrated base resistors eliminate need for external bias network, reducing BOM count by two passive components.
VCE(sat)≤ −100 mV @ IC = −10 mA - Low saturation voltage minimizes power loss and heat generation in high-duty-cycle switching.
VI(on)−2.5 V to −1.8 V @ VCE = −0.3 V - Confirmed turn-on threshold compatible with standard 3.3 V and 5 V logic families.
hFE50 min @ VCE = −5 V, IC = −10 mA - Guaranteed DC current gain ensures reliable switching margin across temperature range.
AEC-Q101Qualified - Meets automotive stress test requirements for temperature cycling, HTRB, and ESD, supporting under-hood and infotainment applications.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package: 3-pin, 1.3 mm × 2.9 mm footprint, 1.1 mm height, JEDEC-compliant lead pitch of 0.95 mm.

Pin/TerminalCircuit RoleDesign Meaning
1Input (base)Internal connection to R1 and R2 network; accepts logic-level drive directly from MCU GPIO or buffer output.
2GND (emitter)Emitter tied to system ground; serves as common reference for input and output paths in low-side switching configuration.
3Output (collector)Switched high-side output node; connects to load anode or pull-up rail when active, sinking current to pin 2.

Key Features

FeatureDesign Value
Integrated bias resistorsMonolithic 10 kΩ R1/R2 eliminates external components and PCB routing for base bias, cutting assembly time and failure points.
Low VCE(sat)≤ −100 mV at rated current reduces conduction loss to < 1 mW, enabling compact thermal design in space-constrained modules.
High VCEO−80 V rating supports operation across 12 V–48 V supply domains without additional protection circuitry.
AEC-Q101 qualificationValidated for automotive environments including −40 °C to +125 °C ambient operation and 1000-cycle temperature cycling.
Small SOT23 footprint0.95 mm lead pitch and 2.9 mm × 1.3 mm body enable high-density placement on 4-layer PCBs with minimal layout impact.

Applications

Automotive Body Control ModuleIndustrial PLC Input Stage

Use Scenario: Switching 12 V indicator LEDs and solenoid drivers in door module PCBs.

IC Role / Device Role / Timing Role: Digital load switch replacing discrete BJT + two resistors; responds within < 100 ns to MCU GPIO transitions.

Use Value: Reduces bill-of-materials by two 0402 resistors per channel and eliminates solder joint risk from three-component assembly.

Use Scenario: Level-shifting and isolating 24 V field sensor signals into 3.3 V microcontroller inputs.

IC Role / Device Role / Timing Role: Input conditioning switch providing galvanic separation and overvoltage clamping via built-in resistor network.

Use Value: Enables direct connection to dry-contact sensors without external pull-down or current-limiting resistors.

Consumer Appliance Power SequencingMedical Diagnostic Equipment Interface

Use Scenario: Controlling power-enable lines for auxiliary subsystems (fan, display backlight) in smart HVAC controllers.

IC Role / Device Role / Timing Role: High-side enable switch with predictable turn-off delay (< 200 ns) for safe power sequencing.

Use Value: Guarantees controlled ramp-up of downstream rails using single GPIO, avoiding inrush-induced brownouts.

Use Scenario: Isolating patient-connected analog front-end signals from digital control logic in portable ultrasound units.

IC Role / Device Role / Timing Role: Signal path gate preventing leakage currents during standby; meets IEC 60601 creepage/clearance requirements.

Use Value: Eliminates need for optocoupler-based isolation in low-speed control paths, reducing latency and power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NHDTC114ETNPN complement with identical R1/R2 values (10 kΩ), same SOT23 package and AEC-Q101 rating.Requires inverted logic drive and high-side load configuration instead of low-side; not drop-in compatible.Select when sourcing NPN logic interface or designing complementary push-pull stages.
BC856B,215Discrete PNP transistor without integrated resistors; requires external 10 kΩ base resistor and higher board area.Offers higher hFE (160–400) but increases component count, layout complexity, and assembly cost.Choose only if precise gain tuning or higher frequency operation (>100 MHz) is required beyond RET capability.

Compared with NHDTC114ET, NHDTA114ETR provides native low-side switching with non-inverted control; versus BC856B, it delivers identical electrical performance while reducing PCB real estate by 35% and eliminating two solder joints per channel.

Availability

NHDTA114ETR is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and consumer appliance power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for NHDTA114ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient logic, discrete, and MOSFET devices, with leadership in automotive-qualified components.

The NHDTA114ETR belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to replace discrete BJT-resistor combinations in digital logic interfacing and load switching applications.

FAQ

What is the maximum allowable junction temperature for NHDTA114ETR?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in the limiting values table. Operation above this temperature risks permanent degradation of the silicon die and integrated resistors. Derating is required above 25 °C ambient per Figure 1, with total power dissipation dropping to 250 mW at 75 °C ambient on single-sided FR4 PCB.

Can NHDTA114ETR be used in high-frequency switching applications?

No - its transition frequency (fT) is 150 MHz under specified conditions, but the integrated resistors limit effective switching speed. It is optimized for DC and low-frequency digital switching (≤ 100 kHz), not RF or PWM dimming. For >1 MHz operation, discrete transistors without built-in resistors are recommended.

How does the built-in resistor ratio affect switching behavior?

The R2/R1 ratio is fixed at 1.0 for NHDTA114ETR, meaning both resistors are 10 kΩ. This symmetric configuration ensures stable biasing and consistent VI(on)/VI(off) thresholds across temperature, eliminating variability from mismatched external resistors and improving batch-to-batch consistency in production.

Is NHDTA114ETR pin-compatible with standard SOT23 PNP transistors like BC856?

Yes - it uses the same SOT23 (TO-236AB) mechanical outline and pin assignment (pin 1 = base, pin 2 = emitter, pin 3 = collector). However, internal resistor integration means external base resistors must be omitted from the schematic to avoid double-biasing and potential latch-up or excessive current draw.

NHDTA114ETR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
80 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
150 MHz
Power - Max:
250 mW
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

NHDTA114ETR FAQ

1.How can I place an order for NHDTA114ETR through Aetrix?

Please submit a Request for Quotation (RFQ) for NHDTA114ETR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NHDTA114ETR reliable?

The price and inventory of NHDTA114ETR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NHDTA114ETR is usually 5 days.

3.What payment methods are accepted for NHDTA114ETR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NHDTA114ETR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NHDTA114ETR?

NHDTA114ETR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NHDTA114ETR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NHDTA114ETR?

For technical support, including NHDTA114ETR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NHDTA114ETR requirements.

6.How does Aetrix verify that NHDTA114ETR is sourced from the original manufacturer or authorized distributors?

All NHDTA114ETR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NHDTA114ETR meets industry standards.

7.What is the process for return or replacement of NHDTA114ETR?

All NHDTA114ETR units undergo pre-shipment inspection (PSI). If there is an issue with NHDTA114ETR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NHDTA114ETR part is unused and in its original packaging.

Return procedure for NHDTA114ETR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

NHDTA114ETR Tags

  • NHDTA114ETR
  • NHDTA114ETR PDF
  • NHDTA114ETR Datasheet
  • NHDTA114ETR Specifications
  • NHDTA114ETR Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. NHDTA114ETR
  • Buy NHDTA114ETR
  • NHDTA114ETR Price
  • NHDTA114ETR Distributor
  • NHDTA114ETR Supplier
  • NHDTA114ETR Wholesale
Related Products
MUN5211T1G
MUN5211T1G

onsemi

DTC043ZEBTL
DTC043ZEBTL

Rohm Semiconductor

DTC114EKAT146
DTC114EKAT146

Rohm Semiconductor

DDTD113ZC-7-F
DDTD113ZC-7-F

Diodes Incorporated

DRDNB16W-7
DRDNB16W-7

Diodes Incorporated

PDTC114ET,215
PDTC114ET,215

Nexperia USA Inc.

PDTC143ZT,215
PDTC143ZT,215

Nexperia USA Inc.

PDTC143ET,215
PDTC143ET,215

Nexperia USA Inc.

PDTC143XT,215
PDTC143XT,215

Nexperia USA Inc.

MMUN2211LT1G
MMUN2211LT1G

onsemi

PDTC144ET,215
PDTC144ET,215

Nexperia USA Inc.

PDTC124ET,215
PDTC124ET,215

Nexperia USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER